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Microstructure characterization of semiconducting iron disilicide thin films by using the HARECXS and the CBED methods

使用 HARECXS 和 CBED 方法表征半导体二硅化铁薄膜的微观结构

基本信息

批准号：
16360315
负责人：
ITAKURA Masaru
金额：
$ 8万
依托单位：
KYUSHU UNIVERCITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

项目摘要

In this study, epitaxial β-FeSi_2 films were prepared by sputtering on the flat and the patterned Si(001) substrates under various substrate temperatures (T_s) with deposition rates of Fe (V_<Fe>), and the microstructures of these films were characterized by transmission electron microscopy (TEM). The following results were obtained.(1)In the film deposited on the flat Si(001) substrate, precipitates of flat-bottom shaped β-FeSi_2 and those of round-bottom shaped α-FeSi2 are formed at T_s=500℃ and V_<Fe>=0.02 nm/s. The β-FeSi_2 adopts the epitaxy to (001)_<Si>, plane, while α-FeSi_2 selects the epitaxy to {111}_<Si>, planes inside the Si matrix. At T_s=350℃ and V_<Fe>=0.01 nm/s, a continuous β-FeSi_2 layer are formed epitaxially on the Si(001) substrate without forming α-FeSi_2. The lower temperature and the higher Fe-concentration suppress the formation of a-FeSi_2 and promote the formation of β-FeSi_2.(2)In the film deposited on the patterned Si(001) substrate, both β-and α-FeSi_2 precipitates are formed in the top-hills and the valleys of the patterned substrate, while only α-FeSi_2 precipitates are formed in the sidewalls. Not only the growth conditions but also geometric situations affect strongly the epitaxial growth of FeSi_2 precipitates.(3)In the film deposited on Cu-mediated Si(001) substrate, non-radiative recombination centers in the β-FeSi_2 grains and the hetero-interface are improved, and then PL intensity from the β-FeSi_2 grains can be increased significantly.(4)ALCHEMI (atom location by channeling enhanced microanalysis) method of electron diffraction was employed to study the atomic configuration of the β-FeSi_2 film grown on Cu-mediated Si(001) substrate. In the β-FeSi_2 film, Cu atoms tend to occupy the Fe-site.(5)Clear CBED (convergent beam electron diffraction) patterns from the β-FeSi_2 grain and the Si substrate were measured successfully, in order to estimate the lattice strain near the hetero-interface.

本研究在不同衬底温度(T_S)、沉积速率为Fe(V_t；Fe&gt；)的条件下，在平坦的和图案化的Si衬底上溅射制备了β-FeSi_2薄膜，并用透射电子显微镜对薄膜的微观结构进行了表征。(1)在平坦的Si衬底上沉积的薄膜中，在T_S=500℃和V_&lt；Fe&gt；=0.02 nm/S处形成了平底形状的β-FeSi_2和圆底形状的α-FeSi_2的析出物，β-FeSi_2采用(001)_lt；Si&gt；平面的外延，而α-FeSi_2选择了Si基质内的{111}_t；Si&gt；当T_S=350℃，V_&lt；Fe&gt；=0.01 nm/S时，在Si(001)衬底上外延生长出连续的β-FeSi_2层，而没有形成α-FeSi_2。较低的温度和较高的Fe浓度抑制了a-FeSi_2的形成，而促进了β-FeSi_2的形成。(2)在图案化的Si(001)衬底上沉积的薄膜中，β-FeSi_2和α-FeSi_2都在图案化衬底的顶丘和山谷中形成，而在侧壁只有α-FeSi_2的析出。(3)在铜基Si(001)衬底上生长的薄膜中，β-FeSi2晶体中的非辐射复合中心和异质界面都得到了改善，β-FeSi2晶体的荧光强度显著提高。(4)采用电子衍射的原子定位方法(ALCHEMI)研究了在铜基Si(001)衬底上生长的β-FeSi2薄膜的原子构型。在β-FeSi_2薄膜中，铜原子倾向于占据Fe位。(5)为了估算异质界面附近的晶格应变，成功地测量了β-FeSi_2晶体和Si衬底的清晰的会聚束电子衍射(CBED)图。

项目成果

期刊论文数量（31）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Interlayer coupling in ferromagnetic epitaxial Fe3Si∕FeSi2 superlattices

铁磁外延 Fe3Si∕FeSi2 超晶格中的层间耦合

DOI：
10.1063/1.2410222
发表时间：
2006
期刊：
影响因子：
0
作者：
T. Yoshitake;T. Ogawa;D. Nakagauchi;D. Hara;M. Itakura;N. Kuwano;Y. Tomokiyo;K. Takeda;T. Kajiwara;M. Ohashi;G. Oomi;K. Nagayama
通讯作者：
K. Nagayama

Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

DOI：
10.1063/1.1978984
发表时间：
2005-06
期刊：
Applied Physics Letters
影响因子：
4
作者：
T. Yoshitake;D. Nakagauchi;T. Ogawa;M. Itakura;N. Kuwano;Y. Tomokiyo;T. Kajiwara;K. Nagayama
通讯作者：
T. Yoshitake;D. Nakagauchi;T. Ogawa;M. Itakura;N. Kuwano;Y. Tomokiyo;T. Kajiwara;K. Nagayama

Formation of β-FeSi_<2-x>Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure

[a-Si/a-FeSiGe]_n多层结构Ge偏析控制固相生长形成β-FeSi_<2-x>Ge_x