Property control of semiconductor nanostructure using surface strain as a new parameter

研究了高折射率表面对半导体纳米结构的结构和性能的影响。结果表明，Ge在Si衬底上的生长以{105}表面为主，过程较为复杂。采用复杂性的来源（105）取向的Si表面作为Ge生长的衬底，可以实现更简单的生长，并从制备的Ge岛中检测到更强的光电发射。为了研究这些性质，我致力于开发基于低能电子显微镜的光谱技术以及扫描隧道显微镜。利用绝缘体上硅结构的取向转换技术是为扩大高折射率表面的应用而发展起来的。在Si(111)-Si（001）转换上验证了其有效性。

The role of high-index surfaces on the structure and property of semiconductor nanostructure has been investigated. It was found that the {105} surface dominates the growth of Ge on Si substrates, which makes its process complicated. By using the Si surface with the (105) orientation, which is the origin of the complexity, as the substrate for Ge growth, simpler growth has been realized and stronger photoemission has been detected from the fabricated Ge islands. In order to investigate such properties, I worked on the development of spectroscopic technique based on low-energy electron microscopy as well as a scanning tunneling microscopy. Orientation conversion technique using silicon-on-insulator structure has been developed to widen the applications of high-index surfaces. Its validity has been tested on Si(111)-Si(001) conversion for the integration of GaN on Si.