Marangoni convection in the melt during crystal growth of compound semiconductor under Microgravity

微重力下化合物半导体晶体生长过程中熔体中的马兰戈尼对流

• 批准号: 08044175
• 负责人: HIRATA Akira
• 金额: $ 3.2万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08044175/
• 关键词: Microgravity; Single crystal growth; Compound semiconductor; Marangoni convection; Dissolution; Crystal orientation; Optical devices; Recoverable satellite; 面方位依存性

To clarify the dependency of dissolution and growth processes on the crystal orientation, we carried out the In-Ga-Sb crystal growth using GaSb (111) A-InSb-GaSb (111) B sandwich samples under microgravity by the Chinese Recoverable Satellite and also under normal gravity.The obtained results are ;(1) GaSb with the (111) B plane dissolved in an In-Sb melt much more than the (111) A plane in both samples,(2) the re-crystallized zone of InGaSb broadened toward gravitational direction in the sample processed on earth and a larger disolution of GaSb took place as In moved downward the bottom region of In-Ga-Sb solution due to gravity,(3) the gravitational segregation did not occur in the space sample.

为了研究In-Ga-Sb晶体的溶解和生长过程对晶体取向的依赖性，我们在微重力和正常重力条件下，用中国返回式卫星上的GaSb（111）A-InSb-GaSb（111）B夹心样品进行了In-Ga-Sb晶体的生长，得到的结果是：（1）在两种样品中，具有（111）B面的GaSb比具有（111）A面的GaSb更多地溶解在In-Sb熔体中，（2）重新--在地球上处理的样品中，InGaSb的结晶带向重力方向变宽，GaSb发生较大的溶解，由于重力作用，In-Ga-Sb固溶体底部区域向下移动;（3）空间样品中未发生重力偏析。

项目成果

A.Hirata,M.Sakurai,N.Ohishi: "Transition Process from Laminar To Oscillatory Marangoni Convection in a Liquid Bridge under Normal and Micro Gravity" J.Jpn.Soc.Microgravity Appl.14・2(掲載決定). (1997)

A.Hirata、M.Sakurai、N.Ohishi：“正常和微重力下液桥中从层流到振荡马兰戈尼对流的过渡过程”J.Jpn.Soc.Microgravity Appl.14・2（出版）（1997 年）。

S.Nakamura,T.Hibiya,K.Kakimoto,N.Imaishi,S.Nishizawa,A.Hirata,K.Mukai,S.Yoda,T.Morita: "Measurement of Temperature Fluctuations in Marangoni Convection in a Half-zone Silicon Melt on Board the TR-IA-4 Rocket" J.Jpn.Soc.Microgravity Appl.14・1. 60-66 (1997)

S.Nakamura,T.Hibiya,K.Kakimoto,N.Imaishi,S.Nishizawa,A.Hirata,K.Mukai,S.Yoda,T.Morita：“半区硅中马兰戈尼对流温度波动的测量TR-IA-4 火箭上的熔化”J.Jpn.Soc.Microgravity Appl.14・1.60-66 (1997)

A.Hirata et al.: "Numerical Simulation of Mixing of Semiconductor Melts" Bulletin of the Centre for Infomatics,Waseda Univ.21. 35-40 (1997)

A.Hirata 等人：“半导体熔体混合的数值模拟”早稻田大学信息学中心公告21。

A.Hirata,K.Arafune,T.Akiyama,N.Imaishi,S.Yasuhiro: "Numerical Simulation of Mixing of Semiconductor Melts" Bulletin of the Centre for Infomatics,Waseda Univ.21・35(in press). (1997)

A.Hirata、K.Arafune、T.Akiyama、N.Imaishi、S.Yasuhiro：“半导体熔体混合的数值模拟”早稻田大学信息学中心公告21・35（出版中）（1997）。

桜井誠人,大石直哉,平田彰: "液柱内振動マランゴニ対流に及ぼす液柱形状の影響" 第13回宇宙利用シンポジウム. 195-198 (1996)

Masato Sakurai、Naoya Oishi、Akira Hirata：“液柱形状对液柱内振荡马兰戈尼对流的影响”第 13 届空间应用研讨会 195-198（1996）。