Development of stress measurement method using Raman spectroscopy and biaxial tensile testing for micro/nanoscale structures

使用拉曼光谱和双轴拉伸测试微/纳米结构的应力测量方法的开发

• 批准号: 20760075
• 负责人: NAMAZU Takahiro
• 金额: $ 2.83万
• 依托单位: University of Hyogo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20760075/
• 关键词: 応力; 引張試験; ラマン分光; 単結晶Si; 薄膜引張試験; 二軸引張試験; 応力・ひずみ; マイクロマシン; 電子デバイス; 非接触・非破壊計測; 検量線

We have designed and developed bi-axial tensile tester for film specimens, and obtained Raman spectra of micro/nanoscale single crystal silicon structures under uniaxial and biaxial stress states. As the results, Raman shift map around the Si structure under biaxial stress state was different from that under uniaxial stress state. By comparing Raman spectral parameters with stress components and its magnitude, we have confirmed that the parameters were correlated with stress components and magnitude. Integration of biaxial tensile testing with Raman spectroscopy enables us to precisely evaluate stress distribution of single crystal silicon structures in MEMS.

设计并研制了薄膜样品双轴拉伸测试仪，获得了微/纳米单晶硅结构在单轴和双轴应力状态下的拉曼光谱。结果表明，双轴应力状态下硅结构周围的拉曼位移图与单轴应力状态下的不同。通过比较拉曼光谱参数与应力分量及其大小的关系，证实了拉曼光谱参数与应力分量及其大小的相关性。双轴拉伸测试与拉曼光谱的集成使我们能够精确地评估MEMS中单晶硅结构的应力分布。

项目成果

Advanced Micro & Nanosystems, Reliability of MEMS

先进微

• 发表时间: 2008
• 作者: M. Komatsubara;Y. Nagai;T. N amazu;N. Naka;S. Kashiwagi;K. Ohtsuki;and S. Inoue;Hiroyuki Waki;T. Namazu
• 通讯作者: T. Namazu

Raman Spectrum Curve Fitting for Estimating Surface Stress Distribution in Single-Crystal Silicon Microstructure

用于估计单晶硅微结构表面应力分布的拉曼光谱曲线拟合

• 发表时间: 2009
• 期刊: Japanese Journal of Applied Physics Vol.48
• 作者: M. Komatsubara;T. Namazu;Y. Nagai;S. Inoue;N. Naka;S. Kashiwagi;K. Ohtsuki
• 通讯作者: K. Ohtsuki

Raman Spectroscopy under Tensile Loading for Evaluating Surface Stress on Single-Crystalline Silicon Microstructures

拉伸载荷下的拉曼光谱评估单晶硅微结构的表面应力

• 发表时间: 2008
• 作者: M. Komatsubara;Y. Nagai;T. N amazu;N. Naka;S. Kashiwagi;K. Ohtsuki;and S. Inoue
• 通讯作者: and S. Inoue

Fatigue life evaluation for single‐ and poly‐crystalline silicon films by pulsating‐tension cyclic loading test

脉动拉伸循环加载试验评价单晶硅薄膜和多晶硅薄膜的疲劳寿命

• DOI: 10.1002/sia.2820
• 发表时间: 2008
• 期刊: Surface and Interface Analysis
• 影响因子: 1.7
• 作者: Y. Nagai;T. Namazu;S. Inoue
• 通讯作者: S. Inoue

Fatigue Life Prediction Criterion for Micro-Nanoscale Single-Crystal Silicon Structures

• DOI: 10.1109/jmems.2008.2008583
• 发表时间: 2009-02-01
• 期刊: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
• 影响因子: 2.7
• 作者: Namazu, Takahiro;Isono, Yoshitada
• 通讯作者: Isono, Yoshitada