Film growth of high quality microcrystalline germanium by ECR plasma CVD
Film growth of high quality microcrystalline germanium by ECR plasma CVD
批准号:
05650314
负责人:
AOKI Takeshi
金额:
$1.09万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
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英文摘要
We have deposited high quality hydrogenated Ge films using the ECR plasma of hydrogen diluted germane generated by microwaves of a very narrow frequency spectrum in order to well control electrons and ions impinging to growing surfaces at the background pressure of the order of 10^<-8> Torr. The films deposited on insulating substrates showed amorphous-microcrystalline phase transition around at the microwave power of 9-12 W,where Hall voltage of the films changed sign due to Hall effect anomaly in amorphous semiconductor. An optoelectronic parameter etamutau gave a maximum at the phase transition similarly as previously observed in the Ge films deposited on conductive substrates. To investigate surface field effect mobility mu_<FE> in contrast with Hall mobility mu_H, we have fabricated bottom-gate type TFT with depositing Ge films as as active layrs, but gate-leak current was observed in particular on muc-Ge : H TFT.This gate breakdown was found not to be due to charging up of electr … More ons and ions on SiO_2 but due to microwave irradiation, and prevented by shielding the samples from the microwaves during deposition. The surface mobility mu_<FE> was correlated with etamutau in a-Ge : H TFT but not in muc-G : H TFT.Etching Ge on SiO_2 revealed that the Ge-SiO_2 interface was significantly roughened by muc-Ge : H deposition in comparison with a-Ge : H.Moreover, we found mu_<FE> to be correlated with surface roughness of Ge-SiO_2 interface in muc-Ge : H TFT, which suggest that the surface roughness is an important factor in mu_<FE> of muc-Ge : H TFT.Though it was revealed by plasma diagnostic that electron temperature and ion irradiation are key factors to obtain high mu_<FE> and etamutau in a-Ge : H TFT,we could not realize the deposition condition to have such high values of mu_<FE> as mu_H<similar or equal>0.3cm^2/Vs in a-Ge : H and mu_H<similar or equal>2cm^2/Vs in muc-Ge : H in the present work. Thus this has been left to the subject for a future study. We also found the existence of two type light degradation effects in a-Ge : H films ; one is the same as that usually observed in intrinsic a-Si : H and the other gives completely opposite feature of photo- and dark current, during and after irradiation, respectively. The former film has slightly better optoelectronic sensitivity and smaller localized gap-states density. However detailed study including the difference of deposition condition for the two type films should be further continued. Less
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盛 偉秋: "低エネルギー及び低光電流における半導体薄膜のCPM特性測定装置" 東京工芸大学紀要. 16,No.1. 120-129 (1993)
魏秋胜:“低能量、低光电流下半导体薄膜CPM特性的测量装置”,东京工业大学学报,第16期,第1. 120-129期(1993)。
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通讯作者:
Takeshi AOKI,Kazuo FUKASAWA,Yasuo NISHIKAWA,and Nobuo Mikoshiba: "A Novel Impedance-Matching Method for Plasma Processing" Jpn. J.Appl. Phys.(Submitted to).
Takeshi AOKI、Kazuo FUKASAWA、Yasuo NISHIKAWA 和 Nobuo Mikoshiba:“一种用于等离子体处理的新型阻抗匹配方法”Jpn。
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Takeshi AOKI: "Electron-Flux Induced Growth of Microcrystalline Germanium by ECR Plasma" Jr.Non-Cryst.Solids. Vol.164-166. 91-94 (1993)
Takeshi AOKI:“通过 ECR 等离子体的电子通量诱导微晶锗生长”Jr.Non-Cryst.Solids。
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通讯作者:
Takeshi AOKI,Yasui NISHIKAWA,Kazuo FUKASAWA,W.Q.Sheng, and Masataka HIROSE: "Electron-Flux Induced Growth of Microcrystalline Germanium by ECR Plasma" Jr. Non-Cryst. Solids. Vol.164-166. 91-94 (1993)
Takeshi AOKI、Yasui NISHIKAWA、Kazuo FUKASAWA、W.Q.Sheng 和 Masataka HIROSE:“通过 ECR 等离子体的电子通量诱导微晶锗生长”Jr. 非晶体。
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作者:
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通讯作者:
Takeshi AOKI: "A Novel Impedance-Matching Method for Plasma Processing" Jpn.J.Appl.Phys.(投稿中).
Takeshi AOKI:“一种用于等离子体处理的新颖阻抗匹配方法”Jpn.J.Appl.Phys.(进行中)。
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