Rare earth modified silicon surfaces as templates for organic layer growth
Rare earth modified silicon surfaces as templates for organic layer growth
批准号:
533876942
负责人:
Professor Dr. Mario Dähne
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
--
资助国家:
德国
项目状态:
未结题
起止时间:
中文摘要
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英文摘要
The ordered growth of thin organic layers on silicon surfaces is currently of high interest because of their fascinating physical properties as well as in view of possible applications including the integration of organics into the silicon technology. However, pure silicon surfaces are highly reactive because of their unsaturated dangling bonds, usually leading to rather disordered organic films. An interesting alternative are silicon surfaces modified by thin layers of atoms such as hydrogen, boron, or metal atoms, which have been studied intensively. Recently, we observed for the first time that Si(111) surfaces covered by rare earth silicide monolayers are a promising template for the highly ordered growth of thin organic films, in this case of cobalt phthalocyanine molecules. In the present project we plan a detailed study of selected organic molecules deposited on these rare earth modified silicon surfaces in order to determine the atomic structure and morphology of the films, the mechanisms for ordered growth, and their electronic and chemical properties. For this purpose, we employ scanning tunneling microscopy and spectroscopy, low energy electron diffraction, photoelectron spectroscopy, and near-edge X-ray absorption fine structure spectroscopy. By selecting molecules with different structure and different characteristics of potentially reactive sites, we may vary the balance between the less local van-der-Waals interaction and the local chemical bonding in order to tune the mobility of the molecules and therewith their trend to form ordered layers.
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Atomic structure and electronic properties of silicide nanowires
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批准号:221711438
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项目类别:Research Units
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资助金额:$0.0万
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财政年份:2012
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负责人:Professor Dr. Mario Dähne
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依托单位:
Atomic and Electronic Structure of Clusters on Silicon Surfaces
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批准号:166479401
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项目类别:Research Units
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资助金额:$0.0万
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财政年份:2010
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负责人:Professor Dr. Mario Dähne
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依托单位:
Atomare Struktur und elektronische Eigenschaften von GaSb-Nanostrukturen
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批准号:38273339
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2007
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负责人:Professor Dr. Mario Dähne
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依托单位:
Wachstum und Überwachsen von InAs-Quantenpunkten
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批准号:35019820
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2006
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负责人:Professor Dr. Mario Dähne
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依托单位:
Nanodrähte und Dünnschichten mit niederdimensionalen elektronischen Eigenschaften
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批准号:5440286
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2004
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负责人:Professor Dr. Mario Dähne
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依托单位:
Thin III-V semiconductor layers on GaAs (001) vicinal surfaces
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批准号:5401941
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2003
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负责人:Professor Dr. Mario Dähne
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依托单位:
Räumliche und elektronische Struktur von Siliziddrähten auf Si(001)
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批准号:5160506
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:1999
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负责人:Professor Dr. Mario Dähne
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依托单位:
国内基金
海外基金
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