Development of New Magnetron Plasma Source with Particle Energy Control

新型粒子能量控制磁控等离子体源的研制

• 批准号: 18540489
• 负责人: TOYODA Hirotaka
• 金额: $ 2.12万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18540489/
• 关键词: magnetron sputter; high energy particle; mass spectrometry; multilaver film; flat surface film; damage-free film

Magnetron plasmas are widely used for deposition of mutilayer films such as optical coating, magnetic recording media, semiconductor fabrication, and so on. Recent progress of fidelity in film deposition processes, it is required to deposit film with very high smoothness and high interface quality in nano-scale. In the case of magnetic multilayer films (Pt/Co etc.) those exhibit magnetic anisotropy, it is known that smoothness and suppression of atom mixing at the interface drastically influence the magnetic property of the film. So far, however, such precise interface control of the multilayer films are considered to be very difficult by the sputter deposition process, and understanding of the mechanism and suppression of such phenomena is one of important issues.For the control of the multilayer interface property, we focus on high energy rare gas species in magnetron plasmas. In this project, we established the diagnostic technique of such high energy rare gas atoms by mass spectrom … More etry, and studied on the new technology to control such high energy atoms.At first, we evaluated energy distribution of Ar atom in conventional planer DC magnetron plasma by using a mass spectrometer with an energy analyzer. The obtained results are compared with an originally-developed simulation code and feasibility of the measurement technique was confirmed. Next, we proposed two magnetron sputter techniques, i.e., VHF-DC superimposed magnetron sputter plasma and cylindrical magnetron sputter plasma. From the AM- energy distribution measurement, it was confirmed that both VHF-DC and cylindrical magnetron plasmas can suppress high energy Ar atoms. Finally, VHF-DC magnetron plasma source was applied to the deposition of magnetic multilayer films. In the case of VHF-DC magnetron sputter deposition, magnetic multilayer film with very good magnetic property was observed with very thin layer thickness in order of a few nm. Such good film property suggest that the atom mixing at the film interface was suppressed by suppression of high energy Ar atom flux. Less

磁控等离子体技术广泛应用于光学薄膜、磁记录介质、半导体制造等领域，近年来薄膜沉积工艺的保真性不断提高，要求沉积的存款薄膜具有纳米尺度的高平整度和高界面质量。在磁性多层膜（Pt/Co等）的情况下，这些表现出磁各向异性，已知在界面处原子混合的平滑度和抑制显著影响膜的磁性质。然而，迄今为止，通过溅射沉积工艺对多层膜进行如此精确的界面控制被认为是非常困难的，理解这种现象的机理和抑制是重要的问题之一。在本项目中，我们建立了这种高能稀有气体原子的质量谱诊断技术， ...更多信息 本文首先利用带能量分析仪的质谱仪对Ar原子在常规平面直流磁控等离子体中的能量分布进行了测量。所得到的结果进行了比较，与原来开发的模拟代码和测量技术的可行性得到了证实。接下来，我们提出了两种磁控溅射技术，即，VHF-DC叠加磁控溅射等离子体和圆柱形磁控溅射等离子体。从AM-能量分布测量，证实了VHF-DC和圆柱形磁控等离子体可以抑制高能Ar原子。最后，将VHF-DC磁控等离子体源应用于磁性多层膜的沉积。在VHF-DC磁控溅射沉积的情况下，观察到具有非常好的磁性能的磁性多层膜，其层厚度非常薄，在几个nm的数量级。这种良好的薄膜性能表明，在薄膜界面处的原子混合抑制高能Ar原子通量。少

项目成果

Dependence of GMR in Co/Cu Multilayers on Sputtering Conditions

Co/Cu 多层膜中 GMR 对溅射条件的依赖性

• 发表时间: 2006
• 作者: C. C. Chen;Y. Sakashita;Y. Suzuki;T. Kato;S. Iwata;S. Tsunashima;H. Toyoda;K. Sasaki;H. Sugai
• 通讯作者: H. Sugai

Suppression of Super High-Energy Species by VHF-DC Superimposed Magnetron Sputter Plasma

VHF-DC 叠加磁控溅射等离子体抑制超高能物质

• 发表时间: 2006
• 期刊: Trans. Mat. Res. Soc. Jpn vol.32
• 作者: Y. Sakashita;Y. Takagi;T. Kato;H. Toyoda;S. Iwata;S. Tsunashima;H. Sugai
• 通讯作者: H. Sugai

Energy Control of Backscattered Rare Gas Atoms by VHF-DC Superimposed Magnetron Sputtering (Invited)

VHF-DC叠加磁控溅射背散射稀有气体原子的能量控制（特邀）

• 发表时间: 2006
• 期刊: Proc. The 17th Symposium of The Materials Research Society of Japan, International Session, Tokyo, Japan
• 作者: Hirotaka Toyoda;Hideo Sugai
• 通讯作者: Hideo Sugai

Numberical Simulation of Energetic Species in a VHF-DC Magnetron Plasma and Comparison with Experiments

VHF-DC 磁控管等离子体中高能粒子的数值模拟及与实验的比较

• 发表时间: 2006
• 期刊: Abstract of 6th International Conference on Reactive Plasmas, Matsushima, Japan
• 作者: H.Toyoda;Y.Sakashita;Y.Takagi;H.Sugai
• 通讯作者: H.Sugai