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Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System

Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System
用于高集成通信系统制造的SiGe系统MOS-HBT技术的开发
批准号:
11694123
负责人:
MUROTA Junichi
金额:
$4.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001

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中文摘要
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英文摘要
In this scientific research, in order to realize the high speed and large capacitance mobile communication system with low working voltage and low power consumption, a new mobile communication System-On-Chip which is mainly integrated by SiGe-based MOS and HBT have been developed under the 3-year-plan from 1999 with the co-work of the Innovation for High Performance Microelectronics (IHP), Germany. In the last year of the 3 years, the study on the ultra-small structure formation of SiGe and the ultra-high speed mobile-communication device fabrication was conducted. The study on the ultra-small SiGe structure formation includes the realization of the exact control of impurity-doped SiGe(C) thin film deposition, of the exact anisotropy etching control of ultra-small structure SiGe(C)-based semiconductor, of the integration of the adsorption/reaction constant for source gas molecules in CVD process, of the database development of the atomic layer growth and the atomic layer plasma process … More , of the heavily P-doped semiconductor, and of atomic order nitridation and atomic order nitrogen doping control. Moreover, the study on the ultra-high speed device fabrication includes the development and the investigation of highly controllable process technology, of ultra-large scale integrated circuit fabrication process, of the ultra-high speed device structure, and the evaluation of the fabricated devices. From these studies, especially, the CMOS applicability of 0.1-μm MOSFETs with super self-aligned ultra-shallow junction formed by selective B-doped SiGe epitaxy, the excellent low frequency noise characteristics of SiGe-channel pMOSFET, the device fabrication process and the structure of 100GHz-HBT, the metallization technology with ultra-low contact resistance, and the exact control of B- or P-doped SiGe(C) epitaxial growth have been reported. Furthermore, highly exact evaluation process of the ultra-small SiGe(C) structure, which is extremely important to device application, was developed. Less
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D. Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys.. Vol. 40, No. 4B. 2697-2700 (2001)
D.Lee等人:“使用SiH_4GeH_4-CH_3SiH_3-PH_3-H_2气体系统通过低压化学气相沉积在Si_<1-x-y>Ge_xC_y外延生长中掺杂磷”Jpn。
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T. Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"197th Meeting of the Electrochemical Society, Toronto, Canada, May 14-18. Abs. No. 294. (2000)
T. Kanetsuna 等人:“使用 ECR 等离子体在杂质掺杂硅上进行氯的表面吸附和反应”电化学协会第 197 届会议,加拿大多伦多,5 月 14 日至 18 日。
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Y, Shimamune et al.: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"2000 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, May 30-Jun. 2. Abs. No. F-IV.3. (2000)
Y, Shimamune 等人:“Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4”2000 年春季会议,欧洲材料研究学会 (E-MRS),法国斯特拉斯堡,5 月 30 日至 6 月。
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Y. Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Proceedings of the 15th International Conference on Chemical Vapor Deposition: CVD XV, (M. D. Allendorf, T. M. Bessman, M. L. Hitchman, M. Robinson, Y. Shimogaki, F. Teyssa
Y. Yamamoto等人:“选择性W-CVD中Si和SiO_2上的WF_6的表面吸附”第15届化学气相沉积国际会议论文集:CVD XV,(M. D. Allendorf,T. M. Bessman,M. L. Hitchman,M. Robinson,
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177
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