Magnet-free microwave sputter deposition with uniform target utilization

具有均匀靶材利用率的无磁微波溅射沉积

• 批准号: 24654189
• 负责人: TOYODA Hirotaka
• 金额: $ 2.41万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24654189/
• 关键词: マイクロ波; スパッタ; 表面波; 均一プラズマ

The purpose of this research is to obtain guideline for the development of two-dimensionally-uniform sputtering system using mirowave plasma production. Through this research, low pressure plasma production using microwave power is successfully realized. Furthermore, by applying RF power to the microwave plasma, uniform dielectric sputtering is realized with 10 cm square area. This is innovative result that cannot be realized by conventional sputtering system that utilize magnetic field. The result obtained by this project can be applied to various electronic device manufacturing.

本研究的目的是为微波等离子体生产二维均匀溅射系统的发展提供指导。通过本研究，成功实现了微波功率低压等离子体生产。此外，通过对微波等离子体施加射频功率，实现了10cm平方面积的均匀介电溅射。这是利用磁场的传统溅射系统无法实现的创新成果。本课题的研究成果可应用于各种电子器件的制造。

项目成果

低圧環境下における高密度マイクロ波プラズマの生成

低压环境下产生高密度微波等离子体

• 作者: Ayumi Ando;Hidetaka Uno;Tsuneo Uris;Satoshi Hamaguchi;野田 智紀，中坊 将人，豊田 浩孝
• 通讯作者: 野田 智紀，中坊 将人，豊田 浩孝

Development of Magnet-Free Sputtering System for Dielectric Film Deposition

介质薄膜沉积无磁溅射系统的开发

• 发表时间: 2013
• 作者: Y. Sarugaku;Y. Ikeda;N. Kobayashi et al.;T. Noda and H. Toyoda
• 通讯作者: T. Noda and H. Toyoda

Magnet-Free Sputtering System Using Surface Wave Plasma

使用表面波等离子体的无磁溅射系统

• 发表时间: 2014
• 作者: T. Hagihara;T. Noda and H. Toyoda
• 通讯作者: T. Noda and H. Toyoda

Development of Magnet-Free Uniform Sputtering System for Dielectric Film Deposition

用于介质薄膜沉积的无磁均匀溅射系统的开发

• 作者: Tomonori Noda;and Hirotaka Toyoda
• 通讯作者: and Hirotaka Toyoda

Development of Magnet-Free Uniform Sputtering System by RF and Microwave Power Superposition

射频与微波功率叠加无磁均匀溅射系统的研制

• 发表时间: 2014
• 作者: Hagihara;T. Noda and H. Toyoda
• 通讯作者: T. Noda and H. Toyoda