Marangoni convection in the melt during crystal growth of compound semiconductor under Microgravity

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In this study, the main purpose is to clarify and to control Marangoni convection in the melt during crystal growth of compound semiconductor under Microgravity condition.We used Indium-Antimony as a test sample, and carried out the crystal growth of it using Horizontal Bridgman method under normal gravity and under various gravity field during parabolic flight. We also carried out the numerical simulation to compare with experimental results.We clarified that there are two cases of flow in the melt. One is flow directions of solutal and thermal Marangoni convections are the same (acceleration case), the other is flow directions are the opposite (deceleration case). Especially in deceleration case, flow direction during crystal growth was from hot side to cold side (crystal-melt interface) on the melt. This result was different from the result of thermal Marangoni and buoyancy convection. It means that solutal Marangoni and buyancy convection are dominant flow in the melt. Moreover, from the results under various gravity field, solutal Marangoni convection is more dominant than solutal buoyancy convection. Numerical simulation also showed the same experimanetal results.