Microscopic Analysis of Surface Hydrogen and its Application to Nano-Fabrication Techniques
Microscopic Analysis of Surface Hydrogen and its Application to Nano-Fabrication Techniques
批准号:
10355002
负责人:
OURA Kenjiro
金额:
$22.72万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A).
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 2000
中文摘要
到目前为止,已经应用了几种表面分析技术来获得表面氢的平均信息。然而,为了开发由表面氢介导的纳米制造技术,期望建立一种可以分析驻留在表面上的局部氢的新方法。本研究计划的目的是在原子尺度上阐明局部驻留的表面氢的行为。为此,(A)我们将新引入的用于定量分析表面氢量的低能弹性反冲检测分析(LE-ERDA)与扫描隧道显微镜(STM)相结合。(B)使用新的设备,我们已经开发的本地驻留的表面氢的行为的理解,并试图将其应用到纳米制造技术介导的表面氢。值得特别提及的新发现如下。(1)在充分把握LE-ERDA获得的宏观信息与STM获得的微观信息之间的相关性的基础上,我们分析了氢介导的表面改性在表面局域引起的表面钝化、结构稳定、自组织等过程。特别是在氢诱导自组织方面,对于In/Si(100)、Al/Si(100)和Ag/6 H-SiC(0001)等金属/半导体表面,我们发现金属纳米团簇和特殊的氢终止表面相的形成依赖于初始表面结构。(2)基于上述结果,我们尝试了一种利用氢介导的表面改性工艺来进行表面局部区域的纳米制造。我们成功地对Si(100)4xl-H表面进行了STM图形化,并在氢提取区域发现了Si(100)c(8x 2)的特殊局部表面相,这些结果为更好地理解局部表面氢的行为提供了关键。
英文摘要
So far, several surface analytical techniques have been applied to obtain average information on surface hydrogen. However, in order to develop nano-fabrication techniques mediated by surface hydrogen, it is desired to establish a novel method that can analyze hydrogen residing locally on the surface. The purpose of this research project is to elucidate the behavior of locally residing surface hydrogen on atomic scale. For this purpose, (A) we have combined newly introduced low-energy elastic recoil detection analysis (LE-ERDA) for quantitative analysis of the amount of surface hydrogen with scanning tunneling microscopy (STM). (B) Using the new apparatus, we have developed understanding of the behavior of locally residing surface hydrogen, and attempted their application to nano-fabrication techniques mediated by surface hydrogen. The new findings worthy of special mention are as follows.(1) With a good grasp of correlation between macroscopic information obtained by LE-ERDA and microscopic information from STM, we analyzed several processes in surface local area induced by hydrogen-mediated surface modification such as surface passivation, structure stabilization, selforganization. In particular, as for the hydrogen-induced self-organization, for metal/semiconductor surfaces such as In/Si (100), Al/Si (100) and Ag/6H-SiC (0001), we found the formation of metal nano-clusters and the peculiar hydrogen-terminated surface phases dependent on the initial surface structure.(2) Based on the above results, we attempted a nano-fabrication of surface local area using hydrogenmediated surface modification processes. We aimed establishment of nano-fabrication processes using local hydrogen extraction by STM.We succeeded in the STM patterning of the Si (100) 4xl-H surface, and found the peculiar local surface phase of the Si (100) c (8x2) on the hydrogen extracted area.These results cause the key of better understanding o the behavior of locally residing surface hydrogen.
期刊论文(25)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
K. Oura 他 8他: "Analysis of surface structures through determination of their composition using-STM : Si(100) 4x3-In and Si(111)4x1-In"Physical Review. B60. 14372-14381 (1999)
K. Oura 等人 8 等人:“通过使用 STM 测定表面结构:Si(100) 4x3-In 和 Si(111)4x1-In”物理评论 B60。 1999)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
A.A.Saranin, V.G.Lifshits, M.Katayama and K.Oura: "Composition and Surface Structure of Quantum Chains on a In/Si (111) Surface"Jpn.J.Appl.Phys.. 39, No.4A. L306-L308 (2000)
A.A.Saranin、V.G.Lifshits、M.Katayama 和 K.Oura:“In/Si (111) 表面上量子链的组成和表面结构”Jpn.J.Appl.Phys.. 39,No.4A。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M.Katayama 他6名: "Adsorption of Atomic Hydrogen on Ag-Covered 6H-SiC(0001) Surface"Jpn.J.Appl.Phys.. 39. 4340-4342 (2000)
M.Katayama等6人:“Ag覆盖的6H-SiC(0001)表面上原子氢的吸附”Jpn.J.Appl.Phys.. 39. 4340-4342 (2000)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M.Katayama 他9名: "Adsorption of Atomic Hydrogen on the Si (001) 4x3-In Surface Studied by Coaxial Impact Collision Ion Scattering Spectroscopy and Scanning Tunneling Microscopy"J.Vac.Sci.Technol.. B17. 983-988 (1999)
M.Katayama 等 9 人:“通过同轴碰撞碰撞离子散射光谱和扫描隧道显微镜研究 Si (001) 4x3-In 表面上原子氢的吸附”J.Vac.Sci.Technol.. B17。 1999)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
片山光浩 他5名: "Ag/SiC(0001))表面上への原子状水素吸着過程のSTM観察"表面科学. 21. 398-404 (2000)
Mitsuhiro Katayama 等 5 人:“Ag/SiC(0001))表面原子氢吸附过程的 STM 观察”表面科学 21. 398-404 (2000)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 25 条
Synthesis of Carbon Nanotubes with Long Length and High Density and its Application to Nanodevices
-
批准号:16206004
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$32.2万
-
财政年份:2004
-
负责人:OURA Kenjiro
-
依托单位:
CONTROL OF CARBON NANOTUBE GROWTH USING SELF-ORGANIZED CATALYST NANOCLUSTERS AND ITS APPLICATION TO NANODEVICES
-
批准号:14205010
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$35.19万
-
财政年份:2002
-
负责人:OURA Kenjiro
-
依托单位:
Study on Growth Mechanism of Carbon Nanotubes Grown Using Self-Organized Catalyst Nanoclusters
-
批准号:13355003
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$33.95万
-
财政年份:2001
-
负责人:OURA Kenjiro
-
依托单位:
Development of Ion Scattering and Recoiling Spectroscopy for In Situ Monitoring of Semiconductor Surface Processes in Gas Phase Atmosphere
-
批准号:11305006
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$23.64万
-
财政年份:1999
-
负责人:OURA Kenjiro
-
依托单位:
Surface Modification of Hydrogen-Terminated Silicon Substrate using Extra-Low Energy Electron Beam
-
批准号:09450017
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.05万
-
财政年份:1997
-
负责人:OURA Kenjiro
-
依托单位:
Joint Study on Hydrogen-Mediated Epitaxy
-
批准号:08044146
-
项目类别:Grant-in-Aid for international Scientific Research
-
资助金额:$8.51万
-
财政年份:1996
-
负责人:OURA Kenjiro
-
依托单位:
Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems
-
批准号:08555009
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$13.06万
-
财政年份:1996
-
负责人:OURA Kenjiro
-
依托单位:
Ecology and Dynamics of Hydrogen at Semiconductor Surface
-
批准号:07305049
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$3.07万
-
财政年份:1995
-
负责人:OURA Kenjiro
-
依托单位:
Physics of Hetero-Epitaxial Growth onto the hydrogen terminated Si surface under the low temperature condition
-
批准号:06402025
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$22.91万
-
财政年份:1994
-
负责人:OURA Kenjiro
-
依托单位: