Real tine characterization and control of growing interface structures of thin films

薄膜生长界面结构的实时表征和控制

基本信息

  • 批准号:
    10450317
  • 负责人:
  • 金额:
    $ 7.81万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 1999
  • 项目状态:
    已结题

项目摘要

1. Instrumentation of real time X-ray Photoelectron Diffraction (XPED) AnalysisFor real time measurements of interface structures, reactions and growth by XPED, the improvement of our XPED-MBE chamber was carried out. The new manipulator and transfer rods system enables the XPED measurements at from 77K to about 1300K with the precise rotation.2. Development of novel theory to investigate interface structures ; Tensor XPED and Photoelectron HolographyTo investigate interface structures precisely, novel theory of tensor XPED and Photoelectron Holography were developed. Using these schemes, theoretical XPED patterns of Cu/Ge (111) systems were investigated.3. Interface structure of Cu/Ge (111) systems (Interface structure and alloy formation of discommensurate system)The structure of discommensurate domain Cu Layer on Ge (111)-c (2x8) surface was studied by X-ray Photoelectron Diffraction (XPED). It turned out that Cu forms the double layer structure in the discommensurate domain at the initial stage of epitaxy and 0.6Å relaxation of outermost Cu layer occurs. Alloy formation in the interface between Cu an Ge layers was also investigate.4. Design and Instrumentation of real time XPED detection systems for measurements of interface reactionTo investigate interface reactions precisely and real time, conventional plot-by-plot XPED measurements is not adequate. Thus, theoretical and experimental study on 2 dimensional simultaneous detection of the polar angle and energy distributions was performed. Theoretical design of new type input lens system with a high through put was also carried out.
1.真实的实时X射线光电子衍射(XPED)分析仪器化为了利用XPED对界面结构、反应和生长进行真实的实时测量,我们对XPED-MBE室进行了改进。新的机械手和转移棒系统使XPED测量从77 K到约1300 K的精确旋转。研究界面结构的新理论的发展;张量XPED和光电子全息术为了精确研究界面结构,发展了张量XPED和光电子全息术的新理论。利用这些方案,研究了Cu/Ge(111)体系的理论XPED图. Cu/Ge(111)系统的界面结构(非公度系统的界面结构和合金形成)用X射线光电子衍射(XPED)研究了Ge(111)-c(2 × 8)表面非公度畴Cu层的结构。结果表明,在外延初期,Cu在非公度畴内形成双层结构,最外层Cu层发生0.6 μ m的弛豫。研究了Cu和Ge层界面合金的形成.真实的XPED界面反应实时检测系统的设计和仪器化为了精确和真实的研究界面反应,传统的逐图XPED测量是不够的。为此,本文对极角和能量分布的二维同时探测进行了理论和实验研究。并对新型高通量输入透镜系统进行了理论设计。

项目成果

期刊论文数量(28)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Shinji Omori: "Disappearance of Element-Specific Kikuchi Bands from Fluoride Surfaces"J. Vac. Sci. Technol.. A17. 1626-1629 (1999)
Shinji Omori:“氟化物表面元素特异性菊池带的消失”J。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Susumu Shiraki: "Measurements A Auger Electron Diffraction by Using Electrostatic Analyzer with Simultaneous Detection of Energy and Angle Distribution"Hyomen Kagaku. 20 (in Japanese). 452-457 (1999)
Susumu Shiraki:“使用静电分析仪测量俄歇电子衍射,同时检测能量和角度分布”Hyomen Kagaku。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Taknori Suzuki: "Photoelectron Diffraction Intensity Calculation by Using Tensor LEED Theory"Surf. Sci. Lett.. 440. 881-886 (1999)
Taknori Suzuki:“利用张量 LEED 理论进行光电子衍射强度计算”冲浪。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Shinji Omori: "Disappearance of Element-Specific Kikuchi Bands from Fluoride Surfaces"Journal of Vacuum Science and Technology. A17. 1625-1629 (1999)
Shinji Omori:“氟化物表面元素特异性菊池带的消失”真空科学与技术杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Shinji Omori: "Photoelectron Diffraction Intensity Calculation by Using Tensor LEED Theory"J. Vac. Sci. Technol.. A17. 1621-1625 (1999)
大森真司:“利用张量LEED理论计算光电子衍射强度”J.
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

NIHEI Yoshimasa其他文献

NIHEI Yoshimasa的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('NIHEI Yoshimasa', 18)}}的其他基金

Development of nano-scale three-dimensional analytical apparatus for industrial material using an ultra fine focused ion beam
使用超细聚焦离子束开发工业材料纳米级三维分析装置
  • 批准号:
    11555226
  • 财政年份:
    1999
  • 资助金额:
    $ 7.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Comprehensive Research on Next Generation of Analytical Methodology for Environmental Protection
下一代环境保护分析方法的综合研究
  • 批准号:
    08308034
  • 财政年份:
    1996
  • 资助金额:
    $ 7.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Three-Dimensional Microanalysis usig Ion and Electron Dual Focused Beams
使用离子和电子双聚焦束进行三维微量分析的发展
  • 批准号:
    06555254
  • 财政年份:
    1994
  • 资助金额:
    $ 7.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Novel Electron Spectrometer for Simultaneous Detection of Energy and Angular Distributions
开发同时检测能量和角分布的新型电子能谱仪
  • 批准号:
    61850138
  • 财政年份:
    1986
  • 资助金额:
    $ 7.81万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research
Development of High Performance System for the Direct Measurements of Photoelectron Diffraction Patterns
开发用于直接测量光电子衍射图案的高性能系统
  • 批准号:
    58850160
  • 财政年份:
    1983
  • 资助金额:
    $ 7.81万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了