Study on mechanism of generating an ultra flat surface by MBE
Study on mechanism of generating an ultra flat surface by MBE
批准号:
09450062
负责人:
FURUKAWA Yuji
金额:
$8.19万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
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英文摘要
Epitaxial growth is molecular deposition along crystalline orientation of substrate. Si-Si Molecular Beam Epitaxy (MBE), one of the epitaxial growth methods, is physical thermal process. That is, Si molecules given thermal energy from heated substrate can migrate on the substrate, reach to the lower potential energy positions and be caught there. So it is expected that the potential energy of the generated surface becomes more even, hence the newly surface becomes geometrically flat and crystallographically aligned. The present study made the relation clear between the substrate orientation, the surface migration and the property of the generated surface.In the experiment, pure Si was homo-epitaxially grown up onto the same substrate temperature (800゚C), the number of supplied molecules and the grown time. The orientation of the Si substrate was only varied (001), (113), (111), (331) and (110), which belong to <110> crystal zone.The generated surface, which was observed by the help of … More Atomic Force Microscope (AFM) in suitable environment, was different to the substrate orientation. Each generated shape consisted of the specific crystal planes in which the density of dangling bonds was lower into the substrate. It was thought that these planes were slower deposition rate than the others because the planes were difficult to transfer the thermal energy of molecules. Then, the generated surface on (111) was the smoothest one. On the other hand, the generated surface on (331) was the roughest one.These results were clarified that the dangling bonds take the thermal energy of molecules away and the amount of this lost energy depended on the density of dangling bond. Thus, if the density of dangling bonds on the substrate orientation is the lowest, the density of the dangling bonds in the lower potential energy positions is relatively higher than another positions on the substrate and easy to lose the thermal energy of molecules. Therefore, the generated surface on this substrate could be flattened. Less
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古川 勇二 他: "分子線エピタキシによる超精密加工(第6報)" 精密工学会秋季学術講演会論文集. 329 (1997)
Yuji Furukawa等人:“使用分子束外延的超精密加工(第6次报告)”日本精密工程学会秋季学术会议论文集329(1997)。
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Yuji FURUKAWA, Nobuyuki MORONUKI, Akira KAKUTA and Goichiro MORI: "Generating of Monocrysal Smooth Surface of SiC by using Helicon Supttering Molecular Source MBE (1st report)" Preprint of the Japan society for Precision Engineering (In Japanese). 227 (19
Yuji FURUKAWA、Nobuyuki MORONUKI、Akira KAKUTA 和 Goichiro MORI:“使用螺旋溅射分子源 MBE 生成 SiC 单晶光滑表面(第 1 次报告)”日本精密工程学会预印本(日语)。
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Nobuyuki MORONOKI, Arata KANEKO, Akira KAKUTA and Yuji FURUKAWA: "surface Smoothing Property of Silicon Molecular Beam Expitaxy on (100) Substrate" Proc.Of Internatinal Sessions, 75th JSME Spring Annual Meeting. Vol.V. 1-4 (1998)
Nobuyuki MORONOKI、Arata KANEKO、Akira KAKUTA 和 Yuji FURUKAWA:“(100) 基板上硅分子束外延的表面平滑特性”Proc.Of International Sessions,第 75 届 JSME 春季年会。
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Yuji FURUKAWA, Nobuyuki MORONUKI, Akira KAKUTA Hiroshi MIYAKOSHI: "Generating of SiC Extra-smooth Surface using MBE (3rd report)" Preprint of the Japan society for Precision Engineering (In Japanese). 434 (1999)
Yuji FURUKAWA、Nobuyuki MORONUKI、Akira KAKUTA Hiroshi MIYAKOSHI:“使用 MBE 生成 SiC 超光滑表面(第 3 次报告)”日本精密工程学会预印本(日语)。
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古川勇二 他: "分子線エピタキシによるSiC平滑面の創成(第3報)" 精密工学会春季学術講演会講演論文集. (印刷中). (1999)
Yuji Furukawa 等人:“通过分子束外延技术创建光滑的 SiC 表面(第 3 次报告)”日本精密工程学会春季学术会议论文集(正在出版)(1999 年)。
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共 14 条
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STABILIZATION ON PROCESS OF EXIMER LASER BY IN SITU MEASUREMENT OF ENERGY
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Inhibitory action of oxidized lipoproteins on the activity of plasma lecithin-cholesterol acyltransferase and the effects of the atherosclerosis lesions.
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Estimation of Final Shape and Accuracy of the Electron Beam Drawing Process
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An Analysis of Anisotropic Etching Process and Prediction of Finished Profile
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Application of New Materials to Designing of "Nano-mechanism"
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