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Joint Study on Hydrogen-Mediated Epitaxy

氢介导外延联合研究

基本信息

批准号：
08044146
负责人：
OURA Kenjiro
金额：
$ 8.51万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

项目摘要

Our recently discovered phenomena of "hydrogen-mediated epitaxy", in which the epitaxy of a film growing on a Silicon substrate is improved by terminating the substrate by hydrogen atoms, have received considerable attention in connection not only with fundamental science on interaction of hydrogen with surfaces, but also with the possibilities of both the promotion of heteroepitaxy and the formation of atomically abrupt interface. The purpose of this research project is to obtain fundamental data for elucidation of the mechanism of hydrogen-mediated epitaxy on atomic scale, novel development of materials such as semiconductors, metals and ceramics, and fabrication of quantum nano-structures with use of self-organization triggered by atomic hydrogen. The new findings worthy of special mention are as follows.(1)When hydrogen-mediated epitaxy was applied to fabricate a Gedelta -doped structure in Si, the surface segregation of Ge atoms was suppressed in the presence of hydrogen, resulting in improvement of the interface abruptness.(2)When hydrogen-mediated epitaxy was applied to Ge thin film growth on Si substrates dynamically supplied atomic hydrogen during Ge growth acted as a surfactant, which promoted layer-by-layer growth. Hydrogen atoms desorbed from the growth front after adsorption for some residence time, indicating a dynamical effect of hydrogen-surfactant.(3)In the self-organization of 2D metal/Si surface phase into 3D metal clusters triggered by atomic hydrogen, the reconstructed structures of substrate Si atoms were frozen by hydrogen-termination for In/Si and other systems, indicating the possible occurrence of atomic-hydrogen-induced self-organization of substrate Si atoms.These results cause the key of better understanding of mechanism of hydrogen-mediated epitaxy.

我们最近发现的“氢介导外延”现象，即通过用氢原子终止衬底来改善在硅衬底上生长的薄膜的外延，不仅与氢与表面相互作用的基础科学有关，而且与促进异质外延和形成原子突变界面的可能性有关，受到了相当多的关注。该研究项目的目的是获取基础数据，以阐明原子尺度上氢介导外延的机制，半导体、金属和陶瓷等材料的新型开发，以及利用原子氢引发的自组织制造量子纳米结构。值得特别提及的新发现如下：(1)当氢介导外延用于在Si中制造Geδ掺杂结构时，在氢存在的情况下，Ge原子的表面偏析受到抑制，从而改善了界面突变性。(2)当氢介导外延应用于Si衬底上的Ge薄膜生长时，在Ge过程中动态提供原子氢生长起到表面活性剂的作用，促进逐层生长。氢原子在吸附一段时间后从生长前沿解吸，表明氢表面活性剂的动力学效应。(3)在原子氢引发的2D金属/Si表面相自组织成3D金属团簇的过程中，基底Si原子的重构结构被In/Si等体系的氢封端所冻结，表明可能发生原子氢诱导衬底硅原子的自组织。这些结果是更好地理解氢介导外延机制的关键。