Optical property improvement of the semipolar GaN on Si by the reduction of stacking faults or point defects.

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We made semi-polar GaN on etched Si substrate by selective MOVPE method. In the case of (11-22)GaN, we succeeded the high quality GaN of which dislocation density is less than 10^5/cm^2. In the case of (1-101)GaN, since the dislocation was vended at the initial growth, it did not propagate to the surface of the GaN crystal. As a result, we also achieved the dislocation density of less than10^5/cm^2on this face. We tested the optical property of high quality semi-polar (1-101)GaN. We grew InGaN/GaN MQW structure and excited by pulse laser from top side. The optical detector was set at the side edge and we could get stimulated emission. This is the first result in the world, therefore, it prove that we could get high quality semi-polar GaN crystal.