Spin Manipulation of Coupled Spin Structures in Semiconductor Macro-atoms

我们实现了用于单自旋操纵的大原子样品的制备方法，并发展了这些样品的测量技术。此外，我们还利用半导体纳米线结构制作了宏观原子，在自旋操控方面，我们采用了势垒宽度小于激子玻尔半径的GaAsAlGaAs量子阱结构。我们处理电极将电子注入到量子阱中，并用微型光致发光方法测量光致发光(PL)性质。在测量中，观察到了非常精细的发光峰，这些发光峰来自局域激子和局域带电激子。我们还找到了有效地产生带电激子和获得高极化激子的方法。这些结果是操纵单自旋的基本要求。我们从半导体纳米线中观察到非常尖锐的发光峰，包括线中的量子点结构。它们的性质与传统的In-Ga As量子点非常相似。我们还发现了这些NA…更多的无丝材料表现出高度各向同性的发光特性。这一特性源于纳米线样品的空间对称性。这些结果清楚地表明，纳米线制备技术可以用于制造宏原子结构。我们制备了各种纳米线，以获得具有良好光学性质的最佳宏原子。以前的纳米线大多使用的是砷化镓衬底。而在我们的样品中，硅的替代品被用来适应许多传统的电子器件。我们在GaP纳米线上生长了GaP纳米线和GaP纳米线。这两种线材都表现出良好的发光性能。此外，我们还利用金膜在硅表面的位置控制技术，实现了GaP纳米线的对准。我们还设计了一种用退火法产生具有薄GaP区的弯曲GaP结构的方法。在器件结构方面，制备了含InAs纳米线的场效应晶体管，并在室温下验证了其清晰的晶体管特性。最近，我们在室温下观测到了通信波长范围内的光致发光，这是其他研究小组尚未报道的。在不久的将来，我们将开发出操纵单个自旋和控制宏观原子中耦合自旋的具体方法。我们在这项研究中的成果是开拓宏观原子物理及其器件应用的新研究领域的重要里程碑。较少

We achieved the fabrication method of macro-atom samples for single spin manipulation and developed measurement techniques of these samples. Moreover, we created macro-atoms with semiconductor nano-wire structures.As for the spin manipulation, we used GaAs/AlGaAs quantum well structures whose well widths were smaller than the exciton Bohr radius. We processed electrodes to pump electrons into the quantum wells and measured photoluminescence(PL) properties with the micro-PL method. In the measurement, very fine PL peaks were observed, which originate from localized excitons as well as localized charged excitons. We also found the method to efficiently create charged excitons and obtain highly polarized excitons. These results are fundamental requirements to manipulate single spins.We observed very sharp PL peaks from semiconductor nano-wires including quantum dot structures in wires. Their propreties were very similar to those of conventional In GaAs quantum dots. We also found these na … More no-wires showed highly amsotropic PL properties. This proprety is due to the spatial symmetry of nano-wire samples. These results clearlyshow that the nano-wire fabrication technique can be applied to create macro-atom structures.We fabricated various nano-wires to obtain best macro-atoms having good optical properties. Most of previous nano-wires used GaAs substrates. Whereas for our samples, Si substiates were used to fit to many conventional electronic devices. We grew GaP nano-wires and GaAs nano-wires on GaP wires. Both these wires show good PL propreties. Moreover, we developed to align GaP nano-wires employing the position controrlling technique of gold paiticle on Si surface. We also devised a method creating bended GaP structures having thin GaAs regions with an annealing technique. As for device structure, field effect transistors with InAs nano-wires were fabricated and clear transistor characteristics were confirmed at room temperature. Recently, we observed PL emission in telecommunication wavelength regions at room tempreature, which have not yet been repoited from other research groups.In the near future, we will develop the concrete method to manipulate single spin and to control coupled spins in macro-atoms. Our result in this research term is the important milestones to proneer a new research field with macro-atoms physics and its device applications. Less