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Development of Target Preparation by the HIVIPP Method in Higher Pressure than 1 Atm

Development of Target Preparation by the HIVIPP Method in Higher Pressure than 1 Atm
在高于 1 Atm 的压力下通过 HIVIPP 方法制备靶标的开发
批准号:
17340086
负责人:
SUGAI Isao
金额:
$8.38万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2006

项目摘要

项目成果

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中文摘要
翻译
我们开发了一种新的高能振动粉末沉积方法,该方法是基于高压气体中平行电极之间的高能电场中粉末的高能振动运动。这种方法非常简单,不需要任何复杂的机制。我们还发现,在背部条件下,作为靶点制备技术也非常有用。我们在没有真空抽气系统的情况下,用高压介质气体在一个大气压下尝试了用HIVIPP方法从非金属硅和金属铬粉末中沉积靶。我们研究了沉积速率(μg/cm_2/h)与1到9个大气压的沉积速率。空气中的空气。结果显示约2台自动取款机。平均最大沉积量为95 mg/cm_2/h,沉积速率强烈依赖于气压。在2~3大气压下,我们在铜衬上沉积了非金属硅粉和金属铬粉。氮气、氧气和空气的反应气体在25千伏左右时,沉积靶材的颜色随沉积厚度的不同由金属靶变为深蓝色和黑色(对于铬)和棕色(对于硅靶)。用X射线光电子能谱(PIXE)测定了碳、氮、氧的低z元素。
英文摘要
We have developed a new deposition method of HIVIPP( High energy VIbrational Powder Plating), which is based on the high energy vibrational motion of powder in the high electric field between parallel electrodes in high pressure gases. This method is very simple and does not require any complicated mechanisms. We have found also to be very useful as a target preparation technique in backed condition.1. We have tried target depositions from non-metallic Si and metallic Cr powders by means of the HIVIPP method using high pressure medium gases over one atmosphere without vacuum pumping system.2. We have investigated the deposition rate (μg/cm_2/h)vs 1 through 9 atm. Of the air.3. The result shows around 2 atm. Showed maximum deposition of 95 mg/cm_2/h on average and we found the deposition rate depend strongly on the air pressure.4. We have deposited non metallic Si and metallic Cr powders on the copper backings at the 2~3 atm. Of reactive gases of nitrogen, oxygen and air at around 25 kV and then, the color of the deposited targets changed metallic one to thick blue and black for the Cr and to brown for the Si targets depending of the deposited thickness.5. We have measured the low z elements of C, N and O by PIXE.
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会议论文
Preparation of Thick Enriched Isotopic Si Target by the HIVIPP Method
HIVIPP法制备厚层富集同位素硅靶材
DOI: --
发表时间: 2005
期刊: Nucl.Instr.and Metho.in Physics Research A
影响因子: --
作者: [I.Sugai, Y.Takeda, et al.]
通讯作者: et al.
Preparation of thick enriched isotopic Si targets by the HIVIPP method
HIVIPP法制备厚层富集同位素硅靶材
DOI: --
发表时间: 2006
期刊: Nucl.Instr.and Meth.in Physics Research A561
影响因子: --
作者: [I. Sugai, Y. Takeda, H. Kawakami]
通讯作者: H. Kawakami
Fabrication of Boron - Mixed Carbon Stripper and Target Backing Foils
硼-混合碳剥离剂和靶材背衬箔的制造
DOI: --
发表时间: 2006
期刊: Japan Journal of Applied Physics 45・11
影响因子: --
作者: [I.Sugai, Y.Takeda, H.Kawakami]
通讯作者: H.Kawakami
DOI: 10.1016/j.nima.2005.12.225
发表时间: 2006-05
期刊: Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
影响因子: 1.4
作者: [I. Sugai;Y. Takeda;M. Oyaizu;H. Kawakami;Y. Irie;Y. Arakida;K. Hara;H. Hattori;K. Kawasaki;J. Kamiya;M. Kinsho;K. Kuramochi]
通讯作者: I. Sugai;Y. Takeda;M. Oyaizu;H. Kawakami;Y. Irie;Y. Arakida;K. Hara;H. Hattori;K. Kawasaki;J. Kamiya;M. Kinsho;K. Kuramochi
Development of high durability long-lived hybrid carbon foils with 300h under 2300K high temperature
Development of Hybrid Long-Lived Carbon Stripper Foils with High Durability at 2300K
Development of high durability carbonfoils against 2000K
DEVELOPMENT OF A CONTROLLING METHOD FOR THE CARBON BUILD-UP ON THIN CARBON STRIPPER FOILS DURING BEAMBOM BARDMENT
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