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Fabrication of Micro/Millimeter Wave Integrated Circuit by Novel Ferrite Plating Enhanced by Laser

激光增强新型铁氧体电镀制造微/毫米波集成电路

基本信息

批准号：
05555086
负责人：
ABE Masanori
金额：
$ 14.34万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555086/
关键词：
Microwave Millimeter wave Ferrite film Ferrite plating MnZn ferrite NiZn ferrite Dielectric loss フェライトメッキ誘電率透磁率

项目摘要

The purpose of this study was to fabricate micro/millimeter wave devices in which ferrite-film nonreciprocal circuits (i.e.isolators and circulators) prepared by the novel laser-enhanced ferrite plating are integrated. The ferrite plating is low in process temperature (<100 C), and, when enhanced by laser beams, high in deposition rate and capable of selective area deposition by scanning. The plated films of NiZn and MnZn spinel ferrites were found to be highly lossy at microwave freguency. This was because concentration of Ni and Mn was low which gave rise Fe^<2+> ions in the spinel lattice. Therefore, we have developed a novel ferrite plating method utilizing highly alkaline aqueous solution of chelated Fe and other metal ions, by which the Ni and Mn concentration were successfully increased. Furthermore, we have fabricated films of hexagonal Ba-ferrite by novel electro-ferrite plating utilizing alternate electric current. The dielectric loss in the plated films of NiZn and MnZn ferrites were successfully reduced by exposing the films in vacuum at room temperature, without deteriorating their magnetic characteristics. We could not, unfortunately, realize the microwave/millimeter-wave devices integrated with the non-reciprocal ferrite devices, however, we have shown the potential feasibility to fabricate them.

本研究的目的是制作集成了新型激光增强铁氧体镀膜的铁氧体薄膜非互易电路(即隔离器和环行器)的微/毫米波器件。铁氧体电镀的工艺温度低(&lt；100℃)，当激光增强时，沉积速度快，并能够通过扫描选择区域沉积。在微波频率下，镍锌尖晶石铁氧体和锰锌尖晶石铁氧体镀膜具有很高的损耗。这是因为镍和锰的浓度较低，使得尖晶石晶格中的Fe~(2+)~(2+)和Gt~(2+)离子增多。因此，我们开发了一种新的利用螯合铁和其他金属离子的高碱性水溶液电镀铁氧体的方法，成功地提高了镍和锰的含量。此外，我们还利用交流电镀的方法制备了六方结构的铁氧体薄膜。采用真空常温曝光的方法，在不降低薄膜磁性能的前提下，成功地降低了镍锌铁氧体和锰锌铁氧体电镀膜的介电损耗。遗憾的是，我们无法实现与非互易铁氧体器件集成的微波/毫米波器件，但我们已经展示了制作它们的潜在可行性。