Rare earth modified silicon surfaces as templates for organic layer growth

稀土改性硅表面作为有机层生长的模板

• 批准号: 533876942
• 负责人: Professor Dr. Mario Dähne
• 金额: --
• 依托单位: Institut für Festkörperphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/533876942?language=en
• 关键词: Rare; earth; modified; silicon; surfaces

The ordered growth of thin organic layers on silicon surfaces is currently of high interest because of their fascinating physical properties as well as in view of possible applications including the integration of organics into the silicon technology. However, pure silicon surfaces are highly reactive because of their unsaturated dangling bonds, usually leading to rather disordered organic films. An interesting alternative are silicon surfaces modified by thin layers of atoms such as hydrogen, boron, or metal atoms, which have been studied intensively. Recently, we observed for the first time that Si(111) surfaces covered by rare earth silicide monolayers are a promising template for the highly ordered growth of thin organic films, in this case of cobalt phthalocyanine molecules. In the present project we plan a detailed study of selected organic molecules deposited on these rare earth modified silicon surfaces in order to determine the atomic structure and morphology of the films, the mechanisms for ordered growth, and their electronic and chemical properties. For this purpose, we employ scanning tunneling microscopy and spectroscopy, low energy electron diffraction, photoelectron spectroscopy, and near-edge X-ray absorption fine structure spectroscopy. By selecting molecules with different structure and different characteristics of potentially reactive sites, we may vary the balance between the less local van-der-Waals interaction and the local chemical bonding in order to tune the mobility of the molecules and therewith their trend to form ordered layers.

有机薄膜在硅表面的有序生长目前引起了人们的高度关注，因为它们具有迷人的物理性质，而且考虑到可能的应用，包括将有机物集成到硅技术中。然而，纯硅表面由于其不饱和的悬挂键而具有高度的反应性，通常会导致相当无序的有机薄膜。一种有趣的替代方法是由氢、硼或金属原子等薄层原子修饰的硅表面，这些已经得到了深入的研究。最近，我们首次观察到稀土硅化物单分子膜覆盖的Si(111)表面是一种很有前途的模板，可以用来高度有序地生长有机薄膜，在这种情况下生长的是酞菁钴分子。在本项目中，我们计划对沉积在这些稀土改性硅表面的部分有机分子进行详细的研究，以确定薄膜的原子结构和形貌，有序生长的机制，以及它们的电子和化学性质。为此，我们使用了扫描隧道显微镜和光谱、低能电子衍射、光电子能谱和近边X射线吸收精细结构光谱。通过选择具有不同结构和不同潜在活性中心特征的分子，我们可以改变较少的局域van-der-Waals相互作用和局域化学键之间的平衡，以调节分子的迁移率及其形成有序层的趋势。