Control of band offsets qt high-index semi conductor interfaces by the Piezo-effect induced with thin strained insertion layrs

通过薄应变插入层引起的压电效应控制高折射率半导体界面的能带偏移

• 批准号: 08650029
• 负责人: SAITO Toshio
• 金额: $ 1.34万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650029/
• 关键词: Gallium Arsenide; Indium Arsenide; Aluminium Arsenide; Ultra Thin Film; Piezo-Effect; Semiconductor Interface; Band Offset; Tight-Binding Method; カリウム砒素

We have theoretically studied the electronic structure of an InAs monolayr on a (311) GaAs substrate by using the semi-empirical sp^3s^<**> tight-binding method. (InAs)_1/(GaAs)_n[311] superlattices with n=10-26 are used for calculations. The (311)-InAs monolayr induces an electron level (near the conduction-band edge) and a hole level (near the valence-band edge) in the GaAs band-gap. The electron-hole energy separation is smaller than the GaAs band-gap energy by 0.06eV (n=10) and 0.03eV (n=26), which accounts for the observed photoluminescence peak [M.I.Alonso et al. : Phys. Rev. B50,1628 (1994)]. The charge densities of the electorn state and the hole state are weakly lacalized near the (311)-InAs monolayr. Next, we have studied the strain energy distribution and electronic structure of InAs pyramidal quantum dots (QDs) with uncovered surfaces. Using the sp^3s^<**> tight-binding method, we calculate the densities of states for the inside states and the surface states. The density of the inside states shows a large energy gap ; 2.71-1.74eV for 161-1222-atom QDs. At the same time, we find the surface states in the gap.

用半经验sp^3s^<**>紧束缚方法研究了（311）GaAs衬底上InAs单层膜的电子结构.用n=10-26的（InAs）_1/（GaAs）_n[311]超晶格进行了计算。（311）-InAs单层在GaAs带隙中诱导出一个电子能级（靠近导带边）和一个空穴能级（靠近价带边）。电子-空穴能量分离比GaAs带隙能量小0.06eV（n=10）和0.03eV（n=26），这解释了观察到的光致发光峰[M. I. Alonso et al.：Phys.Rev.B50，1628（1994）]。电子态和空穴态的电荷密度在（311）-InAs单层附近有弱的局域化。接下来，我们研究了表面未覆盖的InAs金字塔量子点的应变能分布和电子结构。用sp^3s^<**>紧束缚方法计算了内部态和表面态的态密度。内部态密度显示出较大的能隙，对于161-1222个原子的量子点，能隙为2.71-1.74eV。同时，我们还发现了差距中的表面态。

项目成果

T.Saito and T.Ikoma: ""Effects of ZnSe and P Insertion Layrs on Band Offsets at (100) GaAs/AlAs Interfaces"" Applied Surface Science. 107. 222 (1996)

T.Saito 和 T.Ikoma：“ZnSe 和 P 插入层对 (100) GaAs/AlAs 界面能带偏移的影响”应用表面科学。

T.Saito: "Effects of znse and P insertion layers on band offsets at (100)GaAs/AlAs interfaces" Applied Surface Science. Vol.107. 222-226 (1996)

T.Saito：“Znse 和 P 插入层对 (100)GaAs/AlAs 界面能带偏移的影响”应用表面科学。

T.Saito: "Atomic scale calculations for strain distribution and electronic structure of InAs pyramidal quantum dots on(100) GaAs" Proc.of 24th Int,Symp,on Compound semiconductors. (発表予定). (1998)

T.Saito：“(100) GaAs 上 InAs 金字塔量子点的原子尺度计算”Proc.of 24th Int,Symp，关于化合物半导体（即将发表）。

T.Saito: ""Electronic structure of (311)-InAs monolayrs embedded in GaAs"" Superlattices and Microstructures.(in press).

T.Saito：“嵌入 GaAs 中的 (311)-InAs 单层的电子结构”超晶格和微结构。（出版中）。

T.Saito: "Strain distribution and electronic,structure of InAs quantum dots on GaAs:Atomic scale calculations" Physics of Low-Dimensional Structures. Vol.11/12. 19-26 (1997)

T.Saito：“GaAs 上 InAs 量子点的应变分布和电子结构：原子尺度计算”低维结构物理学。