Trial manufacture offine finish diamond etching machine using electron, ion, and laser beam.

本学期完成了电子束和离子束精加工金刚石蚀刻机的试制。本机由真空室、辅助注气喷嘴、样品架、ECR离子源组成，利用双极偏压产生离子束和电子束，应用于提取网格。利用该仪器，研究了离子束刻蚀（ME）、反应离子束刻蚀（REBE）、离子束辅助刻蚀（D3AE）和反应离子束辅助刻蚀（RIBAE）等不同离子刻蚀方法对金刚石比刻蚀率的加速电压依赖性。结果表明，加速电压与比蚀刻速率呈非线性关系。利用x射线光电子能谱（XPS）研究了不同离子束刻蚀的辐照损伤。所有离子束刻蚀方法都会引起石墨跃迁，但我们发现RIBAE是一种损伤较小的工艺。

In this term, we have finished the trial manufacture offine finish diamond etching machine using electron and ion beam. The constitution of this machine is vacuum chamber, assist gas injection nozzle, sample holder, and ECR ion source, which can produce ion beam and electron beam because ofbipolar bias applied to extract grid. Using this machine, acceleration voltage dependence of specific etching rate of diamond with various ion etching methods such as ion beam etching (ME), reactive ion beam etching (REBE), ion beam assisted etching (D3AE) and reactive ion beam assisted etching (RIBAE) were examined. As the results, non-liner dependence was observed between acceleration voltage and specific etching rate. Furthermore, irradiation damage of various ion beam etching was examined with X-ray Photoelectron Spectroscopy (XPS). All of ion beam etching methods caused graphitic transition, however, we found RIBAE was damage less process.