Ecology and Dynamics of Hydrogen at Semiconductor Surface

半导体表面氢的生态学和动力学

• 批准号: 07305049
• 负责人: OURA Kenjiro
• 金额: $ 3.07万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07305049/
• 关键词: surface hydrogen; ecology of hydrogen; ion beam; scanning tunneling microscopy; epitaxy

Since hydrogen is the most simple element, it is difficult to detect hydrogen atoms especially when they reside on solid surfaces. Under the present condition, using several limited methods, several properties of surface hydrogen such as absolute amounts, electronic states, atomic arrangements are independently investigated in a fragmentary manner, and the behavior of surface hydrogen is being discussed under inference. The purpose of this research project is to elucidate the ecology and dynamics at semiconductor surfaces by means of intensive studies on surface hydrogen conducted by researchers who have achievements on specialized experimental methods and theorists.In this research project, with getting in close touch between researchers, we have studied the influence of surface hydrogen on the behaviors of metal atoms and substrate silicon atoms at atomic hydrogen adsorption on the metal-silicon shallow interface structures by means of structure analysis, evaluation of chemical state, and theoretical calculation. The result worthy of special mention was that we have investigated the structural changes of the In/Si (111) surface induced by atomic hydrogen exposure and found that the substrate Si atoms ware self-organized to peculiar structures induced by adsorption of hydrogen with being strongly dependent on the substrate reconstruction.

由于氢是最简单的元素，因此很难检测到氢原子，特别是当它们位于固体表面时。在现有条件下，利用有限的方法，对表面氢的绝对量、电子态、原子排列等性质进行了零星的独立研究，并在推论下对表面氢的行为进行了讨论。本研究项目的目的是通过在专业实验方法和理论方面取得成就的研究人员对表面氢进行深入研究，阐明半导体表面的生态学和动力学。在本研究项目中，通过研究人员之间的密切联系，研究了表面氢对金属原子和衬底硅原子在金属表面吸附氢时的行为的影响，硅浅界面结构的结构分析、化学状态评估和理论计算。特别值得一提的是，我们研究了In/Si（111）表面原子氢暴露引起的结构变化，发现衬底Si原子自组织形成氢吸附引起的特殊结构，并强烈依赖于衬底重构。

项目成果

K.Oura 他3名: "Observation of the diffusion of Ag atoms throgh an a-Si layer on Si(111) by low energy ion scattering" Surf.Sci.363. 156-160 (1996)

K.Oura 和其他 3 人：“通过低能离子散射观察 Ag 原子通过 Si(111) 上的 a-Si 层的扩散”Surf.Sci.363 (1996)。

K. Oura 他4名: "Thin-film growth-mode anaoysis by low energy ion scattering" Surf. Sci.363. 161-165 (1996)

K. Oura 和其他 4 人：“低能离子散射的薄膜生长模式分析”Surf. 161-165 (1996)。

T. Takahagi 他4名: "Aluminum-selective chemical vapor deposition induced by hydrogen desorption on silicon" Jpn. J. Appl. Phys.35-2B. 1010-1013 (1996)

T. Takahagi 等 4 人：“硅上氢解吸引起的铝选择性化学气相沉积”J. Appl. 1010-1013 (1996)。

K. Oura 他3名: "Observation of the diffusion Ag atoms through an a-Si layer on Si (111) by low energy ion scattering" Surf. Sci.363. 156-160 (1996)

K. Oura 和其他 3 人：“通过低能离子散射观察 Ag 原子穿过 Si (111) 上的非晶硅层的扩散”Sci.363 (1996)。

H. Hongo 他4名: "New desorption state of D_2 from deuterium-terminated Si (100) by potassium adsorption" Surf. Sci.357-358. 698-702 (1996)

H. Hongo 和其他 4 人：“通过钾吸附从氘封端的 Si (100) 中获得 D_2 的新解吸状态”Sci.357-358 (1996)。