Property control of semiconductor nanostructure using surface strain as a new parameter

研究了高指数表面对半导体纳米结构结构和性能的影响。研究发现，硅衬底上Ge的生长主要以{105}面为主，这使得Ge的生长过程变得复杂。通过使用(105)取向的硅表面作为Ge生长的衬底，实现了更简单的生长，并从所制备的Ge岛中检测到了更强的光电子发射。为了研究这些性质，我致力于基于低能电子显微镜和扫描隧道显微镜的光谱技术的发展。采用绝缘体上硅结构的取向转换技术已经被开发出来，以扩大高折射率表面的应用。在Si(111)-Si(001)转化上验证了该方法在Si上实现GaN集成的有效性。

The role of high-index surfaces on the structure and property of semiconductor nanostructure has been investigated. It was found that the {105} surface dominates the growth of Ge on Si substrates, which makes its process complicated. By using the Si surface with the (105) orientation, which is the origin of the complexity, as the substrate for Ge growth, simpler growth has been realized and stronger photoemission has been detected from the fabricated Ge islands. In order to investigate such properties, I worked on the development of spectroscopic technique based on low-energy electron microscopy as well as a scanning tunneling microscopy. Orientation conversion technique using silicon-on-insulator structure has been developed to widen the applications of high-index surfaces. Its validity has been tested on Si(111)-Si(001) conversion for the integration of GaN on Si.