Ecology and Dynamics of Hydrogen at Semiconductor Surface

由于氢是最简单的元素，所以很难探测到氢原子，特别是当它们位于固体表面时。在目前的条件下，使用几种有限的方法，以碎片的方式独立地研究了表面氢的绝对数量、电子态、原子排列等性质，并在推理中讨论了表面氢的行为。本研究项目的目的是通过在专业实验方法和理论方面有成就的研究人员对表面氢的深入研究，阐明半导体表面的生态和动力学。在本课题中，随着研究人员的密切接触，我们通过结构分析、化学状态评价和理论计算等方法，研究了表面氢对金属原子和衬底硅原子在金属-硅浅层界面结构上原子氢吸附行为的影响。特别值得一提的是，我们研究了原子氢暴露诱导的In/Si（111）表面结构变化，发现基底Si原子自组织成由氢吸附诱导的特殊结构，并且强烈依赖于基底重建。

Since hydrogen is the most simple element, it is difficult to detect hydrogen atoms especially when they reside on solid surfaces. Under the present condition, using several limited methods, several properties of surface hydrogen such as absolute amounts, electronic states, atomic arrangements are independently investigated in a fragmentary manner, and the behavior of surface hydrogen is being discussed under inference. The purpose of this research project is to elucidate the ecology and dynamics at semiconductor surfaces by means of intensive studies on surface hydrogen conducted by researchers who have achievements on specialized experimental methods and theorists.In this research project, with getting in close touch between researchers, we have studied the influence of surface hydrogen on the behaviors of metal atoms and substrate silicon atoms at atomic hydrogen adsorption on the metal-silicon shallow interface structures by means of structure analysis, evaluation of chemical state, and theoretical calculation. The result worthy of special mention was that we have investigated the structural changes of the In/Si (111) surface induced by atomic hydrogen exposure and found that the substrate Si atoms ware self-organized to peculiar structures induced by adsorption of hydrogen with being strongly dependent on the substrate reconstruction.