Development of dopant concentration measurement technique for next-generation devices

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For cross-sectional observations using p-n junction samples, the width of the depletion region decreased as the thickness decreases. This is due to the reduced diffusion length. But for regions thinner than about 0.1μm, the EBIC signal intensity starts to decrease quickly as the sample thickness decreases, and disappears. This is probably due to a presence of a surface depletion region. Cross-sectional samples on which Schottky contact was placed were also analyzed. It was shown that dopant distribution can be reproduced with accuracy better than 10nm from the EBIC current.