Synthesis of Carbon Nanotubes with Long Length and High Density and its Application to Nanodevices

长高密度碳纳米管的合成及其在纳米器件中的应用

基本信息

  • 批准号:
    16206004
  • 负责人:
  • 金额:
    $ 32.2万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 财政年份:
    2004
  • 资助国家:
    日本
  • 起止时间:
    2004 至 2005
  • 项目状态:
    已结题

项目摘要

Carbon nanotubes (CNTs) have great interesting properties, which make CNTs and extraordinary candidate material for many applications. For example, supercapacitors and sensors for ultrasensitive detection fo bio or organic molecules have been proposed. To realize these devices using CNTs, it is indispensable to control the morphorogy of CNTs. So far, long CNTs have been synthesized by means of thermal chemical vapor deposition. Vertical alignment of CNTs has been achieved by the plasma enhanced chemical vapor deposition. However, a method for controlling both length and alignment of CNTs has not been realized. Moreover, as for synthesis of CNTs with high density, although the CNT density up to 10^9/cm^2 was synthesized, CNTs with more than 10^<10>/cm^2 of the density have not been reported. Vertically aligned CNTs with long length and high density have a promising morphology for the electrochemical devices and the sensors for ultrasensitive detection of bio or organic molecules that require a large effective surface area.In this project, we have developed the method for synthesis of CNTs with long length and high density towards nanodevices. The new findings worthy of special mention are as follows.A test device of electrochemical double layer capacitors (EDLC) incorporating the vertically aligned CNTs with long and high density, which are successfully synthesized using Fe/Al multilayer catalyst films by thermal chemical deposition, is fabricated as electrodes. The EDLC device exhibited a stable charge/discharge characteristic and the specific capacitance did not deteriorate after 10000 cycles.
碳纳米管(CNTs)具有许多有趣的性质,这使得它成为许多应用领域的杰出候选材料。例如,用于超灵敏检测生物或有机分子的超级电容器和传感器已经被提出。要实现碳纳米管的这些器件,对碳纳米管的形貌控制是必不可少的。到目前为止,人们已经通过热化学气相沉积的方法合成了长碳纳米管。通过等离子体增强化学气相沉积实现了碳纳米管的垂直取向。然而,一种同时控制碳纳米管长度和取向的方法还没有实现。此外,在高密度碳纳米管的合成方面,虽然已合成出密度高达109/cm~2的碳纳米管,但密度大于10^~(-1;10)/cm~2的碳纳米管尚未见报道。垂直排列的长长高密度碳纳米管具有良好的形貌,可用于生物或有机分子的超灵敏检测,需要较大的有效比表面积。特别值得注意的新发现如下:利用热化学沉积的Fe/Al多层催化膜成功地制备了垂直排列的长、高密度碳纳米管作为电极的电化学双电层电容器(EDLC)测试装置。该器件具有稳定的充放电特性,循环10000次后比电容没有下降。

项目成果

期刊论文数量(14)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Synthesis of Aligned Carbon Nanotubes by Inductively Coupled Plasma Chemical Vapor Deposition
电感耦合等离子体化学气相沉积法合成定向碳纳米管
Carbon Nanostructures Grown on Graphite Substrates without Catalyst by Pulsed Laser Deposition
无催化剂脉冲激光沉积在石墨基底上生长碳纳米结构
Ultra-Low-Threshold Field Electron Emission from Pillar Array of Aligned Carbon Nanotube Bundles
定向碳纳米管束柱阵列的超低阈值场电子发射
Synthesis of randomly oriented carbon nanotubes on SiO_2 substrates by thermal chemical vapor deposition toward field electron emitters
场电子发射器热化学气相沉积法在 SiO_2 基底上合成随机取向碳纳米管
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    新谷 亮;君塚信夫;Kenjiro Oura 他10名
  • 通讯作者:
    Kenjiro Oura 他10名
Synthesis of Randomly Oriented Carbon Nanotubes on SiO_2 Substrates by Thermal Chemical Vapor Deposition towards Field Electron Emitters
场电子发射体热化学气相沉积法在SiO_2基底上合成随机取向碳纳米管
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    田中慎一;菅野誉士;川合知二(分担執筆);Winadda Wongwiriyapan;Takashi Ikuno;Katsunori Aoki;Chih-Wei Chang;Takashi Ikuno;Takashi Ikuno;Takashi Ikuno;Takashi Ikuno;Takashi Ikuno;Winadda Wongwiriyapan;Shinya Yoshimoto;Masaru Kishida;Winadda Wongwiriyapan;Takashi Ikuno;Takashi Ikuno;Rei Hobara;Shin-ichi Honda
  • 通讯作者:
    Shin-ichi Honda
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OURA Kenjiro其他文献

OURA Kenjiro的其他文献

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{{ truncateString('OURA Kenjiro', 18)}}的其他基金

CONTROL OF CARBON NANOTUBE GROWTH USING SELF-ORGANIZED CATALYST NANOCLUSTERS AND ITS APPLICATION TO NANODEVICES
自组织催化剂纳米团簇控制碳纳米管生长及其在纳米器件中的应用
  • 批准号:
    14205010
  • 财政年份:
    2002
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study on Growth Mechanism of Carbon Nanotubes Grown Using Self-Organized Catalyst Nanoclusters
自组织催化剂纳米团簇生长碳纳米管的生长机理研究
  • 批准号:
    13355003
  • 财政年份:
    2001
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Ion Scattering and Recoiling Spectroscopy for In Situ Monitoring of Semiconductor Surface Processes in Gas Phase Atmosphere
气相气氛中半导体表面过程原位监测的离子散射和反冲光谱技术的发展
  • 批准号:
    11305006
  • 财政年份:
    1999
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Microscopic Analysis of Surface Hydrogen and its Application to Nano-Fabrication Techniques
表面氢的显微分析及其在纳米加工技术中的应用
  • 批准号:
    10355002
  • 财政年份:
    1998
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A).
Surface Modification of Hydrogen-Terminated Silicon Substrate using Extra-Low Energy Electron Beam
使用超低能电子束对氢封端硅衬底进行表面改性
  • 批准号:
    09450017
  • 财政年份:
    1997
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Joint Study on Hydrogen-Mediated Epitaxy
氢介导外延联合研究
  • 批准号:
    08044146
  • 财政年份:
    1996
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems
结合经典方法开发新的氢分析方法及其在H/Si体系中的应用
  • 批准号:
    08555009
  • 财政年份:
    1996
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Ecology and Dynamics of Hydrogen at Semiconductor Surface
半导体表面氢的生态学和动力学
  • 批准号:
    07305049
  • 财政年份:
    1995
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Physics of Hetero-Epitaxial Growth onto the hydrogen terminated Si surface under the low temperature condition
低温条件下氢封端硅表面异质外延生长物理
  • 批准号:
    06402025
  • 财政年份:
    1994
  • 资助金额:
    $ 32.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)

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