Ecology and Dynamics of Hydrogen at Semiconductor Surface

点击翻译按钮获取中文摘要

Since hydrogen is the most simple element, it is difficult to detect hydrogen atoms especially when they reside on solid surfaces. Under the present condition, using several limited methods, several properties of surface hydrogen such as absolute amounts, electronic states, atomic arrangements are independently investigated in a fragmentary manner, and the behavior of surface hydrogen is being discussed under inference. The purpose of this research project is to elucidate the ecology and dynamics at semiconductor surfaces by means of intensive studies on surface hydrogen conducted by researchers who have achievements on specialized experimental methods and theorists.In this research project, with getting in close touch between researchers, we have studied the influence of surface hydrogen on the behaviors of metal atoms and substrate silicon atoms at atomic hydrogen adsorption on the metal-silicon shallow interface structures by means of structure analysis, evaluation of chemical state, and theoretical calculation. The result worthy of special mention was that we have investigated the structural changes of the In/Si (111) surface induced by atomic hydrogen exposure and found that the substrate Si atoms ware self-organized to peculiar structures induced by adsorption of hydrogen with being strongly dependent on the substrate reconstruction.