Fabrication of organic electro-luminescence thin films using low temperature electron ablation method

采用脉冲激光沉积(PLD)方法制备了Alq3有机电致发光薄膜。为了稳定Alq3靶的密度，我们用液氮对靶进行了冷却。将Alq3靶固定在铜制靶架上，然后向靶架内注入液氮。液氮冷却靶材的温度为77K。在本研究中，我们以液氮为冷却靶材，采用532 nm激光沉积法制备了Alq3薄膜。实验结果表明，当注量大于0.5J/cm2时，可以制备出Alq3薄膜。制备的薄膜的红外光谱与Alq3粉末的红外光谱相同。UV-Vis光谱表明，制备的薄膜在400 nm附近有一个吸收峰，这是Alq3的明显吸收峰。结果表明，冷却靶法制备的薄膜的结构和光学性质与Alq3的有机电致发光特性一致。

We have prepared Alq3 thin films for organic electroluminescence by a pulsed laser deposition (PLD) method. In order to stabilize the density of the Alq3 target, we cooled the target by liquid nitrogen. The Alq3 target was fixed to the target holder made by copper and then liquid nitrogen was put into the target holder. The temperature of target cooled by liquid nitrogen was 77K. In this study, we have prepared Alq3 thin films by a Nd:YAG laser (532 nm) deposition method with the cooling target by liquid nitrogen. The experimental results suggest that Alq3 thin films are deposited at the fluence above 0.5 J/cm2. FT-IR spectra of the prepared films are as same as those of the Alq3 powder. UV-Vis spectrum shows that the prepared films have an absorption peak around 400 nm, which is distinct absorption peak of Alq3. The results suggest that structural and optical properties of the films prepared by cooling target are in agreement with Alq3 for organic electroluminescence.