Epitaxial Growth and Applications of New Dissimilar Heterostructures

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We have performed international collaborations on "Epitaxial Growth and Applications of New Dissimilar Heterostructures". Recent progress of epitaxial growth technology has made it possible to prepare a variety of new artificial thin films and heterostructures (HS's) consisting of dissimilar materials. The dissimilar HSs include epitaxial ferromagnet/semiconductor HSs such as MnGa/GaAs, MnAs/GaAs, ferromagnetic-semiconductor (GaMnAs)/nonmagnetic-semiconductor (GaAs, AlAs), and semimetal (ErAs)/III-V (GaAs/AlAs). We have succcessfully grown these new artificial HSs by using molecular beam epitaxy (MBE), and revealed their structural, electronic, optical and magnetic properties. Some of the properties clarified by our research are found to be useful for some device applicatiopns, such as nagnetic nonvolitile memory, optical isolators coupled III-V semiconducror electronic/optical circuitry, as well as three terminal resonant tunneling devices and high speed metal-base transistors.