Formation of quantum nano-wire by polarization interaction between ferroelectric and polar semiconductor

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The aim of this study is the formation of quantum nano-wires not physically but electrically. It can be expected that the quantum nano-wire is formed by nano-size ferroelectric domain formed by scanning probe microscopy at an interface between a ferroelectric and a polar semiconductor with almost same spontaneous polarizations. When a micro probe is scanned with applying voltage on the channel region of a fabricated sample, modulation of drain current corresponding to the position of the probe was observed, which indicates the possibility of the realization of the device proposing in this study.