Microscopic Analysis of Surface Hydrogen and its Application to Nano-Fabrication Techniques

表面氢的显微分析及其在纳米加工技术中的应用

基本信息

  • 批准号:
    10355002
  • 负责人:
  • 金额:
    $ 22.72万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A).
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 2000
  • 项目状态:
    已结题

项目摘要

So far, several surface analytical techniques have been applied to obtain average information on surface hydrogen. However, in order to develop nano-fabrication techniques mediated by surface hydrogen, it is desired to establish a novel method that can analyze hydrogen residing locally on the surface. The purpose of this research project is to elucidate the behavior of locally residing surface hydrogen on atomic scale. For this purpose, (A) we have combined newly introduced low-energy elastic recoil detection analysis (LE-ERDA) for quantitative analysis of the amount of surface hydrogen with scanning tunneling microscopy (STM). (B) Using the new apparatus, we have developed understanding of the behavior of locally residing surface hydrogen, and attempted their application to nano-fabrication techniques mediated by surface hydrogen. The new findings worthy of special mention are as follows.(1) With a good grasp of correlation between macroscopic information obtained by LE-ERDA and microscopic information from STM, we analyzed several processes in surface local area induced by hydrogen-mediated surface modification such as surface passivation, structure stabilization, selforganization. In particular, as for the hydrogen-induced self-organization, for metal/semiconductor surfaces such as In/Si (100), Al/Si (100) and Ag/6H-SiC (0001), we found the formation of metal nano-clusters and the peculiar hydrogen-terminated surface phases dependent on the initial surface structure.(2) Based on the above results, we attempted a nano-fabrication of surface local area using hydrogenmediated surface modification processes. We aimed establishment of nano-fabrication processes using local hydrogen extraction by STM.We succeeded in the STM patterning of the Si (100) 4xl-H surface, and found the peculiar local surface phase of the Si (100) c (8x2) on the hydrogen extracted area.These results cause the key of better understanding o the behavior of locally residing surface hydrogen.
到目前为止,已经应用了几种表面分析技术来获取表面氢的平均信息。然而,为了开发由表面氢介导的纳米制造技术,需要建立一种能够分析局部存在于表面的氢的新方法。该研究项目的目的是阐明原子尺度上局部存在的表面氢的行为。为此,(A)我们结合了新推出的低能弹性反冲检测分析(LE-ERDA)与扫描隧道显微镜(STM)对表面氢含量进行定量分析。 (B) 使用新设备,我们了解了局部存在的表面氢的行为,并尝试将其应用于由表面氢介导的纳米制造技术。值得特别提及的新发现如下:(1)充分掌握LE-ERDA获得的宏观信息与STM获得的微观信息之间的相关性,分析了氢介导的表面改性引起的表面局部区域的几个过程,如表面钝化、结构稳定、自组织。特别是,对于氢诱导自组织,对于In/Si(100)、Al/Si(100)和Ag/6H-SiC(0001)等金属/半导体表面,我们发现金属纳米团簇的形成和奇特的氢封端表面相依赖于初始表面结构。(2)基于上述结果,我们尝试利用 氢介导的表面改性过程。我们的目标是通过STM建立局部氢提取的纳米制造工艺。我们成功地对Si(100)4xl-H表面进行STM图案化,并在氢提取区域发现了Si(100)c(8x2)的特殊局部表面相。这些结果成为更好地理解局部表面氢行为的关键。

