Study of High-Performance Cold-Cathode Electron Device with Fine Structure

高性能精细结构冷阴极电子器件的研究

• 批准号: 13650375
• 负责人: KINOSHITA Haruhisa
• 金额: $ 1.98万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650375/
• 关键词: Diamond-like carbon films; Magnetron plasma; Supermagnetron plasma; Plasma CVD; Field emitter

In this study, we have prepared diamond-like amorphous carbon (DAC) films using a supermagnetron plasma CVD apparatus, which is suited for highly-uniform high-density plasma. The low resistive (electrical conductive) DAC film composed of carbon atoms was very hard in mechanical characteristics, and it would be suited to form vacuum field emitters. Using this electrical conductive DAC film, we have tried to fabricate 1μm-dotted DAC field emitters, and measured their field emission characteristics.In this experiment, high speed deposition of DLC films was studied using isobutane (I-C_4H_<10>) including 4 carbon atoms in one molecule. To lower the film resistivity, N_2 gas was introduced as n-type dopant, and we deposited DAV films using intermittent CVD technique to cool substrates. As a result, a film with resistivity of 0.03Ωcm and zero optical band gap was obtained at wafer temperature of 100℃ and rf powers of 1kW/1kW to upper and lower electrodes. Maximum film thickness obtained was 2.1μm and film hardness obtained was about 30GPa which was higher than that of SiO_2(13.1GPa). By FT・IR spectrum measurement, absorption spectra of C-N, C=N and C≡N stretching modes were observed, and N atoms inclusion in DLC films was confirmed. By application of these films to the fabrication of 1μm-dotted DAC field emitters, the low threshold voltage of 10V/μm and maximum emission current density of about 3mA/cm^2 were observed. Through this research, it was found that the application of electrical conductive DAC films to the formation of 1μm-dotted DAC filed emitters was effective to make high performance field emitters.

在本研究中，我们利用超磁控等离子体CVD设备制备了类金刚石非晶碳(DAC)薄膜，该设备适用于高度均匀的高密度等离子体。由碳原子组成的低阻(导电)DAC薄膜具有很高的力学性能，适合于形成真空场发射器件。利用这种导电DAC薄膜，我们尝试制作了1μm点DAC场发射器件，并测量了它们的场发射特性。在本实验中，我们研究了用含4个碳原子的异丁烷(I-C4H&lt；10&gt；)高速沉积类金刚石薄膜。为了降低薄膜的电阻率，引入了N_2气体作为n型掺杂，并采用间歇CVD技术沉积了DAV薄膜以冷却衬底。结果表明，在上、下电极射频功率为1kW/1kW，晶片温度为10 0Ω时，薄膜的电阻率为0.0 3℃cm，光学带隙为零。获得的最大膜厚为2.1μm，膜硬度约为30 GPa，高于SiO_2的13.1 GPa.通过FT·IR光谱测量，观察到了C-N、C=N和C-≡N伸缩模式的吸收光谱，证实了薄膜中存在N原子。将这些薄膜应用于1μm点阵数模转换器场发射极的制作，获得了10V/μm的低阈值电压和约3 mA/cm2的最大发射电流密度。通过研究发现，将导电DAC膜应用于形成1μm点DAC场发射体是制作高性能场发射体的有效方法。

项目成果

H.Kinoshita and N.Otaka: "Physical Properties of Nitrogen-Doped Diamond-Like Amorphous Carbon Films Deposited by Supermagnetron Plasma CVD"J.Vac.Sci.Technol.A. Vol.20. 1481-1485 (2002)

H.Kinoshita 和 N.Otaka：“超磁控等离子体 CVD 沉积的氮掺杂类金刚石非晶碳薄膜的物理性质”J.Vac.Sci.Technol.A。

H.Kinoshita: "Intermittent CVD of Thick Electrically Conductive DLC Films Using i-C_4H_<10>/N_2 Supermagnetron Plasma"J. Vac. Sci. Technol. A. Vol.20. 403-407 (2002)

H.Kinoshita：“使用 i-C_4H_<10>/N_2 超磁控等离子体间歇式 CVD 厚导电 DLC 薄膜”J。

H.Kinoshita and T.Murakami: "Intermittent Chemical Vapor Deposition of Thick Electrically Conductive Diamond-Like Amorphous Carbon Films Using-I-C_4H_<10>/N_2 Supermagnetron Plasma"J.Vac.Sci.Technol.A. Vol.20. 403-407 (2002)

H.Kinoshita 和 T.Murakami：“使用-I-C_4H_<10>/N_2 超磁控等离子体间歇化学气相沉积厚导电类金刚石非晶碳膜”J.Vac.Sci.Technol.A。

H.Kinoshita, R.Ikuta, S.Murakami and H.Suzuki: "Deposition and Field-Emission Characterization of Electrically Conductive Diamond-Like Amorphous Carbon Films"Proc.Joint Intl.Conf.on Advanced Science and Technology. Vol.7. 233-236 (2002)

H.Kinoshita、R.Ikuta、S.Murakami 和 H.Suzuki：“导电类金刚石非晶碳薄膜的沉积和场发射表征”Proc.Joint Intl.Conf.on Advanced Science and Technology。

H.Kinoshita, R.Ikuta, S.Murakami and H.Suzuki: "Growth and Field Emission Characterization of Electrically Conductive Diamond-Like Amorphous Carbon Films"Proc.Sympo.on Plasma Processing. Vol.20. 77-78 (2003)

H.Kinoshita、R.Ikuta、S.Murakami 和 H.Suzuki：“导电类金刚石非晶碳薄膜的生长和场发射特性”Proc.Sympo.on 等离子体处理。