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Development of nitride targets with a new RF-discharge reactive sputtering apparatus with magnetron.

Development of nitride targets with a new RF-discharge reactive sputtering apparatus with magnetron.
使用新型磁控管射频放电反应溅射装置开发氮化物靶材。
批准号：
58840006
负责人：
SUGAI Isao
金额：
$3.58万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1983
资助国家：
日本
项目状态：
已结题
起止时间：
1983 至 1985
来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-58840006/
关键词：
Nuclear TargetSputteringMagnetronRF-Discharge薄膜形成

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中文摘要
翻译
我们设计并制作了一台新型磁控射频反应溅射装置。利用该装置，我们研制了一种氮化物靶的制备方法，成功地制备了TiN、NbN和AiN等氮化物靶，并用65MeV α粒子的弹性散射研究了靶的纯度。
英文摘要
We have designed and constructed a new RF-discharge reactive sputtering apparatus with magnetron. By using the apparatus, we have developed a method to make nitride targets and successfully prepared such as TiN, NbN and AiN targets.The purity of the targets has been investigated by means of elastic scattering of 65 MeV alpha particles from INS-SF cyclotron.
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