Magnet-free microwave sputter deposition with uniform target utilization
Magnet-free microwave sputter deposition with uniform target utilization
批准号:
24654189
负责人:
TOYODA Hirotaka
金额:
$2.41万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2014-03-31
中文摘要
本研究的目的是为微波等离子体生产二维均匀溅射系统的发展提供指导。通过本研究,成功实现了微波功率低压等离子体生产。此外,通过对微波等离子体施加射频功率,实现了10cm平方面积的均匀介电溅射。这是利用磁场的传统溅射系统无法实现的创新成果。本课题的研究成果可应用于各种电子器件的制造。
英文摘要
The purpose of this research is to obtain guideline for the development of two-dimensionally-uniform sputtering system using mirowave plasma production. Through this research, low pressure plasma production using microwave power is successfully realized. Furthermore, by applying RF power to the microwave plasma, uniform dielectric sputtering is realized with 10 cm square area. This is innovative result that cannot be realized by conventional sputtering system that utilize magnetic field. The result obtained by this project can be applied to various electronic device manufacturing.
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低圧環境下における高密度マイクロ波プラズマの生成
低压环境下产生高密度微波等离子体
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[Ayumi Ando, Hidetaka Uno, Tsuneo Uris, Satoshi Hamaguchi, 野田 智紀,中坊 将人,豊田 浩孝]
通讯作者:
野田 智紀,中坊 将人,豊田 浩孝
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Y. Sarugaku, Y. Ikeda, N. Kobayashi et al., T. Noda and H. Toyoda]
通讯作者:
T. Noda and H. Toyoda
Magnet-Free Sputtering System Using Surface Wave Plasma
使用表面波等离子体的无磁溅射系统
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[T. Hagihara, T. Noda and H. Toyoda]
通讯作者:
T. Noda and H. Toyoda
Development of Magnet-Free Uniform Sputtering System for Dielectric Film Deposition
用于介质薄膜沉积的无磁均匀溅射系统的开发
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[Tomonori Noda, and Hirotaka Toyoda]
通讯作者:
and Hirotaka Toyoda
Development of Magnet-Free Uniform Sputtering System by RF and Microwave Power Superposition
射频与微波功率叠加无磁均匀溅射系统的研制
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[Hagihara, T. Noda and H. Toyoda]
通讯作者:
T. Noda and H. Toyoda
共 10 条
High Precision Measurement of Plasma Density in Atmospheric Pressure Plasma
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批准号:21540509
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.83万
-
财政年份:2009
-
负责人:TOYODA Hirotaka
-
依托单位:
Development of New Magnetron Plasma Source with Particle Energy Control
-
批准号:18540489
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.12万
-
财政年份:2006
-
负责人:TOYODA Hirotaka
-
依托单位:
Surface Reaction Processes of Fluorocarbon Molecule and Fundamental Research on New Etching Process
-
批准号:15540474
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$1.98万
-
财政年份:2003
-
负责人:TOYODA Hirotaka
-
依托单位:
Lower-Temperature Deposition of Poly-crystalline Silicon Film by High-Density Plasma
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批准号:09558055
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.29万
-
财政年份:1997
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负责人:TOYODA Hirotaka
-
依托单位:
Diagnostic and Control of Silane Plasmas by Newlv Developed Radical Measurement Technique
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批准号:07680505
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项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$1.28万
-
财政年份:1995
-
负责人:TOYODA Hirotaka
-
依托单位:
Basic study on lithium coating and plasma-surface processes
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批准号:05680391
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
-
财政年份:1993
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负责人:TOYODA Hirotaka
-
依托单位:
海外基金