Study of line edge roughness (LER) reduction in 15nm scale gate pattern

在这项研究中，抗蚀剂微图案中的聚合物聚集体的冷凝控制进行，以澄清LER（线边缘粗糙度）的机制，通过使用原子力显微镜（AFM）。聚合物聚集体的凝聚对光刻胶侧壁LER的降低有很大的影响。从抗蚀剂图案粘附的DPAT（使用AFM针尖直接剥离）结果来看，图案底部的聚合物聚集体凝聚是一个重要的控制因素。抗蚀剂-衬底界面稳定性的侵入实验表明类似的趋势。在这方面，聚合物聚集体表面的Zeta电位应影响图案显影期间抗蚀剂图案的LER控制。总之，在这项研究中，重要的设计规则，在LER降低的抗蚀剂图案的15纳米尺寸的指示。

In this study, the condensation control of polymer aggregate in resist micro pattern is carried out in order to clarify the LER(line edge roughness) mechanism by using an atomic force microscope (AFM). The condensation of polymer aggregate affects strongly to the decrease of LER in resist pattern side-wall. From the DPAT (direct peeling by using AFM tip) results of resist pattern adhesion, the polymer aggregate condensation at the pattern bottom is one important control factor. The intrusion experiments indicate similar tendency of resist-substrate interface stability. In this regard, Zeta-potential of polymer aggregate surface should affect to LER control of resist pattern during pattern development. In conclusion, in this study, the important design rules in LER decrease of resist pattern of 15nm size are indicated.