Trial manufacture offine finish diamond etching machine using electron, ion, and laser beam.

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In this term, we have finished the trial manufacture offine finish diamond etching machine using electron and ion beam. The constitution of this machine is vacuum chamber, assist gas injection nozzle, sample holder, and ECR ion source, which can produce ion beam and electron beam because ofbipolar bias applied to extract grid. Using this machine, acceleration voltage dependence of specific etching rate of diamond with various ion etching methods such as ion beam etching (ME), reactive ion beam etching (REBE), ion beam assisted etching (D3AE) and reactive ion beam assisted etching (RIBAE) were examined. As the results, non-liner dependence was observed between acceleration voltage and specific etching rate. Furthermore, irradiation damage of various ion beam etching was examined with X-ray Photoelectron Spectroscopy (XPS). All of ion beam etching methods caused graphitic transition, however, we found RIBAE was damage less process.