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Development of the computational method for determining the electronic structure of semi-infinite crystal surfaces

Development of the computational method for determining the electronic structure of semi-infinite crystal surfaces
确定半无限晶体表面电子结构的计算方法的发展
批准号:
08640430
负责人:
ISHIDA Hiroshi
金额:
$1.41万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1998

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中文摘要
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英文摘要
In this research program, we have developed a computer code that determines the ground-state electronic structure of semi-infinite crystal surfaces from first-principles. In doing so, the surface region is treated as a localized defect in the surface-normal direction, and the. one-electron Green function in the surface region is calculated with the use of the embedding technique of Inglesfield. The present computer code adopts norm-conserving pseudo-potentials to represent ion cores, and the Green function is expanded by a plane-wave-like basis set. Although the true embedding surface dividing the substrate and surface regions weaves in a complex way in order to avoid crossing the ion-cores where the potential is non-local, we have invented a new method that replaces this curvy embedding surface by an equivalent plane surface. In this method, there is no need to specify' the true curvy surface throughout all the computational procedure at all. Our method can evaluate not only the Green … More function but also one-electron wavefunctions appropriate for the semi-infinite surface geometry. At present, we aredeveloping and testing a computer code for calculating the electronic structure of three-dimensional periodic systems containing localized 2p and transition-metal atomic elements using the augmented plane wave (APW) basis set and also usingthe linearized APW basis set. With this code, it becomes possible to generate the embedding potential of semi-infinite transition metal substrates. As a concrete subject that cannot be treated with the standard repeating-slab-based computational methods, we investigatedsurface resistivity caused by the elastic scattering of conducting electrons at the surface. For this purpose, we derived a general expression of the surface resistivity that can be applicable to arbitrary semi-infinite metallic crystal surfaces. Our calculation for the low-index clean Al surfaces led to an apparently counter-intuitive result that the resistivity of the close-packed (111) surface is nearly 46 times larger than that of the more loosely packed (001) surface. The large difference between the two surfaces.can be attributed to the fact thatthe conduction electrons impinging on the (111) surface of foc crystals cannot be reflected in specular direction because of the lack of the reflection symmetrywith respect to the (111) crystalplane. Thus, all the conduction electrons change their velocity in the plane when they are incident on the (111) surface, thus contributing to the resistivity of the system. Less
期刊论文(13)
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会议论文
H.Ishida: "Surface resistivity of semi-infinite crystals" Phys.Rev.B57. 4140-4144 (1998)
H.Ishida:“半无限晶体的表面电阻率”Phys.Rev.B57。
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通讯作者:
H.Ishida and A.Liebsch: "Electronic excitations in alkali-metal overlayers.II.Effects of substitutional adsorption of Na/Al (001)" Phys.Rev.B57. 12558-12563 (1998)
H.Ishida 和 A.Liebsch:“碱金属覆盖层中的电子激发。II.Na/Al (001) 替代吸附的影响”Phys.Rev.B57。
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通讯作者:
H.Ishida and A.Liebsch: "Electronic excitations in alkali-metal overlayers. I. Unreconstructed low-temperature phase of Li/Al" Physical Review B. 57. 12550-12557 (1998)
H.Ishida 和 A.Liebsch:“碱金属覆盖层中的电子激发。I. Li/Al 的未重构低温相”物理评论 B. 57. 12550-12557 (1998)
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通讯作者:
H.Ishida: "Surface resitivity induced by isolated atoms and atomic clusters on metallic surfaces" Physical Review B. 54巻15号. 10905-10910 (1996)
H.Ishida:“金属表面上孤立原子和原子簇引起的表面电阻率”《物理评论 B》第 54 卷,第 15 期。10905-10910 (1996)
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通讯作者:
13
    First-principles calculation study of the long-range restructuring of noble-metal surfaces
    • 批准号:
      20K05333
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.25万
    • 财政年份:
      2020
    • 负责人:
      ISHIDA Hiroshi
    • 依托单位:
    An Exploration of Primary Odors That Enables Reproduction of Arbitrary Odors
    Theoretical calculation of the electronic structure of topological insulators
    • 批准号:
      24540328
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.5万
    • 财政年份:
      2012
    • 负责人:
      ISHIDA Hiroshi
    • 依托单位:
    Research on Development of the Rip Current Measuring System by using Acoustic Tomography
    海外基金