Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System
Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System
批准号:
11694123
负责人:
MUROTA Junichi
金额:
$4.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001
中文摘要
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英文摘要
In this scientific research, in order to realize the high speed and large capacitance mobile communication system with low working voltage and low power consumption, a new mobile communication System-On-Chip which is mainly integrated by SiGe-based MOS and HBT have been developed under the 3-year-plan from 1999 with the co-work of the Innovation for High Performance Microelectronics (IHP), Germany. In the last year of the 3 years, the study on the ultra-small structure formation of SiGe and the ultra-high speed mobile-communication device fabrication was conducted. The study on the ultra-small SiGe structure formation includes the realization of the exact control of impurity-doped SiGe(C) thin film deposition, of the exact anisotropy etching control of ultra-small structure SiGe(C)-based semiconductor, of the integration of the adsorption/reaction constant for source gas molecules in CVD process, of the database development of the atomic layer growth and the atomic layer plasma process … More , of the heavily P-doped semiconductor, and of atomic order nitridation and atomic order nitrogen doping control. Moreover, the study on the ultra-high speed device fabrication includes the development and the investigation of highly controllable process technology, of ultra-large scale integrated circuit fabrication process, of the ultra-high speed device structure, and the evaluation of the fabricated devices. From these studies, especially, the CMOS applicability of 0.1-μm MOSFETs with super self-aligned ultra-shallow junction formed by selective B-doped SiGe epitaxy, the excellent low frequency noise characteristics of SiGe-channel pMOSFET, the device fabrication process and the structure of 100GHz-HBT, the metallization technology with ultra-low contact resistance, and the exact control of B- or P-doped SiGe(C) epitaxial growth have been reported. Furthermore, highly exact evaluation process of the ultra-small SiGe(C) structure, which is extremely important to device application, was developed. Less
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T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B. Vol.89,Issues 1-3. 120-124 (2002)
T.Yamashiro等人:“使用选择性Si_<1-x>Ge_x CVD的MOSFET中超浅结的超级自对准技术”材料科学与工程B.第89卷,第1-3期。
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通讯作者:
J.Murota et al.: "In-Situ Doping in CVD Epitaxial Si_<1-x>Ge_x Heavy-Doping and Electrical Characteristics"1999 Spring Meeting, Materials Research Society. 328-329 (1999)
J.Murota等人:“CVD外延Si_1-x>Ge_x重掺杂和电特性中的原位掺杂”1999年春季会议,材料研究学会。
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通讯作者:
Y.Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"proceedingsof the 15th International Conference on Chemical Vapor Deposition : CVD XV. No.928 (2000)
Y.Yamamoto等人:“选择性W-CVD中WF_6在Si和SiO_2上的表面吸附”第15届国际化学气相沉积会议论文集:CVD XV。
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D.Lee et al.: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-2
D.Lee 等人:“超洁净 LPCVD 在 Si(100) 上的杂质掺杂 Si_<1-x-y>Ge_xC_y 的外延生长和电特性”应用于 ULSI 技术的选择性和功能薄膜沉积技术研讨会(第 29 届 IUVSTA 研讨会)
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M.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. (No.D-VIII). 9 (2001)
M.Fujiu 等人:“碳对 Ge(100) 上形成的硅原子层的热稳定性的影响”2001 年春季会议,欧洲材料研究学会。
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共 177 条
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财政年份:2007
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Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor Heterostructures
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Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier Concentration
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财政年份:2001
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Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices
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批准号:08405022
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资助金额:$7.1万
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财政年份:1996
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Development of Atomically Controlling CVD Apparatus for Fabrication of Si-Based Superlattice Devices
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批准号:07555409
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项目类别:Grant-in-Aid for Scientific Research (A)
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财政年份:1995
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A STUDY OF ULTRASMALL DEVICE CONTAINING NANOMETER-CONTROLLED Si-Ge HETEROLAYER
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批准号:04452167
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资助金额:$3.71万
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财政年份:1992
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负责人:MUROTA Junichi
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依托单位:
国内基金
海外基金
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