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Spin Manipulation of Coupled Spin Structures in Semiconductor Macro-atoms

半导体宏观原子中耦合自旋结构的自旋操纵

基本信息

批准号：
18310074
负责人：
GOTOH Hideki
金额：
$ 5.09万
依托单位：
NTT Basic Research Laboratories
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18310074/
关键词：
Nano-materials Semiconductor Physics Optical Properties

项目摘要

We achieved the fabrication method of macro-atom samples for single spin manipulation and developed measurement techniques of these samples. Moreover, we created macro-atoms with semiconductor nano-wire structures.As for the spin manipulation, we used GaAs/AlGaAs quantum well structures whose well widths were smaller than the exciton Bohr radius. We processed electrodes to pump electrons into the quantum wells and measured photoluminescence(PL) properties with the micro-PL method. In the measurement, very fine PL peaks were observed, which originate from localized excitons as well as localized charged excitons. We also found the method to efficiently create charged excitons and obtain highly polarized excitons. These results are fundamental requirements to manipulate single spins.We observed very sharp PL peaks from semiconductor nano-wires including quantum dot structures in wires. Their propreties were very similar to those of conventional In GaAs quantum dots. We also found these na … More no-wires showed highly amsotropic PL properties. This proprety is due to the spatial symmetry of nano-wire samples. These results clearlyshow that the nano-wire fabrication technique can be applied to create macro-atom structures.We fabricated various nano-wires to obtain best macro-atoms having good optical properties. Most of previous nano-wires used GaAs substrates. Whereas for our samples, Si substiates were used to fit to many conventional electronic devices. We grew GaP nano-wires and GaAs nano-wires on GaP wires. Both these wires show good PL propreties. Moreover, we developed to align GaP nano-wires employing the position controrlling technique of gold paiticle on Si surface. We also devised a method creating bended GaP structures having thin GaAs regions with an annealing technique. As for device structure, field effect transistors with InAs nano-wires were fabricated and clear transistor characteristics were confirmed at room temperature. Recently, we observed PL emission in telecommunication wavelength regions at room tempreature, which have not yet been repoited from other research groups.In the near future, we will develop the concrete method to manipulate single spin and to control coupled spins in macro-atoms. Our result in this research term is the important milestones to proneer a new research field with macro-atoms physics and its device applications. Less

我们实现了单自旋操纵宏观原子样品的制备方法，并开发了这些样品的测量技术。此外，我们创造了具有半导体纳米线结构的宏观原子。在自旋控制方面，我们采用了阱宽度小于激子玻尔半径的GaAs/AlGaAs量子阱结构。我们加工电极将电子泵入量子阱中，并用微致发光法测量光致发光（PL）特性。在测量中，观察到非常精细的PL峰，它们来自局域激子和局域带电激子。我们还发现了有效地产生带电激子和获得高极化激子的方法。这些结果是操纵单自旋的基本要求。我们从包含量子点结构的半导体纳米线中观察到非常尖锐的PL峰。它们的性质与传统的砷化镓量子点非常相似。我们还发现这些na…More no-wires表现出高度的无向异性PL特性。这种特性是由于纳米线样品的空间对称性。这些结果清楚地表明，纳米线制造技术可以用于制造宏观原子结构。我们制作了各种纳米线，以获得具有良好光学性能的最佳宏观原子。以往的纳米线大多采用砷化镓衬底。而对于我们的样品，硅基被用来适应许多传统的电子设备。我们在GaP线上生长GaP纳米线和GaAs纳米线。这两种电线都显示出良好的PL性能。此外，我们还开发了利用金粒子在硅表面的位置控制技术来对准GaP纳米线。我们还设计了一种使用退火技术创建具有薄GaAs区域的弯曲GaP结构的方法。在器件结构方面，采用InAs纳米线制备了场效应晶体管，并在室温下得到了清晰的晶体管特性。最近，我们在室温下观测到了电信波长区域的PL发射，这是其他研究小组尚未报道的。在不久的将来，我们将开发具体的方法来操纵单自旋和控制宏原子中的耦合自旋。这一研究成果是开辟宏观原子物理学及其器件应用研究新领域的重要里程碑。少