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Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices

超小型 IV 族半导体器件制造过程中的 Langmuir 吸附和反应控制

基本信息

批准号：
08405022
负责人：
MUROTA Junichi
金额：
$ 7.1万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08405022/
关键词：
Langmuir-type Adsorption and Reaction Group IV Semiconductor Ultrasmall Devices Atomic-Layer Growth Atomic-Layer Etching Impurity Doping Hydrogen Termination Low-Temperature Heteroepitaxial Growth 表面処理

项目摘要

In this scientific research, to establish fabrication process technology of ultrasmall group IVsemiconductor devices, extended researches have been carried out including fundamentals and applications of Langmuir-type adsorption/reaction process such as atomic-layer growth and etching. As to atomically controlled processing, by utilizing a low-temperature ultraclean reaction atmosphere, flash heating by Xe lamps, and low-energy ion irradiation by an ECR plasma, we have achieved atomic layer-by-layer growth of Si and Ge, atomic-layer nitridation of Si by NH_3 at 400ﾟC, atomic-layer carbonization of Si(100) by CH_4 at 500-600ﾟC, atomic-layer adsorption of SiH3CH3 on Si and Ge, atomic-layer doping of P on Si and Ge, fractional atomic-layer etching of a SiGe system, atomic-layer role-share etching of silicon nitride, etc. Adsorption and reaction process in low temperature selective deposition of W has been also investigated by alternate supply of WF6 and SiH_4. Each of these atomic-order processes has been described by Langmuir-type simple adsorption and reaction formalism, which contributes to establish a base of a high precision control of the process. As to device fabrication process, we have fabricated ultrasmall MOSFETs utilizing super-self-aligned ultrashallow junction formation in the source/drain region, and MOSFETs with a SiGe epitaxial layer as a channel. Also, we have developed each process such as selective epitaxy of SiGe and in-situ heavy doping with P and B, highly selective anisotropic etching of heavily doped polysilicon, reduction of source/drain resistance by selective growth of W, as well as a total ultrasmall device process by combination of these individual processes. These research results supply a fundamental key to ultrasmall device fabrication technology with group IVsemiconductors.

在本科学研究中，为了建立超小型IV族半导体器件的制造工艺技术，进行了扩展研究，包括原子层生长和蚀刻等朗缪尔型吸附/反应工艺的基础和应用。在原子控制工艺方面，我们利用低温超净反应气氛、氙灯快速加热和ECR等离子体低能离子辐照，实现了Si和Ge的原子层生长、400 ℃下NH_3对Si的原子层氮化、500-600 ℃下CH_4对Si（100）的原子层碳化，SiH_3CH_3在Si和Ge上的原子层吸附，P在Si和Ge上的原子层掺杂，SiGe系统的原子层分步刻蚀，氮化硅的原子层角色共享刻蚀等。这些原子级过程中的每一个已被描述的Langmuir型简单的吸附和反应的形式主义，这有助于建立一个高精度的控制过程的基础。在器件制作工艺方面，我们已经制作了超小型MOSFET，采用超自对准的超浅结形成在源/漏区，和MOSFET的SiGe外延层作为沟道。此外，我们已经开发了每个过程，如SiGe的选择性外延和P和B的原位重掺杂，重掺杂多晶硅的高选择性各向异性蚀刻，通过选择性生长W来降低源极/漏极电阻，以及通过这些单独过程的组合来实现总的超小型器件过程。这些研究结果为IV族半导体超小型器件的制造技术提供了一个基本的关键。