Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems

我们已经报道在氢端硅表面上的金属薄膜的外延生长模式与在清洁的硅表面上的外延生长方式略有不同。我们的课题是在科学研究资助项目的支持下，结合经典方法开发一种新的氢分析技术，并将其应用于实际的氢-硅系统。新的发现如下：(1)利用反冲探测系统，结合低能电子衍射(LEED)和包含氢绝对体积的低能离子散射(ISS)，为研究氢致外延提供了强有力的工具。(2)采用分子束外延方法和溅射方法在硅衬底上制备金属外延薄膜，研究氢对薄膜的作用。(3)特定材料如银、铅诱导的二维超晶格的初始阶段以及氢终止后向三维本征团簇生长的转变。这些结果为更好地理解氢终止对异质外延的修饰作用奠定了基础。

We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to develop a new hydrogen analysis technique by combined the classical methods and apply to the real hydrogen-silicon systems. The new findings are as follows.(1) Combining the low energy electron diffraction (LEED) and the low energy ion scattering (ISS) containing detection of the absolute volume of hydrogen using the recoil detection system causes the powerful tool to investigate the hydrogen induced epitaxy. We also used the STM for the ex-situ observation of surface morphology.(2) Not only MBE methods but also sputtering methods were applied to make metal epitaxial films on Si substrates to investigate the role of hydrogen on the films.(3) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.These results cause the key of better understanding of modification of heteroepitaxy by the Hydrogen termination.