Study for adhesion analysis of resist pattern of 0.1μm line-width by using atomic force microscope tip

原子力显微镜针尖对0.1μm线宽光刻胶图形附着力分析研究

• 批准号: 10650332
• 负责人: KAWAI Akira
• 金额: $ 2.05万
• 依托单位: Nagaoka University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650332/
• 关键词: Adhesion; Integrated Circuit of Semiconductor; Atomic force microscope; Resist; Surface energy; Finite element method; Lithography; Solid Surface; 光リソグラフィー; フォトレジストパターン; 有限要素法; 摩擦力; 凝集破壊; ファンデルワールスカ

In the 21^<st> century, micro and nanofabrication technique has become important to realize electronic micro devices such as high density memory and liquid crystal display. In the lithography process, particularly, photoresist is regarded as an important mask material for dry or wet etching processes. However, improvement of the adhesion strength of the resist micropattern has been recognized as one serious problem to be solved, because the pattern collapse during water rinsing in the pattern development process occurs drastically due to Laplace force. In these days, various studies on adhesive phenomena of photoresist material have been accomplished by several researchers. A great deal of effort has been made on monitoring the adhesive property. What seems to be lacking, however, is quantitative and direct analysis physically. Meanwhile, with the invention of the atomic force microscope (AFM), we have been equipped in good time with the appropriate tools to understand the physical pro … More perties of condensed matter on a nanometer scale. As mentioned above, with the increasing degree of miniaturization in microelectronics, we unquestionably become confronted with structures of matter on a scale below 100 nm. In this regard, the investigator has already proposed the novel principle for direct analysis method for resist pattern adhesion, that is, direct peeling with the AFM tip (DPAT). In this study, by this method, the dependency of the load for collapse of the resist micropattern on heating temperature and linewidth are shown. Understanding these collapse property is of crucial importance for development not only microelectronic device but device in nanometer scale. Moreover, collapse and fracture mechanism of the resist line-pattern of 100 nm width formed by the KrF-excimer laser lithography are characterized by the DPAT method. Particularly, loading position dependency of pattern collapse and fracture mechanism are mainly focused. The DPAT method in this study can be applied to an ArF resist pattern, electron beam and synchrotron radiation resist patterns less than 70nm in width. Moreover, this technique will give useful information to other fields, for example, condensation control of micro particles and structural design for micro machine and so on. Less

在21^<st>世纪中，微型和纳米化技术对于实现电子微设备（例如高密度记忆和液晶显示屏）已经变得很重要。在光刻过程中，特别是光孔被认为是干燥或湿蚀刻过程的重要面膜材料。然而，抗抗微图案的粘合强度的提高已被认为是要解决的一个严重问题，因为在模式发育过程中，水冲洗过程中的模式崩溃是由于拉普拉斯力而发生的。如今，几位研究人员已经完成了有关光孔材料的粘合剂现象的各种研究。在监视粘合剂上已经付出了巨大的努力。但是，似乎缺乏的是定量和直接分析。同时，出于原子力显微镜（AFM）的意图，我们已经在适当的工具中配备了适当的工具，可以理解物理pro……在纳米尺度上更多地凝结物质。如上所述，随着微电子学的微型化程度的提高，我们无疑会在100 nm以下的规模上面对物质结构。在这方面，研究者已经提出了抗抗模式粘附的直接分析方法的新原理，即与AFM尖端（DPAT）直接剥离。在这项研究中，通过这种方法，显示了载荷对加热温度和线宽的载荷的依赖性。了解这些崩溃特性对于开发不仅是微电子设备，而且在纳米尺度上的设备至关重要。此外，由KRF-EXCIMER激光光刻形成的100 nm宽度的抗逆线形图的崩溃和断裂机理的特征是DPAT方法。特别是，模式塌陷和断裂机制的负载位置依赖性主要集中在集中。本研究中的DPAT方法可以应用于ARF抗抗模式，电子束和同步辐射电阻模式的宽度小于70nm。此外，该技术将为其他字段提供有用的信息，例如，微颗粒的缩合控制和微型机器的结构设计等。较少的

项目成果

Akira Kawai, Norio Moriike: "Adhesion and Cohesion Analysis of ArF/SOR Resist Patterns with Microtip of Atomic Force Microscope (AFM)"J.Photopolymer Science. and Technology. 14(in press). (2001)

Akira Kawai、Norio Moriike：“利用原子力显微镜 (AFM) 微尖对 ArF/SOR 抗蚀剂图案进行粘附和内聚分析”J.Photopolymer Science。

河合 晃: "原子力顕微鏡による表面特性の解析"日本接着学会誌. 36(2)(印刷中). (2000)

Akira Kawai：“使用原子力显微镜分析表面特性”日本粘合协会杂志 36(2)（印刷中）。

Akira Kawai: "Adhesion analysis of Micro Condensed Material by Atomic Force Microscope"Adhesion. 44. 16-25 (2000)

Akira Kawai：“原子力显微镜对微凝聚态材料的粘附力分析”粘附力。

A.Kawai,K.Shimada, E.Andoh: "Dependency of Micro Particle Adhesion of Dispersive and Nondispersive Interactions Analyzed by Atomic Force Microscopy"Solid State Phenomena. 65〜66. 191-194 (1999)

A.Kawai、K.Shimada、E.Andoh：“通过原子力显微镜分析的分散和非分散相互作用的微粒粘附依赖性”固态现象 65-66 (1999)。

Akira Kawai,Kiyoshi Shimada and Eiichi Andoh.: "Dependency of Micro Particle Adhesion of Dispersive and Nondispersive Interactions Analyzed by Atomic Force Microscopy"Solid State Phenomena. 65. 191-194 (1999)

Akira Kawai、Kiyoshi Shimada 和 Eiichi Andoh.：“原子力显微镜分析的分散和非分散相互作用的微粒粘附依赖性”固态现象。