Marangoni convection in the melt during crystal growth of compound semiconductor under Microgravity

为了明确晶体取向对溶解和生长过程的依赖性，我们利用中国返回式卫星上的GaSb (111) A-InSb-GaSb (111) B夹层样品在微重力和正常重力下进行了In-Ga-Sb晶体生长。所得结果为：(1)两种样品中（111）B平面的GaSb在in - sb熔体中的溶解量均大于（111）A平面；(2)在地球处理的样品中，InGaSb的再结晶区向重力方向展宽，且由于重力作用，in向in - ga - sb溶液底部区域下移，GaSb的溶解量较大；(3)空间样品中没有发生重力偏析。

To clarify the dependency of dissolution and growth processes on the crystal orientation, we carried out the In-Ga-Sb crystal growth using GaSb (111) A-InSb-GaSb (111) B sandwich samples under microgravity by the Chinese Recoverable Satellite and also under normal gravity.The obtained results are ;(1) GaSb with the (111) B plane dissolved in an In-Sb melt much more than the (111) A plane in both samples,(2) the re-crystallized zone of InGaSb broadened toward gravitational direction in the sample processed on earth and a larger disolution of GaSb took place as In moved downward the bottom region of In-Ga-Sb solution due to gravity,(3) the gravitational segregation did not occur in the space sample.