Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier Concentration

使用超高载流子浓度的半导体结构在金属和半导体之间形成非常低的接触电阻

• 批准号: 13355013
• 负责人: MUROTA Junichi
• 金额: $ 27.71万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355013/
• 关键词: IV group semiconductor; impurity doping; atomic layer; contact resistance; CVD; SiGeC; P; B; B; IV族半導体結晶; CDV

In this research, heavily impurities (B and P) were doped in SiGeC heterostructure using atomically controlled low-pressure chemical vapor deposition (LP-CVD) in order to form a very low contact resistance between metal and semiconductor.Formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (PH_3 and B_2H_6) on Si(100) and Ge(100) have been achieved using atomically controlled ultraclean LP-CVD. Heavily impurity doped epitaxial Si films with the impurity concentration of over 10^<21>cm^<-3> are formed by an atomic-layer doping technique. By growing the multi-layer P-doped epitaxial Si with a high carrier concentration at a very low temperature of 450℃ on the P-doped SiGe films, very low contact resistivity of 6.5x10^<-8>Ωcm^2 between W and the Si film has been obtained. For the B-doped SiGeC films with a high carrier concentration, very low contact resistivity is obtained to be 3.8x10^<-8>Ωcm^2 between W and the Si film, 3x10^8<-8>Ωcm^2 between Ti and the Si film.This heavily impurity-doping technique promises to achieve very low contact resistance between metal and semiconductor for high performance semiconductor devices.

在本研究中，采用原子控制低压化学气相沉积（LP-CVD）法在SiGeC异质结构中掺杂重杂质（B和P），以形成金属与半导体之间的极低接触电阻，在氢化物气体的热吸附和反应中形成1-3个IV族或相关原子层用原子控制的超净LP-CVD方法在Si（100）和Ge（100）上制备了PH_3和B_2H_6的单晶。通过原子层掺杂技术形成杂质浓度超过10 μ cm-3的重掺杂外延Si膜<21><-3>。通过在450℃的极低温度下在掺P SiGe薄膜上生长具有高载流子浓度的多层掺P外延Si，获得了6.5 × 10 ^ Ω cm ^2的极低接触电阻率<-8>。对于高载流子浓度的B掺杂SiGeC薄膜，W与Si膜之间的接触电阻率为3.8 × <-8>10^8 Ω cm ^2，Ti<-8>与Si膜之间的接触电阻率为3 × 10^8 Ω cm ^2，这种重掺杂技术有望实现高性能半导体器件中金属与半导体之间的低接触电阻。

项目成果

T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J.Vac.Sci.Technol.A. Vol.19, No.4, Part II. 1907-1911 (2001)

T.Watanabe 等人：“Si (100) 的原子级热氮化和 Si 的后续生长”J.Vac.Sci.Technol.A。

D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H?2 Gas System"Jpn.J.Appl.Phys.. Vol.40, Part1, No.4B. 2697-2700 (2001)

D.Lee等：“使用SiH_4-GeH_4-CH_3SiH_3-PH_3-H 2 气体系统通过低压化学气相沉积进行Si_<1-x-y>Ge_xC_y外延生长中的磷掺杂”Jpn.J.Appl.Phys

Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Epitaxially Grown at 4501℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, June 5-8, 2001 Abs.. No.D-X,3.

Y. Shimamune 等人：“Doping and Electrical Characteristics of Si Films Epitcentrically Grown at 4501℃ by Alternately Supplied PH_3 and SiH_4”2001 年春季会议，欧洲材料研究学会，法国斯特拉斯堡，2001 年 6 月 5-8 日摘要编号D-X，3。

T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium, San Francisco, California, Oct.29-Nov.2. PS-MoP10. 53 (2001)

T.Seino 等人：“超薄二氧化硅薄膜的原子级等离子体氮化”AVS 第 48 届国际研讨会，加利福尼亚州旧金山，10 月 29 日至 11 月 2 日。

D.Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium, San Francisco, California, Oct.29-Nov.2. EL-WeA3. 179 (2001)

D.Muto 等人：“通过交替 SiH_4 供应和 Ar 等离子体暴露实现 Si 的自限层逐层生长”AVS 第 48 届国际研讨会，加利福尼亚州旧金山，10 月 29 日至 11 月 2 日。