项目成果

期刊论文数量(25)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
K. Oura 他 8他: "Analysis of surface structures through determination of their composition using-STM : Si(100) 4x3-In and Si(111)4x1-In"Physical Review. B60. 14372-14381 (1999)
K. Oura 等人 8 等人:“通过使用 STM 测定表面结构:Si(100) 4x3-In 和 Si(111)4x1-In”物理评论 B60。 1999)
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    0
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A.A.Saranin, V.G.Lifshits, M.Katayama and K.Oura: "Composition and Surface Structure of Quantum Chains on a In/Si (111) Surface"Jpn.J.Appl.Phys.. 39, No.4A. L306-L308 (2000)
A.A.Saranin、V.G.Lifshits、M.Katayama 和 K.Oura:“In/Si (111) 表面上量子链的组成和表面结构”Jpn.J.Appl.Phys.. 39,No.4A。
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M.Katayama 他6名: "Adsorption of Atomic Hydrogen on Ag-Covered 6H-SiC(0001) Surface"Jpn.J.Appl.Phys.. 39. 4340-4342 (2000)
M.Katayama等6人:“Ag覆盖的6H-SiC(0001)表面上原子氢的吸附”Jpn.J.Appl.Phys.. 39. 4340-4342 (2000)
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  • 影响因子:
    0
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M.Katayama 他9名: "Adsorption of Atomic Hydrogen on the Si (001) 4x3-In Surface Studied by Coaxial Impact Collision Ion Scattering Spectroscopy and Scanning Tunneling Microscopy"J.Vac.Sci.Technol.. B17. 983-988 (1999)
M.Katayama 等 9 人:“通过同轴碰撞碰撞离子散射光谱和扫描隧道显微镜研究 Si (001) 4x3-In 表面上原子氢的吸附”J.Vac.Sci.Technol.. B17。 1999)
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  • 影响因子:
    0
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片山光浩 他5名: "Ag/SiC(0001))表面上への原子状水素吸着過程のSTM観察"表面科学. 21. 398-404 (2000)
Mitsuhiro Katayama 等 5 人:“Ag/SiC(0001))表面原子氢吸附过程的 STM 观察”表面科学 21. 398-404 (2000)。
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OURA Kenjiro其他文献

OURA Kenjiro的其他文献

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{{ truncateString('OURA Kenjiro', 18)}}的其他基金

Synthesis of Carbon Nanotubes with Long Length and High Density and its Application to Nanodevices
长高密度碳纳米管的合成及其在纳米器件中的应用
  • 批准号:
    16206004
  • 财政年份:
    2004
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
CONTROL OF CARBON NANOTUBE GROWTH USING SELF-ORGANIZED CATALYST NANOCLUSTERS AND ITS APPLICATION TO NANODEVICES
自组织催化剂纳米团簇控制碳纳米管生长及其在纳米器件中的应用
  • 批准号:
    14205010
  • 财政年份:
    2002
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study on Growth Mechanism of Carbon Nanotubes Grown Using Self-Organized Catalyst Nanoclusters
自组织催化剂纳米团簇生长碳纳米管的生长机理研究
  • 批准号:
    13355003
  • 财政年份:
    2001
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Ion Scattering and Recoiling Spectroscopy for In Situ Monitoring of Semiconductor Surface Processes in Gas Phase Atmosphere
气相气氛中半导体表面过程原位监测的离子散射和反冲光谱技术的发展
  • 批准号:
    11305006
  • 财政年份:
    1999
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Surface Modification of Hydrogen-Terminated Silicon Substrate using Extra-Low Energy Electron Beam
使用超低能电子束对氢封端硅衬底进行表面改性
  • 批准号:
    09450017
  • 财政年份:
    1997
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Joint Study on Hydrogen-Mediated Epitaxy
氢介导外延联合研究
  • 批准号:
    08044146
  • 财政年份:
    1996
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems
结合经典方法开发新的氢分析方法及其在H/Si体系中的应用
  • 批准号:
    08555009
  • 财政年份:
    1996
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Ecology and Dynamics of Hydrogen at Semiconductor Surface
半导体表面氢的生态学和动力学
  • 批准号:
    07305049
  • 财政年份:
    1995
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Physics of Hetero-Epitaxial Growth onto the hydrogen terminated Si surface under the low temperature condition
低温条件下氢封端硅表面异质外延生长物理
  • 批准号:
    06402025
  • 财政年份:
    1994
  • 资助金额:
    $ 22.72万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
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