Development of nano-scale three-dimensional analytical apparatus for industrial material using an ultra fine focused ion beam

使用超细聚焦离子束开发工业材料纳米级三维分析装置

• 批准号: 11555226
• 负责人: NIHEI Yoshimasa
• 金额: $ 8.83万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555226/
• 关键词: Ultra fine ion beam; Gallium focused ion beam; Secondary ion mass spectrometry; Nano-scale tree-dimensional analysis; Elemental analysis with high spatial resolution; Multi-elements detection; Analytical reliability; High accurate cross-sectioning

In this project, we tried the development of analytical technique and apparatus, for a nano-scale three-dimensional analysis. For this development, it is needed to develop and make clear the several items as follows ;(1) Development of an ultra fine ion beam (primary ion beam), whose diameter is several nano-meter,(2) Development of a stability beam scanning technique during long time measurements,(3) Development of a high accurate data system for three-dimensional analysis,(4) Clarify the shape and chemical composition of the cross-section by a gallium focused ion beam (Ga-FIB)Items of 1 and 2 : We developed the ultra fine ion beam (primary ion beam) and a stability beam scanning system. By using the developed secondary ion mass spectrometry (SIMS) apparatus, we obtained the ion induced secondary electron image of a vacuum-evaporation gold film on a carbon prate. Judging from these results, it was clear that the lateral resolution of this system was less than 10 nm. Thus, we can concl … More ude that the three-dimensional analysis with high spatial resolution was realized by using this apparatus.Item of 3 : The high accurate data system is very important for the tree-dimensional analysis as a destructive local analysis. We have investigated the cause of an uncertainty in the SIMS analysis. From the experiments, the uncertainty based on a single-channel detection system, which was the composite uncertainty based on the reproducibility of the magnetic field and the changes of the analyzed surface with time, was calculated to be 12.1%〜19.1%. Thus, we conclude that the multi-elements measurement system improves the analytical reliability by 12.1%〜19.1%.Item of 4 : In order to clarify the shape of a cross-section by using a Ga-FIB, the computer simulations of cross-sectioning process were performed. The simulation revealed that the shape depend on a beam diameter and current density, and the cross-sectioning speed. We conclude that an ultra fine ion beam is effective for obtaining the accurate cross-section. Less

在本项目中，我们尝试开发分析技术和仪器，进行纳米级的三维分析。为此，需要开发和明确以下几项内容：(1)开发直径为几纳米的超细离子束(初级离子束)，(2)开发长时间测量中的稳定束扫描技术，(3)开发用于三维分析的高精度数据系统，(4)通过聚焦镓离子束(Ga-FIB)项目1和2澄清截面的形状和化学成分：我们开发了超细离子束(初级离子束)和稳定束扫描系统。利用研制的二次离子质谱仪(SIMS)，我们获得了碳板上真空蒸发金膜的离子诱导二次电子图像。结果表明，该体系的横向分辨率小于10 nm。因此，我们可以控制…并利用该仪器实现了高空间分辨率的三维分析。项目三：高精度的数据系统对于作为破坏性局部分析的树维分析非常重要。我们已经调查了SIMS分析中不确定的原因。通过实验，计算出单通道检测系统的不确定度为12.1%~19.1%，即基于磁场重现性和被分析表面随时间变化的合成不确定度。因此，多元素测量系统的分析可靠性提高了12.1%~19.1%。为了利用Ga-FIB确定截面的形状，对截面过程进行了计算机模拟。模拟结果表明，这种形状与束流直径、电流密度和横截面速度有关。我们得出结论，超细离子束是获得精确截面的有效方法。较少

项目成果

M.Nojima,B.Tomiyasu,T.Shibata,M.Owari and Y.Nihei: "Development of nano-scale FIB SIMS apparatus"Proceeding of international union of microbeam analysis societies IUMAS 2000. 343-344 (2000)

M.Nojima、B.Tomiyasu、T.Shibata、M.Owari 和 Y.Nihei：“纳米级 FIB SIMS 装置的开发”国际微束分析学会联合会 IUMAS 会议记录 2000. 343-344 (2000)

B.Tomiyasu, S.Sakasegawa, T.Toba, M.Owari and Y.Nihei: "Shave-off depth profiling of multi-layer samples using a gallium focused ion beam SIMS"Secondary ion mass spectrometry SIMS XII. 473-476 (2000)

B.Tomiyasu、S.Sakasekawa、T.Toba、M.Owari 和 Y.Nihei：“使用镓聚焦离子束 SIMS 对多层样品进行剃除深度分析”二次离子质谱 SIMS XII。

B.Tomiyasu, M.Owari and Y.Nihei: "Highly reliable quantitative analysis with Ga-FIB SIMS measurement by simultaneous multi-element detection system"Proceeding of international union of microbeam analysis societies IUMAS 2000. 345-346 (2000)

B.Tomiyasu、M.Owari 和 Y.Nihei：“通过同步多元素检测系统使用 Ga-FIB SIMS 测量进行高度可靠的定量分析”国际微束分析学会联合会 IUMAS 会议记录 2000. 345-346 (2000)

冨安,野島,坂本,尾張,二瓶: "ガリウム収束イオンビーム二次イオン質量分析法を用いた材料分析"第3回分析化学東京シンポジウム分析機器展招待ポスター講演要旨集. 194 (1999)

Tomiyasu、Nojima、Sakamoto、Owari、Nihei：“使用镓聚焦离子束二次离子质谱法进行材料分析”第三届东京分析化学和分析仪器研讨会邀请海报演讲摘要 194（1999 年）。

B.Tomiyasu,S.Sakasegawa,T.Toba,M.Owari and Y.Nihei: "Shave-off depth profiling of multi-layer samples using a gallium focu ion beam SIMS"Secondary ion mass spectrometry SIMS XII. 473-476 (2000)

B.Tomiyasu、S.Sakasekawa、T.Toba、M.Owari 和 Y.Nihei：“使用镓聚焦离子束 SIMS 对多层样品进行剃除深度分析”二次离子质谱 SIMS XII。