Fabrication of organic electro-luminescence thin films using low temperature electron ablation method

采用脉冲激光沉积（PLD）法制备了用于有机电致发光的Alq3薄膜。为了稳定Alq3靶材的密度，我们用液氮对靶材进行冷却。将Alq3靶固定在铜制靶架上，然后将液氮放入靶架中。液氮冷却后的目标温度为77K。在本研究中，我们采用Nd:YAG激光（532 nm）沉积法，以液氮冷却靶制备了Alq3薄膜。实验结果表明，Alq3薄膜在0.5 J/cm2以上的通量下沉积。制备的薄膜的FT-IR光谱与Alq3粉末的相同。紫外可见光谱表明，制备的薄膜在400 nm左右有一个吸收峰，为Alq3的明显吸收峰。结果表明，用冷却靶制备的薄膜的结构和光学性质与Alq3有机电致发光薄膜一致。

We have prepared Alq3 thin films for organic electroluminescence by a pulsed laser deposition (PLD) method. In order to stabilize the density of the Alq3 target, we cooled the target by liquid nitrogen. The Alq3 target was fixed to the target holder made by copper and then liquid nitrogen was put into the target holder. The temperature of target cooled by liquid nitrogen was 77K. In this study, we have prepared Alq3 thin films by a Nd:YAG laser (532 nm) deposition method with the cooling target by liquid nitrogen. The experimental results suggest that Alq3 thin films are deposited at the fluence above 0.5 J/cm2. FT-IR spectra of the prepared films are as same as those of the Alq3 powder. UV-Vis spectrum shows that the prepared films have an absorption peak around 400 nm, which is distinct absorption peak of Alq3. The results suggest that structural and optical properties of the films prepared by cooling target are in agreement with Alq3 for organic electroluminescence.