Lower-Temperature Deposition of Poly-crystalline Silicon Film by High-Density Plasma

高密度等离子体低温沉积多晶硅薄膜

• 批准号: 09558055
• 负责人: TOYODA Hirotaka
• 金额: $ 4.29万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09558055/
• 关键词: poly-crystalline silicon; inductively-coupled plasma; lower temperature deposition; high-density plasma; high speed deposition; large area deposition

Poly-crystalline silicon is one of candidate of the future materiel for thin film transistor. However, deposition technique which satisfies large area, high-speed, lower temperature is not yet established. Purpose of this research is to establish new technique which meets with the above requirement.Followings are main results of this research project.1) Experimental demonstration of poly-crystalline silicon by inductively-coupled plasma.By using an internal-antenna inductively-coupled plasma, we have demonstrated deposition of poly-crystalline silicon deposition. Film evaluation is carried out by using X-ray diffraction analysis (XRD) and transparent electron microscopy (TEM). The XRD result have indicated that the crystalline of the film is (220) oriented and that the grain size is up to 150nm. The TEM result have shown that the film has columnar morphology.2) Investigation of ionic composition in the plasmaBy using quadrupole mass spectrometer, we have investigated ionic composition in the high-density silane plasma, and have found that the SiHx+ ionic component can be sufficiently high enough to explain the film deposition rate. Furthermore, it is also found that the SiHx+ ionic composition is roughly constant irrespective to silane flow rate ratio. This suggests that the crystallization of the film does not depend on the SiHx+ ionic composition.3) Reproducibility of film crystallizationWe have found that the reproducibility of the film crystallization can be improved by controlling the vessel wall condition. This suggests that the key species (presumably H atom) for the film crystallization critically depends on the wall condition.

多晶硅是未来薄膜晶体管材料的候选材料之一。然而，目前还没有建立起满足大面积、高速、低温的沉积技术。本研究的目的是建立一种满足上述要求的新技术，主要研究成果如下：1）电感耦合等离子体沉积多晶硅的实验演示利用内天线电感耦合等离子体，我们演示了多晶硅的沉积。通过使用X射线衍射分析（XRD）和透明电子显微镜（TEM）进行膜评价。XRD结果表明，薄膜为（220）晶面取向，晶粒尺寸达到150nm。2）等离子体中离子成分的研究利用四极质谱仪对高密度硅烷等离子体中的离子成分进行了研究，发现SiHx+离子成分高到足以解释薄膜的沉积速率。此外，还发现，SiHx+离子组成是大致恒定的，与硅烷流速比无关。这表明薄膜的结晶不依赖于SiHx+离子组成。3）薄膜结晶的再现性我们发现，通过控制容器壁条件，可以提高薄膜结晶的再现性。这表明，关键物种（大概是H原子）的薄膜结晶严格依赖于壁条件。

项目成果

豊田他: "多結晶シリコン薄膜の低温形成用誘導結合シランプラズマの診断" 第45回応用物理学会学術講演会予稿集. 1. 78-78 (1998)

Toyoda等人：“用于低温形成多晶硅薄膜的感应耦合硅烷等离子体的诊断”第45届日本应用物理学会年会论文集1. 78-78 (1998)。

M.Goto et al.: "Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma" Jpn. J. Appl. Phys.36. 3714-3720 (1997)

M.Goto 等人：“利用改进的电感耦合等离子体低温生长非晶硅和多晶硅薄膜”Jpn。

K. Goshim et al.: "Low-Temperature Formation of poly-Si Films by Inductively-Coupled Silane Plasma" Proc. 1st Asian Pacific Int. Sympo. on the Basic and Application of Plasma Technol.183-186 (1997)

K. Goshim 等人：“通过电感耦合硅烷等离子体低温形成多晶硅薄膜”Proc。

M. Goto et al.: "Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma"Jpn. J. Appl. Phys.. 36, No.6A. 3714-3720 (1997)

M.Goto 等人：“利用改进的感应耦合等离子体低温生长非晶硅和多晶硅薄膜”Jpn。

K.Goshima et al.: "Low Temperature Deposition of Poly-Crystalline Silicon Films from a Modified Inductively-Coupled Silane Plasma"Jpn.J.Appl.Phys.. 36,No.6A. 3655-3659 (1999)

K.Goshima等人：“来自改进的电感耦合硅烷等离子体的多晶硅膜的低温沉积”Jpn.J.Appl.Phys.36，No.6A。