Fabrication of organic electro-luminescence thin films using low temperature electron ablation method

采用脉冲激光沉积（PLD）方法制备了Alq 3有机电致发光薄膜。为了稳定Alq 3靶的密度，我们用液氮冷却靶。将Alq 3靶固定在由铜制成的靶保持器上，然后将液氮放入靶保持器中。用液氮冷却靶的温度为77 K。在这项研究中，我们已经制备了Alq 3薄膜的Nd：YAG激光（532 nm）沉积方法与冷却靶由液氮。实验结果表明，Alq 3薄膜沉积在0.5 J/cm 2以上的能量密度。所制备的薄膜的FT-IR光谱与Alq 3粉末的FT-IR光谱相同。UV-Vis光谱表明，所制备的薄膜在400 nm附近有一个明显的吸收峰，是Alq 3的吸收峰。结果表明，冷却靶制备的薄膜的结构和光学性质与Alq 3有机电致发光材料一致。

We have prepared Alq3 thin films for organic electroluminescence by a pulsed laser deposition (PLD) method. In order to stabilize the density of the Alq3 target, we cooled the target by liquid nitrogen. The Alq3 target was fixed to the target holder made by copper and then liquid nitrogen was put into the target holder. The temperature of target cooled by liquid nitrogen was 77K. In this study, we have prepared Alq3 thin films by a Nd:YAG laser (532 nm) deposition method with the cooling target by liquid nitrogen. The experimental results suggest that Alq3 thin films are deposited at the fluence above 0.5 J/cm2. FT-IR spectra of the prepared films are as same as those of the Alq3 powder. UV-Vis spectrum shows that the prepared films have an absorption peak around 400 nm, which is distinct absorption peak of Alq3. The results suggest that structural and optical properties of the films prepared by cooling target are in agreement with Alq3 for organic electroluminescence.