Characterization of crystal defects in organic semiconductors for progress in device performance

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The characterization of structures and device properties was studied on organic semiconducting thin films for the purpose of controlling the crystal growth and of elucidating the relationship between crystal defects and transport properties in organic thin-film transistors. Two-dimensional grazing incidence X-ray diffraction (2D-GIXD) was successfully obtained for the vapor deposited pentacene thin-films and the solution-grown TIPS-pentane films. As to the thin film growth of pentacene, thickness-dependent structural change was clearly observed in a real-time observation, and the structural change is significantly affected by exposing to air. On the other hand, large single crystals of TIPS-pentane were grown from solution phase under high magnetic filed. The 2D-GIXD patterns of solution-grown TIPS-pentane were prudently analyzed, and hole mobility in a thin film transistor based was measured and discussed.