Development of stress measurement method using Raman spectroscopy and biaxial tensile testing for micro/nanoscale structures

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We have designed and developed bi-axial tensile tester for film specimens, and obtained Raman spectra of micro/nanoscale single crystal silicon structures under uniaxial and biaxial stress states. As the results, Raman shift map around the Si structure under biaxial stress state was different from that under uniaxial stress state. By comparing Raman spectral parameters with stress components and its magnitude, we have confirmed that the parameters were correlated with stress components and magnitude. Integration of biaxial tensile testing with Raman spectroscopy enables us to precisely evaluate stress distribution of single crystal silicon structures in MEMS.