Development of particle detector using a new generation compound

利用氮化镓（GaN）和氧化锌（ZnO）等新一代化合物半导体，研制了一种辐射探测器。我们用这些材料制作了二极管，并研究了它们的电学性能和探测入射粒子的性能。因此，我们成功地开发了具有高灵敏度的传感器。-射线和x射线。此外，我们用高能质子束照射二极管，并研究了对其电学性能的影响。我们发现，在高达10^<15> p/cm^2的影响下，二极管的电学性质没有显著变化。本研究的结果表明了这些材料的辐射硬度。

We developed a radiation detector using new generation compound semiconductor such as gallium nitride (GaN) and zinc oxide (ZnO). We fabricated the diodes with these materials and investigated the electrical properties and the performance in detection of incident particles. As a result, we succeeded in developing sensors with a high sensitivity for .-ray and X-ray. In addition, we irradiated the diodes with high energy proton beam, and investigated the effects on their electrical properties. We found that the electrical properties of the diodes did not change significantly under fluences up to 10^<15> p/cm^2. The result obtained in this study suggests the radiation hardness of these materials.