RF-DC Coupled Mode Bias Sputtering System

RF-DC耦合模式偏压溅射系统

• 批准号: 62850050
• 负责人: SHIBATA Tadashi
• 金额: $ 12.67万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-62850050/
• 关键词: bias-sputtering; thin film formation; low temperature epitaxy; pure aluminum metalization; hillock-free; エピタキシャルシリコン; スパッタ成膜; アルミ薄膜

The RF-DC coupled-mode bias sputtering system has been developed in which important process parameters are all able to be controlled, precisely and independently. Using this system, a new film formation technology called "Low-Kinetic-Energy Particle Process" has been established. In this process, concurrent low energy ion bombardment of a growing film surface is utilized to activate the surface atoms, thus controlling the kinetics of crystal growth. As a result, formation of high quality thin films at extremely low temperatures have been realized. Pure aluminum films formed by this process exibited hillock-free features up to a 500゜C annealing temperature as well as an excellent step coverage at contact holes. One of the most remarkable achievements in this project is the formation of perfect epitaxial silicon layer at such a low temperature as 300゜C or below. This has been achieved by optimizing the low-energy ion bombardment conditions for film growth as well as for in situ substrate surface cleaning. The research results obtained in this study have opened a new avenue in the fabrication technology for future advanced device structure in deep submicron ULSI era.

研制了RF-DC耦合模偏压溅射系统，实现了重要工艺参数的独立、精确控制。利用这一系统，建立了一种新的成膜技术--“低动能粒子法”。在这个过程中，同时低能离子轰击生长膜表面被用来激活表面原子，从而控制晶体生长的动力学。结果，实现了在极低温度下形成高质量薄膜。该工艺制备的纯铝薄膜在500 ℃退火温度下无小丘形成，接触孔处台阶覆盖率高。该项目最显著的成就之一是在300 ℃或以下的低温下形成完美的外延硅层。这是通过优化薄膜生长和原位衬底表面清洁的低能离子轰击条件来实现的。本研究取得的研究成果为深亚微米ULSI时代未来先进器件结构的制造技术开辟了新的途径。

项目成果

毅田直: 半導体基盤技術研究会編、超LSIウルトラクリーンテクノロジーシンポジウム、サブミクロンULSIプロセス技術、プロシーディング. 7. 229-241 (1988)

Naoshi Takeda：半导体基础技术研究小组编辑，Very LSI 超清洁技术研讨会，亚微米 ULSI 工艺技术，论文集。 7. 229-241 (1988)

T.Ohmi: Applied Physics Letters. 53. 364-365 (1988)

T.Ohmi：应用物理快报。

Tadashi,Shibata: "Thin film formation by low energy ion bombardment" Proc. International Symposium on Ultra Clean Technology for Ultra Large-Scale Integration, Tokyo. 7. 229-241 (1988)

Tadashi，Shibata：“低能离子轰击形成薄膜”Proc。

柴田直: 半導体基盤技術研究会編、超LSIウルトラクリーンテクノロジーシンポジウム、サブミクロンVLSIプロセス技術、プロシーディング. 7. 229-241 (1988)

Naoki Shibata：半导体基础技术研究小组，超级 LSI 超清洁技术研讨会，亚微米 VLSI 工艺技术，论文集。 7. 229-241 (1988)

T.Ohmi: Applied Physics Letters. 54. 523-525 (1988)

T.Ohmi：应用物理快报。