Study for adhesion analysis of resist pattern of 0.1μm line-width by using atomic force microscope tip

21世纪以来，微纳米技术已成为实现高密度存储器、液晶显示等电子微器件的重要手段。特别是在光刻工艺中，光刻胶被认为是干式或湿式蚀刻工艺的重要掩模材料。然而，由于在图案显影过程中，由于拉普拉斯力的作用，图案在水冲洗过程中会发生剧烈的坍塌，因此提高抗蚀剂微图案的附着强度是一个亟待解决的问题。近年来，一些研究者对光刻胶材料的粘附现象进行了各种各样的研究。对胶粘剂性能的监测已经做了大量的工作。然而，似乎缺乏的是定量和直接的物理分析。同时，原子力显微镜（AFM）的发明，为我们在纳米尺度上了解凝聚态物质的物理性质提供了合适的工具。如上所述，随着微电子技术小型化程度的提高，我们毫无疑问会遇到100纳米以下尺度的物质结构。在这方面，研究者已经提出了一种新的直接分析方法的原理，即用AFM尖端直接剥离（DPAT）。在本研究中，通过这种方法，显示了抗蚀微图案崩溃的载荷与加热温度和线宽的关系。了解这些坍缩特性不仅对微电子器件的开发，而且对纳米级器件的开发都具有重要意义。此外，利用DPAT方法表征了krf准分子激光光刻形成的100nm宽抗蚀线图案的坍塌和断裂机理。重点研究了模式坍塌的加载位置依赖性和断裂机理。本研究的DPAT方法可应用于宽度小于70nm的ArF抗蚀图、电子束抗蚀图和同步辐射抗蚀图。此外，该技术还将为微粒子的凝结控制和微机械的结构设计等领域提供有用的信息。少

In the 21^<st> century, micro and nanofabrication technique has become important to realize electronic micro devices such as high density memory and liquid crystal display. In the lithography process, particularly, photoresist is regarded as an important mask material for dry or wet etching processes. However, improvement of the adhesion strength of the resist micropattern has been recognized as one serious problem to be solved, because the pattern collapse during water rinsing in the pattern development process occurs drastically due to Laplace force. In these days, various studies on adhesive phenomena of photoresist material have been accomplished by several researchers. A great deal of effort has been made on monitoring the adhesive property. What seems to be lacking, however, is quantitative and direct analysis physically. Meanwhile, with the invention of the atomic force microscope (AFM), we have been equipped in good time with the appropriate tools to understand the physical pro … More perties of condensed matter on a nanometer scale. As mentioned above, with the increasing degree of miniaturization in microelectronics, we unquestionably become confronted with structures of matter on a scale below 100 nm. In this regard, the investigator has already proposed the novel principle for direct analysis method for resist pattern adhesion, that is, direct peeling with the AFM tip (DPAT). In this study, by this method, the dependency of the load for collapse of the resist micropattern on heating temperature and linewidth are shown. Understanding these collapse property is of crucial importance for development not only microelectronic device but device in nanometer scale. Moreover, collapse and fracture mechanism of the resist line-pattern of 100 nm width formed by the KrF-excimer laser lithography are characterized by the DPAT method. Particularly, loading position dependency of pattern collapse and fracture mechanism are mainly focused. The DPAT method in this study can be applied to an ArF resist pattern, electron beam and synchrotron radiation resist patterns less than 70nm in width. Moreover, this technique will give useful information to other fields, for example, condensation control of micro particles and structural design for micro machine and so on. Less