Fabrication of organic electro-luminescence thin films using low temperature electron ablation method

低温电子烧蚀法制备有机电致发光薄膜

• 批准号: 22540510
• 负责人: SUDA Yoshiaki
• 金额: $ 2.75万
• 依托单位: Sasebo National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22540510/
• 关键词: パルスレーザ堆積; 有機EL; 極低温プロセス; 粉体ターゲット; 冷却ターゲット; 機能性薄膜; プラズマプロセス; 電気電子材料; FTIRスペクトル; 透明導電薄膜

We have prepared Alq3 thin films for organic electroluminescence by a pulsed laser deposition (PLD) method. In order to stabilize the density of the Alq3 target, we cooled the target by liquid nitrogen. The Alq3 target was fixed to the target holder made by copper and then liquid nitrogen was put into the target holder. The temperature of target cooled by liquid nitrogen was 77K. In this study, we have prepared Alq3 thin films by a Nd:YAG laser (532 nm) deposition method with the cooling target by liquid nitrogen. The experimental results suggest that Alq3 thin films are deposited at the fluence above 0.5 J/cm2. FT-IR spectra of the prepared films are as same as those of the Alq3 powder. UV-Vis spectrum shows that the prepared films have an absorption peak around 400 nm, which is distinct absorption peak of Alq3. The results suggest that structural and optical properties of the films prepared by cooling target are in agreement with Alq3 for organic electroluminescence.

我们采用脉冲激光沉积（PLD）方法制备了用于有机电致发光的Alq 3薄膜。为了稳定Alq 3靶的密度，我们用液氮冷却靶。将Alq 3靶固定在由铜制成的靶保持器上，然后将液氮放入靶保持器中。用液氮冷却靶的温度为77 K。在这项研究中，我们已经制备了Alq 3薄膜的Nd：YAG激光（532 nm）沉积方法与冷却靶由液氮。实验结果表明，Alq 3薄膜沉积在0.5 J/cm 2以上的能量密度。所制备的薄膜的FT-IR光谱与Alq 3粉末的FT-IR光谱相同。UV-Vis光谱表明，所制备的薄膜在400 nm附近有一个明显的吸收峰，是Alq 3的吸收峰。结果表明，冷却靶制备的薄膜的结构和光学性质与Alq 3有机电致发光材料一致。

项目成果

Optical study on the mechanisms of gliding arc discharge

滑动电弧放电机理的光学研究

• 发表时间: 2011
• 作者: K. Shimizu;Q. Chang;K. Nakamura;M. E. Zolensky et al;Hiroharu Kawasaki
• 通讯作者: Hiroharu Kawasaki

Preparation of a titanium thin film using a sputtering deposition process with a powder material target

• DOI: 10.14723/tmrsj.37.147
• 发表时间: 2012-06
• 期刊: Transactions-Materials Research Society of Japan
• 作者: Hiroharu Kawasaki;T. Ohshima;K. Arafune;Y. Yagyu;Y. Suda

PLD法によるAlドープZnO薄膜の作製

PLD法制备Al掺杂ZnO薄膜

• 发表时间: 2010
• 作者: A. Sakamoto;T. Harada;Y. Takahashi;and N. Tanaka;大島多美子
• 通讯作者: 大島多美子

プラズマプロセスによる有機EL薄膜の作製に関する研究

等离子体工艺生产有机EL薄膜的研究

• 发表时间: 2010
• 作者: 石塚竜二;坂本章;平山司, 渡邉昇, 鈴木大介, 高橋正彦;川島明慎
• 通讯作者: 川島明慎

Titanium Oxide Thin Film Preparation by Pulsed Laser Deposition Method Using a Powder Target

使用粉末靶材的脉冲激光沉积法制备氧化钛薄膜

• 作者: Junichi Ono;Kim Hyeon-Deuk;and Koji Ando;長友英夫，城崎知至，砂原淳，西口彰夫，三間圀興;Hiroharu KAWASAKI
• 通讯作者: Hiroharu KAWASAKI