New Protium Function

新 Protium 功能

• 批准号: 10148106
• 负责人: HAYASHI Yasunori
• 金额: $ 43.39万
• 依托单位: Kyushu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas (A)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10148106/
• 关键词: protium; hydrogen; transparent conductor; oxide; nitride; proton conduction; strain super lattice; low dimensional super structure; エネルギーバンド構造; 光電気化学; ヘリコンスパッタ; カソードルミネッセンス

In order to develop a new function of materials induced by hydrogen incorporation, thin films of nitrides, oxides and metal multilayers were investigated in relation to the optical and electrical properties. Investigations on proton conduction at middle-high temperatures were also carried out in strained super lattice films and low-dimensional artificial structures of perovskite type oxides.The effects of hydrogen incorporation on electrical conduction of AlN and CuN were appeared differently depending on the difference in the stoichiometry of the nitrides. Electrical conductivities of Sn and Ge mixed oxides and ZnO films were increased more than 4 orders of magnitude without loosing their transparency for visible light.Strain distribution in super-structures of SrCeO_3/SrZrO_3 modifies the proton conduction. The mutual distance between oxide ions around a proton was revealed to be a critical factor for the proton conduction. Nano-scale 2 dimensional structures of perovskite type oxides were fabricated for further investigation of proton conduction at the interface between electrodes and solid electrolytes.

为了开发氢诱导材料的新功能，研究了氮化物、氧化物和金属多层膜的光学和电学性质。研究了应变超晶格薄膜和低维钙钛矿型氧化物人工结构中的中高温质子导电性，发现掺氢对AlN和CuN导电性的影响因氮化物化学计量比的不同而不同。Sn、Ge混合氧化物和ZnO薄膜的电导率在不降低可见光透过率的情况下提高了4个数量级以上，SrCeO_3/SrZrO_3超结构中的应变分布改变了质子导电性。质子周围的氧离子之间的相互距离被揭示是质子传导的关键因素。制备了钙钛矿型氧化物的纳米二维结构，用于进一步研究电极与固体电解质界面处的质子传导。

项目成果

M.Arita: "Effects of Hydrogen Introduction on Electrical and Optical Properties of Cd-doped Ge Oxide and Zn Oxide Thin Films"The Fourth Pacific Rim Proceedings of International Conference on Advanced Materials and Processing. PRICM4. 2841-2844 (2001)

M.Arita：“氢气引入对掺镉氧化锗和氧化锌薄膜电学和光学性能的影响”第四届环太平洋先进材料与加工国际会议论文集。

Y. Hayashi: "Modification of Electrical Properties of Metal Oxide and Thin Films by Protium Inclusion"Progress In Hydrogen Treatment of Materials, Donetsk-2001-Coral Gables. 67-72 (2001)

Y. Hayashi：“通过氕夹杂物改变金属氧化物和薄膜的电性能”材料氢处理进展，Donetsk-2001-Coral Gables。

H. Yugami: "Fabrication of proton conductors with nano-structured surface by alumina membrane mask"Solid State Ionics. 154-155. 693-697 (2002)

H. Yugami：“通过氧化铝膜掩模制造具有纳米结构表面的质子导体”固态离子学。

石川努: "Cu-N薄膜の電気特性に及ぼす水素注入の効果"水素エネルギーシステム. 25・1. 24-28 (2000)

Tsutomu Ishikawa：“氢注入对 Cu-N 薄膜电性能的影响”25・1（2000 年）。

T.Ishikawa: "Effect of Hydrogen Implantation on the Electrical Properties of Cu-N Thin Films"Proceedings of the 5th Korea-Japan Joint Sumposium '99 on Hydrogen Energy. 174-180 (1999)

T.Ishikawa：“氢注入对 Cu-N 薄膜电性能的影响”第五届韩日氢能联合研讨会 99 论文集。