Trial manufacture offine finish diamond etching machine using electron, ion, and laser beam.

试制电子、离子、激光束精加工金刚石蚀刻机。

• 批准号: 12650123
• 负责人: IWAO Miyamoto
• 金额: $ 2.05万
• 依托单位: Tokyo University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650123/
• 关键词: Diamond; Ion beam etching; Irradiation damage; Graphite; XPS; Oxygen gas; Argon gas; specific etching rate; FIB; SOG; ECR; RIE

In this term, we have finished the trial manufacture offine finish diamond etching machine using electron and ion beam. The constitution of this machine is vacuum chamber, assist gas injection nozzle, sample holder, and ECR ion source, which can produce ion beam and electron beam because ofbipolar bias applied to extract grid. Using this machine, acceleration voltage dependence of specific etching rate of diamond with various ion etching methods such as ion beam etching (ME), reactive ion beam etching (REBE), ion beam assisted etching (D3AE) and reactive ion beam assisted etching (RIBAE) were examined. As the results, non-liner dependence was observed between acceleration voltage and specific etching rate. Furthermore, irradiation damage of various ion beam etching was examined with X-ray Photoelectron Spectroscopy (XPS). All of ion beam etching methods caused graphitic transition, however, we found RIBAE was damage less process.

本学期，我们完成了电子束、离子束精加工金刚石蚀刻机的试制。该机由真空室、辅助气体喷嘴、样品架和ECR离子源组成，通过施加双极偏压引出栅极，可产生离子束和电子束。使用该机器，研究了采用离子束蚀刻（ME）、反应离子束蚀刻（REBE）、离子束辅助蚀刻（D3AE）和反应离子束辅助蚀刻（RIBAE）等各种离子蚀刻方法的金刚石的特定蚀刻速率的加速电压依赖性。结果，观察到加速电压和特定蚀刻速率之间的非线性相关性。此外，利用X射线光电子能谱(XPS)检查了各种离子束蚀刻的辐照损伤。所有离子束蚀刻方法都会引起石墨转变，然而，我们发现RIBAE是一种损伤较小的工艺。