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Development of cubic Boron Nitride (cBN) Thin Film Formation Process by Pulsed Laser Ablation

脉冲激光烧蚀立方氮化硼 (cBN) 薄膜形成工艺的开发

基本信息

批准号：
07555104
负责人：
SUDA Yoshiaki
金额：
$ 2.3万
依托单位：
SASEBO NATIONAL COLLEGE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555104/
关键词：
Cubic boron nitride Pulsed laser ablation Hexagonal boron nitride FT-IR Nd : YAG laser RF bias KrF excimer Laser Emission spectrum パルスレーザデポジション Nd : YAGレーザ負バイアス FT-IR分析発光分光分析イオンアシストイオン源パルスレーザアブレーション法 RF負バイアス電圧

项目摘要

A method of synthesizing cubic boron nitride (cBN) films using pulsed Nd : YAG (532nm) and KrF (248nm) laser ablation is investigated. BN films are deposited on silicon (100) substrates. The laser beam is focused on the hexagonal BN targets. The composition of the BN film depends on the nitrogen gas pressure. The stoichiometric BN films are obtained under the conditions ; a laser fluence of 3.8 J/cm^2 and the substrate temperature of 650ﾟC and the nitrogen gas pressure of 10.0Pa. Argon gas is mixed with the reactant nitrogen gas and an RF power is applied to the substrate in order to generate a negative DC self-bias and enhance the synthesis of cBN phase for the first time. FT-IR absorption spectroscopy shows that the argon ion bombardment by RF bias plays an important role in the formation of cBN films. Measurements of the optical emission spectrum are performed to estimate the processing plasma state. Auger Electron Spectroscopy shows that the N/B composition ratio depends on the mixture ratio of nitrogen and the reactive emission intensity of B^+ (345.1nm). The surface morphology of the films prepared by the 532 nm laser is rough with lager particulates, whereas much smoother surfaces with fewer and smaller particulates, are obtained with the 248 nm laser. We also prepared tungsten carbide (WC) and carbon nitride (CN) films by pulsed laser ablation method.

研究了一种利用脉冲 Nd : YAG (532 nm) 和 KrF (248 nm) 激光烧蚀合成立方氮化硼 (cBN) 薄膜的方法。 BN 薄膜沉积在硅 (100) 基板上。激光束聚焦在六边形 BN 靶上。 BN 膜的成分取决于氮气压力。在此条件下获得了化学计量的BN薄膜；激光能量密度为3.8 J/cm^2，基板温度为650℃，氮气压力为10.0Pa。将氩气与反应物氮气混合，并向基底施加射频功率，以产生负直流自偏压并首次增强 cBN 相的合成。 FT-IR吸收光谱表明，射频偏压下的氩离子轰击在cBN薄膜的形成中起着重要作用。进行光发射光谱的测量来估计处理等离子体状态。俄歇电子能谱表明N/B组成比取决于氮的混合比和B^+的反应发射强度(345.1nm)。 532 nm 激光制备的薄膜表面形貌粗糙，颗粒较大，而 248 nm 激光制备的薄膜表面更光滑，颗粒更少且更小。我们还通过脉冲激光烧蚀方法制备了碳化钨（WC）和氮化碳（CN）薄膜。