权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Development of High Selective and High Sensitive Air Gas Sensor for Environmental Protection by PLD Method

PLD法开发高选择性、高灵敏度环保空气气体传感器

基本信息

批准号：
13555098
负责人：
SUDA Yoshiaki
金额：
$ 3.78万
依托单位：
Sasebo National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555098/
关键词：
Thin Film Gas Sensor PLD SnO_2 WO_3 Nd:YAG Laser Sputtering XPS Pd Nd:YAGレーザ環境保護用

项目摘要

In this research, the gas sensors based on tin dioxide (SnO_2) and tungsten oxide (WO_3) thin films doped with different amount of palladium (Pd) and gold (Au) were deposited by the PLD method. The PLD method has become a widely used technique for the deposition of thin films during the past few years due to the advantages of a simple setup, wide ranging deposition conditions, wider choice of materials and higher instantaneous deposition rates. The following conclusions can be drawn from the results.1)We have successfully deposited SnO_2 and WO_3 thin films by the pulsed Nd:YAG (532nm) and pulsed KrF excimer (248nm) laser deposition methods. The surface morphology of the films was observed by a field-emission scanning microscope (FE-SEM) and an atomic force microscope (AFM). The crystalline structure and crystallographic orientation were characterized by GXRD and the composition of the films was measured by X-ray photbelectron spectroscopy (XPS).2)We have successfully prepared H_2 sens … More itive SnO_2-Pd thin films using the new PLD method combined with d.c. sputtering. The films have a polycrystalline structure which is suitable for gas sensing. The Pd atomic concentration of the SnO_2-Pd film depends on the Pd sputtering discharge power. The gas sensitivity of the SnO_2-Pd film prepared using new.PLD method was increased with the sputtering discharge power of Pd.3)We have synthesized NOx sensitive WO_3-Au and WO_3-Pd thin films using new PLD method. The gas sensitivity of the WO_3-Au thin film prepared using new PLD method for 200ppm NO_2 gas was increased with the sputtering power of Au at the range of 3.5 -5 W.4)We prepared CrC, TiC, CN, cBN, TaN films as a hard material and TiO_2 films as a photocatalyst by PLD method. These processes were compared with the SnO_2 and WO_3 thin film gas sensor preparation process.Our experiments show that our new PLD process is simple and effective technique to fabricate high-quality thin film gas sensors. It might be very important to study PLD process scientifically and industrially. Less

本研究采用PLD法制备了掺杂不同量钯（Pd）和金（Au）的二氧化锡（SnO_2）和氧化钨（WO_3）薄膜。在过去的几年里，PLD方法由于其简单的设置、广泛的沉积条件、更广泛的材料选择和更高的瞬时沉积速率等优点，已成为一种广泛应用的薄膜沉积技术。从结果中可以得出以下结论。1)采用脉冲Nd:YAG （532nm）和脉冲KrF准分子（248nm）激光沉积方法成功制备了SnO_2和WO_3薄膜。采用场发射扫描显微镜（FE-SEM）和原子力显微镜（AFM）观察了膜的表面形貌。用GXRD对薄膜的晶体结构和取向进行了表征，并用x射线光电子能谱（XPS）对薄膜的组成进行了测定。2)采用新的PLD方法结合直流溅射技术，成功制备了H_2传感器和更敏感的SnO_2-Pd薄膜。该薄膜具有适合于气体传感的多晶结构。SnO_2-Pd薄膜的Pd原子浓度与Pd溅射放电功率有关。研究了新制备的SnO_2-Pd薄膜的气敏性。PLD方法随着pd的溅射放电功率的增加而增加。3)我们利用新的PLD方法合成了对NOx敏感的WO_3-Au和WO_3-Pd薄膜。采用PLD法制备的WO_3-Au薄膜在200ppm NO_2气体中气敏性提高，Au的溅射功率在3.5 ~ 5 w范围内。4)采用PLD法制备了CrC、TiC、CN、cBN、TaN薄膜作为硬材料，TiO_2薄膜作为光催化剂。并与SnO_2和WO_3薄膜气体传感器的制备工艺进行了比较。实验结果表明，该工艺是制作高质量薄膜气体传感器的一种简单有效的工艺。对可编程逻辑器件工艺的科学研究和工业应用具有重要意义。少