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First-principles calculation of the electronic structure of metal/insulator interfaces

First-principles calculation of the electronic structure of metal/insulator interfaces
金属/绝缘体界面电子结构的第一性原理计算
批准号:
20540320
负责人:
ISHIDA Hiroshi
金额:
$2.66万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010

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中文摘要
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英文摘要
We studied the electronic structure of metal/insulator interfaces by quantum mechanical calculations. In particular, to describe the Mott insulator arising from strong Coulomb interactions, we derived a method to apply dynamical mean-field theory to multilayer systems such as semi-infinite interfaces. By applying this method and also by incorporating interatomic correlation effects, we clarified how metallic states penetrate into the insulator layers at the metal/Mott insulator interface.
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会议论文
Correlation induced spin freezing transition in FeSe : A dynamical mean field theory
FeSe 中相关诱导的自旋冻结转变:动态平均场理论
DOI: --
发表时间: 2010
期刊: Physical Review B 82巻
影响因子: --
作者: [A.Liebsch, H.Ishida]
通讯作者: H.Ishida
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
DOI: 10.1103/physrevb.81.054513
发表时间: 2010-02-01
期刊: PHYSICAL REVIEW B
影响因子: 3.7
作者: [Ishida, Hiroshi, Liebsch, Ansgar]
通讯作者: Liebsch, Ansgar
Embedded Green-function approach for the calculation of surface electronic structure and electron transport through nanocontacts
用于计算表面电子结构和通过纳米接触的电子传输的嵌入式格林函数方法
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [松本祐介, 山岡洋也, 鶴町徳昭, 小柴俊, 伊藤寛, 中西俊介, 伊藤民武, V.P.Biju, 石川満, H.Ishida]
通讯作者: H.Ishida
7
    First-principles calculation study of the long-range restructuring of noble-metal surfaces
    • 批准号:
      20K05333
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.25万
    • 财政年份:
      2020
    • 负责人:
      ISHIDA Hiroshi
    • 依托单位:
    An Exploration of Primary Odors That Enables Reproduction of Arbitrary Odors
    Theoretical calculation of the electronic structure of topological insulators
    • 批准号:
      24540328
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.5万
    • 财政年份:
      2012
    • 负责人:
      ISHIDA Hiroshi
    • 依托单位:
    Research on Development of the Rip Current Measuring System by using Acoustic Tomography
    海外基金