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Effect of Single Crystal Nano-Structured Thin Layer on Nano-Surface Integrity

单晶纳米结构薄层对纳米表面完整性的影响

基本信息

批准号：
16206015
负责人：
FURUKAWA Yuji
金额：
$ 30.04万
依托单位：
Tokyo University of Agriculture and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16206015/
关键词：
Silicon Carbonate (SiC)thin layer surface integrity nano structure epitaxy MEMS indentation YAG laser サーフェスインテグリティー Sic

项目摘要

Systematization of formation methods of SiC thin layer and SiC nano-structured layerAs a molecule supplying method of Molecular Beam Epitaxy, three kinds for Silicon(Si), namely, Electron Beam gun, Knoodsen Cell and Helicon sputtering, and two kinds for Carbon(C), namely, Acetylene gas and Electron Beam sputtering have been developed respectively. Any two combination of Si and C could generate crystal growth of Silicon Carbonate(SiC), among which the better single crystal SiC could be obtained when supplying C by Acetylene gas and sputtering Si, and firstly, a carbonated layer is prepared on Silicon single crystal substrate under about 900 ℃in order to adjust lattice difference between Si and SiC, then accumulate SiC gradually.Chemical composition of SiC layer and SiC nano-structured surfaceIt was clarified by analysis of XPS that the eitaxially grown SiC layer consists of about 50% Si and 50% C, and its basic electric characteristics were verified.Method to generate micro structure on … More single crystal SiCMicro grooves in a size of several nm width and several ten nm depth could be formed by applying YAG laser machining systems.Nano surface integrity of single crystal Silicon layer and nano structured layerNano order hardness and adhesive characteristic of the generated SiC layers have been tested by applying Atomic Force Microscope and it was evaluated that these characteristics relate either of tested depth and surface integrity, and these results could be fundamentals of a theoretical analysis. In addition, an effect of nano structure and chemical composition on surface integrity was experimentally clarified and systematized comparing nano structure with its chemical composition of specimen.Preparation of data file to select an optimal machining conditionMany parameters and data concerned with Si substrate, epitaxy growth conditions of SiC mono-layer, laser machining, and surface nano integrity, etc. have been arranged and systematized so as to correspond to the purpose of application of SiC mono layer and SiC nano structured surface to MEMS/NEMS surfaces. Less

碳化硅薄膜和碳化硅纳米结构层形成方法的系统化作为分子束外延的一种分子供应方法，分别发展了三种硅源(Si)和两种碳源(C)，即电子束溅射、克诺森室和螺旋溅射，以及乙炔气体和电子束溅射。碳化硅和碳化硅的任意两种结合都能促进碳化硅的生长，其中用乙炔气体供碳和溅射碳化硅可以得到较好的单晶碳化硅，首先在硅单晶衬底上形成碳化层，以调节碳化硅和碳化硅之间的晶格差，然后逐渐积累碳化硅。通过X射线光电子能谱分析，确定了碳化硅层和碳化硅纳米结构表面的化学成分。通过X射线光电子能谱分析，证实了纵向生长的碳化硅层由大约50%的硅和50%的碳组成，并验证了它的基本电学特性。在…上生成微结构的方法单晶硅层和纳米结构层的纳米表面完整性利用原子力显微镜对生成的碳化硅薄膜的纳米级硬度和结合性能进行了测试，评价了这些性能与测试深度和表面完整性之间的关系，为理论分析奠定了基础。此外，还通过实验阐明了纳米结构和化学成分对表面完整性的影响，并将纳米结构与其样品的化学成分进行了比较。编制了选择最佳加工条件的数据文件。整理和系统化了与硅衬底、碳化硅单层外延生长条件、激光加工和表面纳米完整性等有关的许多参数和数据，以符合将碳化硅单层和碳化硅纳米结构表面应用于MEMS/NEMS表面的目的。较少