Development of dopant concentration measurement technique for next-generation devices

开发下一代器件的掺杂剂浓度测量技术

• 批准号: 20560296
• 负责人: TANAKA Shigeyasu
• 金额: $ 2.91万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560296/
• 关键词: 作成・評価技術; 電子顕微鏡; 半導体; 電子線誘起電流; p-n接合; PN接合

For cross-sectional observations using p-n junction samples, the width of the depletion region decreased as the thickness decreases. This is due to the reduced diffusion length. But for regions thinner than about 0.1μm, the EBIC signal intensity starts to decrease quickly as the sample thickness decreases, and disappears. This is probably due to a presence of a surface depletion region. Cross-sectional samples on which Schottky contact was placed were also analyzed. It was shown that dopant distribution can be reproduced with accuracy better than 10nm from the EBIC current.

对于使用pn结样品的横截面观察，耗尽区的宽度随着厚度的减小而减小。这是由于扩散长度的减少。而对于厚度小于0.1μm的区域，随着样品厚度的减小，EBIC信号强度开始迅速下降，并逐渐消失。这可能是由于存在一个表面枯竭区。还分析了放置肖特基接触的横截面样品。结果表明，在EBIC电流下可以精确地再现掺杂剂分布，精度优于10nm。

项目成果

STEM-EBIC法によるシリコンpn接合の観察

使用 STEM-EBIC 方法观察硅 p-n 结

• 发表时间: 2010
• 作者: 丹羽辰嗣;田中成泰;丹司敬義
• 通讯作者: 丹司敬義

Determination of Piezoelectric Fields across InGaN/GaN Quantum Wells by Mwans of Electron Holography

通过电子全息术 Mwan 确定 InGaN/GaN 量子阱中的压电场

• 发表时间: 2009
• 作者: S.Tanaka;M.Deguchi;T.Tanji
• 通讯作者: T.Tanji

Characterization of a-Si/c-Si Junctions by Electron Holography

通过电子全息术表征 a-Si/c-Si 结

• 发表时间: 2008
• 作者: S.Yamaguchi;J.Mizusaki;T.Maruyama;H.Yugami;M. Deguchi
• 通讯作者: M. Deguchi

Application of Electron-Beam-Induced-Current Technique in Scanning Transmission Electron Microscope to Observation of Si p-n Junction

扫描透射电子显微镜电子束感应电流技术在Si p-n结观察中的应用

• 发表时间: 2010
• 作者: S.Tanaka;T.Niwa;T.Tanji
• 通讯作者: T.Tanji

EBIC imaging using scanning transmission electron microscopy : experiment and analysis

使用扫描透射电子显微镜进行 EBIC 成像：实验与分析

• 发表时间: 2008
• 期刊: Journal of Materials Science-Materials in Electronics 19
• 作者: S.Tanaka;H.Tanaka;T.Kawasaki;M.Ichihashi;T.Tanji;K.Arafune;Y.Ohshita;M.Yamaguchi
• 通讯作者: M.Yamaguchi