Plasma CVD of Electrical Conductive Diamond-Like Carbon Films for semiconductor Device Use

半导体器件用导电类金刚石碳膜的等离子体 CVD

• 批准号: 09650382
• 负责人: KINOSHITA Haruhisa
• 金额: $ 1.41万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650382/
• 关键词: Diamond-like Carbon film; Magnetron plasma; Supermagnetron plasma; Plasma CVD; Field emitter

In this study, low resistive (electrical conductive) diamond-like carbon (DLC) films of about 1 Ω cm were formed for their applications to the coating of Si field emitters. By the control of parameters such as deposition temperature etc., the fabrication method and physical properties of electrical conductive amorphous diamond films, i.e. DLC films, with high hardness were studied. By the application of these DLC films to the coating of Si field emitters, good I-V characteristics were obtained.In this experiment, by using isobutane (i-CィイD24ィエD2HィイD210ィエD2) including 4 carbon atoms in one molecule, high speed deposition of DLC films was studied. To lower the film resistivity, NィイD22ィエD2 gas was introduced as n-type dopant. As a result, a film with deposition rate of 1900Å/min and low resistivity of 0.17 Ω cm was obtained at wafer temperature of 160℃ and rf powers of 1kW/1kW to upper and lower electrodes. Film hardness was over 1700kg/mmィイD12ィエD1, which was higher than 1340kg/mmィイD12ィエD1 of glass (SiOィイD22ィエD2). By FT-IR spectrum measurement, absorption spectra of C-N, C=N and C≡N stretching modes were observed, and N atoms inclusion in DLC films was confirmed. By application of these films to the coating of Si field emitters, the threshold voltage of field emission was reduced from 550V to 360V, and random noise was reduced largely. Through this research, it was found that the application of electrical conductive DLC films to the coating of Si field emitters was effective to make high performance field emitters.

在本研究中，我们制备了大小约为1Ωcm的低阻(导电)类金刚石薄膜，并将其应用于硅场发射器件的镀膜。通过控制沉积温度等参数，研究了高硬度非晶金刚石导电薄膜即DLC薄膜的制备方法和物理性能。通过将这些类金刚石薄膜应用于硅场发射器件的镀膜，获得了良好的I-V特性。在本实验中，以分子中含有4个碳原子的异丁烷(I-CィイD24ィエD2HィイD210ィエD2)为原料，对类金刚石薄膜的高速沉积进行了研究。为了降低薄膜的电阻率，引入了N-ィイ-D22-ィエ-D2气体作为n型掺杂。结果表明，在上、下电极射频功率为1kW/1kW，晶片温度为160kW时，获得了沉积速率为1900kW/Å，低电阻率为0.17Ωcm的薄膜。薄膜硬度超过1700 kg/mmィイD12ィエD1，高于玻璃(SiOィイD22ィエD2)的1340 kg/mmィイD12ィエD2。通过FT-IR光谱测量，观察到了C-N、C=N和C-≡N伸缩模式的吸收光谱，证实了薄膜中存在N原子。将这些薄膜应用于硅场发射器件的镀膜，场发射的阈值电压从550V降至360V，随机噪声大大降低。通过研究发现，将导电类金刚石薄膜应用于硅场发射极的镀膜是制备高性能场发射极的有效方法。

项目成果

H. Kinoshita, S. Nomura, and M. Honda: "Thickness-Distribution of Large-Area DLC Films Formed by CHィイD24ィエD2/HィイD22ィエD2 Supermagnetron Plasma CVD with Application of a Stationary Magnetic Field"J. Vac. Sci. Tecnol. A. Vol. 18. 367-371 (2000)

H. Kinoshita、S. Nomura 和 M. Honda：“应用固定真空的 CH-D24-D2/H-D22-D2 超磁控管等离子体 CVD 形成的大面积 DLC 薄膜的厚度分布”科学。A.卷18。367-371（2000）

K. Sawada, H. Kinoshita, T. Masuda and M. Ishida: "Noise Characteristics of Emission Current from Conductive Diamond-Like Carbon Thin Films Coating on Cone Shaped Silicon Filed Emitters"J. Vac. Sci. Tecnol. A. (in press). (2000)

K. Sawada、H. Kinoshita、T. Masuda 和 M. Ishida：“锥形硅场发射器上导电类金刚石碳薄膜涂层发射电流的噪声特性”J。

H.Kinoshita: "Formation of Electrical Conductive Hard-Carbon(DLC)Films Using i-C_4H_<10>/N_2 Supermagnetron Plasma"Superficies y Vacio. vol.9. 108-110 (1999)

H.Kinoshita：“使用 i-C_4H_<10>/N_2 超磁控等离子体形成导电硬碳 (DLC) 薄膜”Superficies y Vacio。

H.Kinoshita: "Formation of Electrical Conductive Diamond-Like Carbon Films Using i-C_4H_<10>/N_2 Supermagnetron Plasma"Proceedings of Symposium on Plasma Processing. vol.17. 235-238 (2000)

H.Kinoshita：“使用 i-C_4H_<10>/N_2 超磁控等离子体形成导电类金刚石碳膜”等离子加工研讨会论文集。

吉田雅裕: "i-C_4H_<10>/N_2スーパーマグネトロンプラズマを用いた導電性硬質カーボンの成膜(V)" 第45回応用物理学関係連合講演会講演予稿集. No.2. 522-522 (1998)

Masahiro Yoshida：“使用 i-C_4H_<10>/N_2 超磁控管等离子体沉积导电硬碳（V）”第 45 届应用物理学会会议记录第 2. 522-522 号（1998 年）。