Study of line edge roughness (LER) reduction in 15nm scale gate pattern

在本研究中，利用原子力显微镜(AFM)对聚合物聚集体在抗蚀剂微图形中的凝聚进行控制，以阐明线条边缘粗糙度(LER)机理。聚合物集合体的凝聚对抗蚀剂花纹侧壁LER的降低有很大影响。从抗蚀剂图形粘合的DPAT(使用AFM针尖直接剥离)结果来看，图形底部的聚合物聚集体凝聚是一个重要的控制因素。侵彻实验表明，抗蚀剂-衬底界面的稳定性有类似的趋势。在这一点上，聚合物聚集体表面的Zeta电位在图形形成过程中会影响抗蚀剂图形的LER控制。综上所述，在本研究中，指出了减小15 nm抗蚀剂图形LER的重要设计原则。

In this study, the condensation control of polymer aggregate in resist micro pattern is carried out in order to clarify the LER(line edge roughness) mechanism by using an atomic force microscope (AFM). The condensation of polymer aggregate affects strongly to the decrease of LER in resist pattern side-wall. From the DPAT (direct peeling by using AFM tip) results of resist pattern adhesion, the polymer aggregate condensation at the pattern bottom is one important control factor. The intrusion experiments indicate similar tendency of resist-substrate interface stability. In this regard, Zeta-potential of polymer aggregate surface should affect to LER control of resist pattern during pattern development. In conclusion, in this study, the important design rules in LER decrease of resist pattern of 15nm size are indicated.