Atomic and Electronic Structure of Clusters on Silicon Surfaces

为了弥补气相掺杂硅团簇与团簇相关器件之间的差距，本项目研究硅表面生长的金属硅化物团簇。这种结构可以作为未来大规模应用的构建块。这些团簇将在超高真空（UHV）中使用分子束外延（MBE）通过自组织制备，并将使用扫描隧道显微镜（STM）和光谱（STS）研究它们的原子结构和单个电子特性。不同的簇结构，预计将形成，这取决于制备条件，如基板取向，曝光，或生长和退火温度。特别强调的是原子结构内的集群，可能有序的安排在一个或两个维度的超晶格，和空间分辨研究其电子状态。在合作拉曼实验计划使用一个移动的特高压传输，也被用于研究集群和富勒烯样品的合作项目。

In order to bridge the gap from doped silicon clusters in the gas phase to cluster-related devices, this project addresses metal silicide clusters grown on silicon surfaces. Such structures may act as building blocks for future larger-scale applications. The clusters will be prepared in ultra-high vacuum (UHV) by self-organization using molecular beam epitaxy (MBE), and their atomic structure and individual electronic properties will be studied using scanning tunneling microscopy (STM) and spectroscopy (STS). Different cluster structures are expected to form, depending on the preparation conditions such as substrate orientation, exposure, or growth and annealing temperature. Special emphasis lies on the atomic structure within the clusters, a possibly ordered arrangement in one- or two-dimensional superlattices, and the spatially resolved study of their electronic states. In cooperation Raman experiments are planned using a mobile UHV transfer, being also used for studies of cluster and fullerene samples from collaborating projects.