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Physics of Hetero-Epitaxial Growth onto the hydrogen terminated Si surface under the low temperature condition

低温条件下氢封端硅表面异质外延生长物理

基本信息

批准号：
06402025
负责人：
OURA Kenjiro
金额：
$ 22.91万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06402025/
关键词：
Surface Hydrogen Ion beam analysis STM Epitaxy metal Si interface エピタキシ-

项目摘要

We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to clarify or to get a key to understand the mechanism of the role of Hydrogen to thin film growth. We observed the phenomena atomically with use of newly introduced scanning tunneling microscopy (STM). The new findings are as follows.(1) To get the information of role of substrate temperature for the hydrogen termination onto the Si surfaces, we performed the low temperature experiments by a high energy ion beam method. At low temperature of about 100K,Hydrogen plays a role of etching source for the Si surfaces rather than preventive source of the Si surfaces. As a result, good epitaxial thin films could not be obtained under the condition of low temperature adsorption.(2) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.(3) Through the change of 3-dimensional clusters from the 2-dimensional superlattices, bare Si areas are produced, where Si atoms form structures of 1-dimensional, 2-dimensional or and so on depending the initial 2-dimensional super lattice structures.These results cause the key of better understanding of modification of hetero-epitaxy by the Hydrogen termination.

我们已经报道了在氢终止的Si表面上的金属薄膜的外延生长模式与在清洁的Si表面上的略有不同。本研究课题是在科学研究补助金资助下进行的，目的是阐明或获得理解氢对薄膜生长作用机制的关键。我们观察到的现象，原子与使用新引进的扫描隧道显微镜（STM）。新的调查结果如下。(1)为了得到衬底温度对氢在硅表面终止的影响，我们用高能离子束方法进行了低温实验。在100K左右的低温下，氢对硅表面起腐蚀源的作用，而不是硅表面的防护源。因此，在低温吸附条件下不能获得良好的外延薄膜。(2)由Ag、Pb和In等特定材料诱导的二维超晶格的初始阶段在氢终止后转变为三维本征团簇生长。(3)通过二维超晶格向三维团簇的转变，产生了裸硅区，硅原子在裸硅区根据初始的二维超晶格结构形成一维、二维等结构，这些结果是理解氢终止对异质外延改性的关键。