Effect of Single Crystal Nano-Structured Thin Layer on Nano-Surface Integrity

SiC薄层和SiC纳米结构层形成方法的系统化：分子束外延提供分子的方法，针对硅（Si）分别开发了电子束枪、Knoodsen Cell和Helicon溅射三种方法，针对碳(C)分别开发了乙炔气体和电子束溅射两种方法。Si和C的任意两种组合都可以产生碳化硅（SiC）的晶体生长，其中乙炔气供C和溅射Si可以获得较好的单晶SiC，首先在硅单晶衬底上在900℃左右的温度下制备碳化层，以调节Si和SiC之间的晶格差，然后逐渐积累SiC。XPS分析表明，纵向生长的SiC层由50%的Si和50%的C组成，并对其基本电特性进行了验证。采用YAG激光加工系统，可以形成更多的单晶SiCMicro沟槽，这些沟槽宽度为几nm，深度为几十nm。应用原子力显微镜对制备的SiC层的纳米有序硬度和粘接特性进行了测试，并评价了这些特性与测试深度和表面完整性之间的关系，这些结果可以作为理论分析的基础。此外，通过实验系统地阐明了纳米结构和纳米化学组成对表面完整性的影响，并将纳米结构与样品的化学组成进行了比较。为适应将SiC单层和SiC纳米结构表面应用于MEMS/NEMS表面的目的，对Si衬底、SiC单层外延生长条件、激光加工、表面纳米完整性等诸多参数和数据进行了整理和系统化。少

Systematization of formation methods of SiC thin layer and SiC nano-structured layerAs a molecule supplying method of Molecular Beam Epitaxy, three kinds for Silicon(Si), namely, Electron Beam gun, Knoodsen Cell and Helicon sputtering, and two kinds for Carbon(C), namely, Acetylene gas and Electron Beam sputtering have been developed respectively. Any two combination of Si and C could generate crystal growth of Silicon Carbonate(SiC), among which the better single crystal SiC could be obtained when supplying C by Acetylene gas and sputtering Si, and firstly, a carbonated layer is prepared on Silicon single crystal substrate under about 900 ℃in order to adjust lattice difference between Si and SiC, then accumulate SiC gradually.Chemical composition of SiC layer and SiC nano-structured surfaceIt was clarified by analysis of XPS that the eitaxially grown SiC layer consists of about 50% Si and 50% C, and its basic electric characteristics were verified.Method to generate micro structure on … More single crystal SiCMicro grooves in a size of several nm width and several ten nm depth could be formed by applying YAG laser machining systems.Nano surface integrity of single crystal Silicon layer and nano structured layerNano order hardness and adhesive characteristic of the generated SiC layers have been tested by applying Atomic Force Microscope and it was evaluated that these characteristics relate either of tested depth and surface integrity, and these results could be fundamentals of a theoretical analysis. In addition, an effect of nano structure and chemical composition on surface integrity was experimentally clarified and systematized comparing nano structure with its chemical composition of specimen.Preparation of data file to select an optimal machining conditionMany parameters and data concerned with Si substrate, epitaxy growth conditions of SiC mono-layer, laser machining, and surface nano integrity, etc. have been arranged and systematized so as to correspond to the purpose of application of SiC mono layer and SiC nano structured surface to MEMS/NEMS surfaces. Less