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CONTROL OF CARBON NANOTUBE GROWTH USING SELF-ORGANIZED CATALYST NANOCLUSTERS AND ITS APPLICATION TO NANODEVICES

自组织催化剂纳米团簇控制碳纳米管生长及其在纳米器件中的应用

基本信息

批准号：
14205010
负责人：
OURA Kenjiro
金额：
$ 35.19万
依托单位：
OSAKA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205010/
关键词：
carbon nanotube carbon nanotube bridging between electrodes thermal chemical vapor deposition dispersing carbon nanotube thermal annealing electron transport properties contact resistance field effect transistor CNT 自己組織化プロセス触媒金属ナノクラス

项目摘要

Electrical conductance of carbon nanotubes (CNTs) was measured by a newly developed probe system. The CNTs were bridged between the electrodes by using thermal CVD with self-organized catalyst nanoclusters or dispersing commercial CNTs on the patterned electrodes. Furthermore, Ti electrodes were deposited over both ends of the CNT bridges in order to reduce the contact resistance between CNTs and electrodes. A test device of field effect transistor (FET) with a channel of CNTs was fabricated.After annealing the CNTs bridging between the electrodes in a vacuum, the contact resistance was reduced, indicating the Ti carbide could form at the interface of the electrodes. Furthermore, Ti electrodes were deposited over both ends of the CNTs using photolithography and lift-off technique, resulting in reduction of the contact resistance. The conductance was found to be proportional to A/L as well as B/L, where A, B, and L is the cross section, circumference, and length of CNTs. This means that diffusive transport occurs in our CNTs.We have fabricated an FET test device using CNTs. The drain current was measured with changing gate voltages. The drain current was modulated by the gate voltages. The value of transconductance per unit channel width of the FET test devices was found to be comparable to that of conventional p-type MOSFET. The performance of the FET test devices could be improved by changing the channel length or the structure of the electrodes.

通过新开发的探针系统测量碳纳米管（CNT）的电导率。通过使用自组织催化剂纳米团簇的热CVD或将商业碳纳米管分散在图案化电极上，碳纳米管在电极之间桥接。此外，在碳纳米管桥的两端沉积钛电极，以减少碳纳米管和电极之间的接触电阻。制作了具有碳纳米管沟道的场效应晶体管（FET）测试装置。桥接在电极之间的碳纳米管在真空中退火后，接触电阻降低，表明电极界面处形成了Ti碳化物。此外，使用光刻和剥离技术在碳纳米管的两端沉积钛电极，从而降低了接触电阻。发现电导与 A/L 和 B/L 成正比，其中 A、B 和 L 是碳纳米管的横截面、周长和长度。这意味着我们的 CNT 中会发生扩散传输。我们已经使用 CNT 制造了 FET 测试装置。漏极电流是通过改变栅极电压来测量的。漏极电流由栅极电压调制。 FET 测试器件每单位沟道宽度的跨导值与传统 p 型 MOSFET 相当。 FET 测试装置的性能可以通过改变沟道长度或电极结构来提高。