Development of Atomically Controlling CVD Apparatus for Fabrication of Si-Based Superlattice Devices

用于制造硅基超晶格器件的原子控制CVD设备的开发

• 批准号: 07555409
• 负责人: MUROTA Junichi
• 金额: $ 2.11万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555409/
• 关键词: Atomically Controlling CVD; Si-Based Superlattice Devices; Flash Heating CVD; Plasma Surface Treatment; Ultra small Devices; Impurity Doping; Low Temperature Selective Deposition of W; Langmuir-type Adsorption; 超微細MOSFET; ド-ピング制御; Si極薄窒化膜

In this scientific research, to develop ultimate ultra small structure process technology, we have aimed at establishing the Si-based atomically controlling CVD technology which is applicable for device fabrication and in which atomic layr mixing is suppressed by combining a flash heating CVD method and surface treatment with plasma irradiation etc.Moreover, we have investigated elucidation and formulation of low temperature surface adsorption and reaction process of Si-Ge-C,Si-N and W systems.As to the Si-Ge system, we have achieved atomic layr-by-layr growth of Si and Ge, and fabricated double-barrier resonant tunneling diodes and observed negative resistance. Moreover, in high concentration impurity doping of P and B into SiGe, we have discussed and formulated the adsorption and reaction process by modified Langmuir-type equations considering the surface bond sites. As to the Si-C system, we have achieved atomic-layr carbonization of Si (100) by CH_4 at 500-600ﾟC and clarified that … More the carbon amount depends on the surface impinging CH_4 molecules based on Langmuir-type equations. As to the Si-N system, we have achieved atomic-layr nitridation of Si (100) by NH_3 at 400ﾟC and clarified that the nitrogen amount depends on Langmuir-type adsorption and reaction equations considering desorption. As to low temperature selective deposition mechanism of W is also discussed based on the surface treatment by a preheating method and alternating supply of WF_6 and SiH_4 Furthermore, by using an ECR plasma, we achieved atomic-layr etching of Si, Ge, SiGe and silicon nitride and analyzed the adsorption and reaction process by considering Langmuir-type simple formalism.Atomically controlling CVD of Si, Ge, etc., is increasingly important technology, because of compatibility with integrated circuits and also because it has potential application to create artificial atomic stacking structures similar to the compound semiconductor structure by using the group IV elements which have been used as an elemental semiconductor. The success of this research project supplies a fundamental key to ultra small device fabrication technology with group IV semiconductors. Less

在本科学研究中，为了开发最终的超小结构工艺技术，我们的目标是建立适用于器件制造的Si基原子控制CVD技术，其中通过将闪速加热CVD方法和表面处理与等离子体照射等相结合来抑制原子层混合。研究了Si-Ge-C、Si-N和W体系低温表面吸附和反应过程的解释和公式，对于Si-Ge体系，我们已经实现了Si和Ge的原子层-层生长，并制备了双势垒共振隧穿二极管，观察到负阻。此外，在高浓度P和B掺杂SiGe中，我们还讨论了在考虑表面键位的情况下，吸附和反应过程，并用修正的Langmuir型方程进行了描述。对于Si-C体系，我们用CH_4在500-600 ℃实现了Si（100）的原子层碳化，阐明了 ...更多信息 碳量取决于表面撞击的CH_4分子，基于Langmuir型方程。对于Si-N体系，我们在400 ℃下用NH_3实现了Si（100）的原子层氮化，阐明了氮的量取决于Langmuir型吸附和考虑脱附的反应方程。此外，利用ECR等离子体实现了Si、Ge、SiGe和氮化硅的原子层刻蚀，并利用Langmuir型简单形式分析了吸附和反应过程，原子控制CVD Si、Ge等，由于与集成电路的兼容性，并且还由于其具有通过使用已经用作元素半导体的IV族元素来创建类似于化合物半导体结构的人工原子堆叠结构的潜在应用，因此，该技术是日益重要的技术。该研究项目的成功为IV族半导体的超小型器件制造技术提供了一个基本的关键。少

项目成果

S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," The 9th International Conference on Vapor Growth & Epitaxy. 116 (1996)

S. Kobayashi，：“使用锗气体的 LPCVD 中硅上锗的初始生长特性”，第九届国际气相生长会议

M. Sakuraba,: ""H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2"" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing,. (in press). (1997)

M. Sakuraba，：“通过稀释的 HF 浸渍和 H_2 退火对 Ge (100) 和 Si (100) 进行 H 终止”，第五届半导体器件制造清洁技术国际研讨会。

Y.Yamoto et.al.: "Surface Reaction of Altermately Supplied WF_6and SiH_4 Gases" Surf.Sci.,. (in press)(印刷中). (1998)

Y.Yamoto 等人：“交替供应的 WF_6 和 SiH_4 气体的表面反应”Surf.Sci.，（出版中）。

C.J.Lee, at al: "Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD" CVD XIV. PV97-25. 1356-1363 (1997)

C.J.Lee 等人：“使用超净 LPCVD 的 SiH_4-GeH_4-PH_3 气体系统中的磷掺杂对 Si_<1-x>Ge_x 外延薄膜生长的影响”CVD XIV。

K. Goto, J. Murota, F. Honma, T. Matsuura, and Y. Sawada: "A Super Self-Aligned Ultrashallow Junction Formation Using Selective Si_<1-x>Ge_x CVD in Deep-Submicron MOSFET's Fabrication" Proceedings of the 5th International Symposium on Ultra Large Scale In

K. Goto、J. Murota、F. Honma、T. Matsuura 和 Y. Sawada：“在深亚微米 MOSFET 的制造中使用选择性 Si_<1-x>Ge_x CVD 形成超级自对准超浅结”论文集