Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier Concentration

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In this research, heavily impurities (B and P) were doped in SiGeC heterostructure using atomically controlled low-pressure chemical vapor deposition (LP-CVD) in order to form a very low contact resistance between metal and semiconductor.Formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (PH_3 and B_2H_6) on Si(100) and Ge(100) have been achieved using atomically controlled ultraclean LP-CVD. Heavily impurity doped epitaxial Si films with the impurity concentration of over 10^<21>cm^<-3> are formed by an atomic-layer doping technique. By growing the multi-layer P-doped epitaxial Si with a high carrier concentration at a very low temperature of 450℃ on the P-doped SiGe films, very low contact resistivity of 6.5x10^<-8>Ωcm^2 between W and the Si film has been obtained. For the B-doped SiGeC films with a high carrier concentration, very low contact resistivity is obtained to be 3.8x10^<-8>Ωcm^2 between W and the Si film, 3x10^8<-8>Ωcm^2 between Ti and the Si film.This heavily impurity-doping technique promises to achieve very low contact resistance between metal and semiconductor for high performance semiconductor devices.