Estimation of Final Shape and Accuracy of the Electron Beam Drawing Process

电子束拉伸过程的最终形状和精度的估计

• 批准号: 07455067
• 负责人: FURUKAWA Yuji
• 金额: $ 4.61万
• 依托单位: TOKYO METROPOLITAN UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455067/
• 关键词: Electron Beam Drawing; Micro-machining; 電子線描画; 異方性エッチング; 仕上がり形状

The electron beam direct writing lithography has become one of the most promising technologies for reliably fabricating fine mask patterns in the order of submicron which may be beyond the practical resolution limit of optical lithography. This study aims to estimate and evaluate geometrical shape and accuracy of the mask patterns onthe electron beam drawing process.Firstly, the effects of the drawing conditions as acceleration voltage, beam current, and scanning rate were investigated and the accuracy of the mask patterns was evaluated by a differential interference microscope, a scanning electron microscope (SEM) and so on. It is made clear through the experiments and the numerical simulation that the shape and the accuracy of the mask patterns are influenced by the diameter of the electron beam which depends especially on the acceleration voltage.Secondly, anisotropic etching which is relatively easy process to fabricate the micro-mechanical parts was used in order to clarify the effect of the accuracy of the mask patterns on the surface integrity of the etched single crystal silicon. It is found from the experimental results that the miss-alignment of the mask pattern should be less than 0.7 degree. Also, a formula that compensates the side etching was proposed and the accurate machining became possible.

电子束直写光刻已成为可靠地制造亚微米级精细掩模图案的最有前途的技术之一，亚微米级精细掩模图案可能超出光学光刻的实际分辨率极限。本研究旨在估计和评估掩模图案的几何形状和精度对电子束绘制过程的影响。首先，研究了加速电压、束流电流和扫描速率等绘制条件的影响，并利用微分干涉显微镜、扫描电子显微镜（SEM）等评估了掩模图案的精度。通过实验和数值模拟表明，掩模图案的形状和精度受电子束直径的影响，而电子束直径尤其取决于加速电压。其次，采用各向异性蚀刻这种相对容易制造微机械零件的工艺，以阐明掩模图案的精度对蚀刻单晶表面完整性的影响。 硅。实验结果发现掩模图形的错位应小于0.7度。此外，还提出了补偿侧蚀的公式，使精确加工成为可能。

项目成果

古川勇二他: "高能率,高精度異方性エッチング条件の選定指針" 精密工学会誌. 62・3. 428-432 (1996)

Yuji Furukawa 等：“高效率、高精度各向异性蚀刻条件选择指南”日本精密工程学会杂志 62・3（1996 年）。

古川 勇二 他: "高能率,高精度異方性エッチングの選定指針" 精密工学会誌. 62・3. 428-432 (1996)

Yuji Furukawa 等：“高效、高精度各向异性蚀刻的选择指南”日本精密工程学会杂志 62・3（1996 年）。

Yuji Furukawa et al.: "Guideline for Efficient and Priise Anisotropic Etching Condisions" Journal of the JSPE. Vol. 62, No. 2. 428-432 (1996)

Yuji Furukawa 等人：“高效且优质各向异性蚀刻条件指南”，JSPE 杂志。

Nobuyuki Moronuki et al.: "Fabrication of a Linear Motion Microsystem on a Si wafer" International Journal of the JSPE. Vol. 30, No. 2. 168-169 (1996)

Nobuyuki Moronuki 等人：“硅晶圆上线性运动微系统的制造”JSPE 国际期刊。

諸貫 信行 他: "Fabrication of a Linear Motion Microsystem on a Si Wafer" International Journal of the JSPE. 30・2. 168-169 (1996)

Nobuyuki Moronuki 等人：“Si 晶圆上线性运动微系统的制造”，JSPE 国际期刊 30・2（1996 年）。